• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.19-19
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• 2007

Recently, we have developed p-i-n hydrogenated amorphous silicon (a-Si:H) single junction (SJ) thin film solar cells with RF (13,56MHz) plasma enhanced chemical vapor deposition (PECVD) systems, and also successfully fabricated the mini-modules (>300$cm^2$), using laser scribing technique to form an integrated series connection, The efficiency of a mini-module was 7.4% (Area=305$cm^2$, $I_{SC}$=0.25A, $V_{OC}$=14.74V, FF=62%).

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.151-152
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• 2012

라만(Raman) 분광법은 실리콘의 결정화도를 분석하는데 가장 유용하게 쓰이는 기법이다. 본 논문에서는 상압 플라즈마 화학기상증착법 (atmospheric pressure plasma-enhanced chemical vapor deposition, AP-PECVD)에 의해 형성된 실리콘 박막의 결정화도를 라만 분광법에 의해 분석하였다. 라만 분석 시, 조사하는 레이져의 파장에 따라서 실리콘 박막 내로의 침투깊이가 결정된다. 또한 레이져의 파워가 임계점을 넘게 되면, 레이져에 의한 실리콘의 결정화가 진행되는 것을 확인하였다.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.49-53
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• 1999

We have studied the field emission characteristics of diamond-like-carbon (DLC) films deposited by a layer-by-layer technique using plasma enhanced chemical vapor deposition, in which the deposition of a thin layer of DLC and a CH4 plasma exposure on its surface were carried out alternatively. The hydrogen-free DLC can be deposited by CH4 plasma exposure for 140 sec on a 5 nm DLC layer. N2 gas-phase doping in the CH4 plasma was also carried out to reduce the work function of the DLC. The optimum [N2]/[CH4] flow rate ratio was found to be 9% for the efficient electron emission, at which the onset-field was 7.2 V/$\mu\textrm{m}$. It was found that the hydrogen-free DLC has a stable electron emitting property.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.9-17
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• 1996

Plasma enhanced chemical vapor deposition (PECVD) allows low temperature processing and so it is widely used, but it causes instability of devices due to serious amount of impurities within the film. In this paper, electrical and chemical characteristics of the PECVD oxynitride film formed by different N$_{2}$O to N$_{2}$O+NH$_{3}$ gas ratio is studied. It has been found that hydrogen concentration of PECVD oxynitride film was decreased from 4.25*10$^{22}$ [cm$^{-2}$ ] to 1.18*10$^{21}$ [cm$^{-2}$ ] according to the increase of N$_{2}$O gas. It was also found that PECVD oxynitride films have low trap density in the oxide and interface in comparison with PECVD nitroxide films, and has higher refractive index and capacitance than oxide films. In particular, oxynitride film formed in gas ratio of N$_{2}$O/(N$_{2}$O+NH$_{3}$)= 0.88 shows increased capacitance and decreased leakage current due to small portion of hydrogen in oxide and the accumulation of nitrogen about 4[atm.%] at the interface.

• Journal of the Semiconductor & Display Technology
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• v.13 no.4
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• pp.21-25
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• 2014

The silicon nitride ($SiN_x$) film for surface passivation and anti-reflection coating of crystalline silicon solar cell is very important and it is generally deposited by plasma enhanced chemical vapor deposition (PECVD). PECVD can be divided into low and high frequency method. In this paper, the $SiN_x$ film deposited by low and high frequency PECVD method was studied. First, to optimize the $SiN_x$ film deposited by low frequency PECVD method, the refractive index was measured by varying the process conditions like $SiH_4$, $NH_3$, $N_2$ gas rate, and RF power. When $SiH_4$ gas rate was increased and $NH_3$ gas rate was decreased, the refractive index was increased. The refractive index was also increased with RF power decline. Second, to compare the characteristics of the low and high frequency PECVD $SiN_x$ film, the refractive index was measured by varying $NH_3/SiH_4$ gas ratio and RF power and the minority carrier lifetime of before and after high temperature treatment process was also measured. The refractive index of both low and high frequency PECVD $SiN_x$ film was decreased with increase in $NH_3/SiH_4$ gas ratio and RF power. After high temperature treatment process, the minority carrier lifetime of both low and high frequency PECVD $SiN_x$ film was increased and increased degree was similar. The minority carrier lifetime of low frequency PECVD $SiN_x$ was increased from $11.03{\mu}m$ to $28.24{\mu}m$ and that of high frequency PECVD $SiN_x$ was increased from $11.60{\mu}m$ to $27.10{\mu}m$.

• Journal of Sensor Science and Technology
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• v.13 no.3
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• pp.182-187
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• 2004

The fluorinated amorphous carbon thin films (a-C:F) were deposited by PECVD(plasma enhanced chemical vapor deposition). The precursors were $C_{4}F_{8}$ which had a similar ratio of target film's carbon to fluorine ratio, and $Si_{2}H_{6}$/He for capturing excessive fluorine ion. We varied deposition condition of temperature and working pressure to survey the effect of each changes. We measured dielectric constant, composition, and etc. At low temperature the film adhesion to substrate was very poor although the growth rate was very high, the growth rate was very low at high temperature. The EDS(energy dispersive spectroscopy) result showed carbon and fluorine peak for films and Si peak for substrate. There was no oxygen peak.

• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.35-39
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• 2003

Using RF plasma enhanced chemical vapor deposition, amorphous carbon films were grown in pure methane plasma. Field electron emission of these films were examined at a function of deposition temperature. It was found that the electron emission current of the sample prepared at deposition temperature above $600^{\circ}C$ was considerably improved. The film grown at deposition temperature of $800^{\circ}C$ had the best threshold field of 8 V/$\mu\textrm{m}$ in this experiment. According to the results of Raman spectroscopy. growth of graphite crystallites was promoted with higher deposition temperatures. Moreover the surface morphology was abruptly changed at deposition temperature above $600^{\circ}C$. We discuss the field electron emission characteristics of amorphous carbon films with regard to the structural feature and surface morphology.

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.594-597
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• 2002

Silicon Oxynitride(SiON) thick films on p-type silicon(100) wafers have obtained by using plasma-enhanced chemical vapor deposition from SiH$_4$ , N$_2$O and N$_2$. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4620 to 1.5312. A high deposition power of 180 W leads to deposition rates of up to 5.92${\mu}$m/h. The influence of the deposition condition on the chemical composition was investigated using X-ray photoelectron spectroscopy. After deposition of the SiON thick films, the films were annealed at 1050$^{\circ}C$ in a nitrogen atmosphere for 2 h to remove absorption band near 1.5${\mu}$m.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.41-43
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• 2004

Plasma polymerized para-xylene ($PP_PX$) deposited by plasma-enhanced chemical vapor deposition (PECVD) was used as the barrier layer on the polyethylene terephthalate (PET) substrate to improve lifetime of the flexible organic light-emitting diodes (FOLEDs). The $PP_PX$ barrier layer deposited on top of the PET substrate with plasma power of 30 W at deposition pressure of 0.2 torr showed transmittance spectra good enough to be applied in FOLED on PET substrates. FOLEDs with the $PP_PX$ barrier layer (barrier-FOLEDs) showed similar I-V and B-V characteristics to FOLEDs without the $PP_PX$ layer (control-FOLEDs). The lifetime of barrier-FOLED was two times longer than that of the control-FOLED. With $PP_PX$ passivation layers, lifetimes of both control and barrier-FOLEDs were improved by more than 4 times. These results show that PECVD deposited $PP_PX$ layers can be used as barrier layers for FOLEDs on plastic substrates as well as passivation layers for general OLEDs.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.79-85
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• 1997

Fe$_2$O$_3$ thin films were prepared on $Al_2$O$_3$ substrate by PECVD(Plasma-Enhanced Chemical Vapor Deposition) process. The phase transformation of iron oxide film was determined as the substrate temperature and reduction-oxidation process. $\alpha$-Fe$_2$O$_3$ was stable in deposition temperature ranges of 80~15$0^{\circ}C$. Fe$_3$O$_4$ phase was obtained by the reduction process of $\alpha$-Fe$_2$O$_3$ phase in H$_2$ ambient. Fe$_3$O$_4$ phase was transformed into a ${\gamma}$-Fe$_2$O$_3$ thin film under controlled oxidation conditions at 280~30$0^{\circ}C$.