• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1183-1185
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• 1993

The plasma polymerized thin film of MMA+Sty was prepared using a capacitively coupled gas-flow-type reactor. This thin films were also delincated by the electron-beam apparatus with an acceleration voltage 30KV, and the pattern in the resist was developed with the gas-flow-type reactor using an argon as an etchant. The effect of discharge power on groth rate and etching rate of the thin film were studied. The molacular structure of the resist was investigated by ESCA and FT-IR.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.278-280
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• 1994

The purpose of this paper is to describe an application of plasma polymerized thin film as an electron beam resist. Plasma polymerized thin film was prepared using an interelectrod inductively coupled gas-flow-type reactor. Styrene was chosen as the monomer to be used. This thin films were also delineated by the electron-beam apparatus and the pattern in the resist was developed with RIE and plasma polymerized apparatus. The effect of charge of pressure on growth rate and etching rate of the thin films were studied. The molecular structure of thin film was investigated by FT-IR and then was discussed in relation to its quality as a resist.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.12
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• pp.48-53
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• 2011

Polymer thin films were prepared by capacitively coupled plasma polymerization process for application of gate insulator. The polymer thin films revealed to form polymer layers with original properties of the monomer. Among the plasma polymer thin films, the styrene polymer having large number of phenyl sites revealed higher dielectric constant of k=3.7 than that of conventional polymer. The plasma polymerized styrene thin film revealed no hysteresis characteristics and low leakage current density of $1{\times}10^{-8}[Acm^{-2}]$ at field strength of $1[MVcm^{-1}]$, which measured by I-V and C-V measurements using MIM and MIS devices.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.1
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• pp.29-35
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• 1987

TPolystyrene thin films are prepared by glow discharge of sytrene monomer vapor th establish the growth mechanism of organic thin films by the plasma polymerization. As the discharge parameters, discharge current(5mA-20mA), frequency (10kHz-50kHz, 13.56MHz), gaspressure (0.2torr-1.5torr), and discharge time(2min-12min)are adopted. Plasma-polymerized filmsof styrene vapor are identified as polystyrene by IR spectra. The thickness of plasma-polymerized films increases with gas pressure, frequency and discharge current in the region of the low frequency and below the allowed gas pressure where the polymerization occurs. It is suggested that the growth mechanism can be explained by ionic reaction in d.c. and low frequency region, and by radical reaction in high frequency region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.108-111
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• 1988

In this study, the electrical conduction properties of plasma-polymerized (MMA+Styrene) thin film have been investigated. The measurements of transient conduction currents were carried out in the temperature of 50 to 150$^{\circ}C$ at electric field of 10$^4$to 10$\^$6/V/cm. The electric field-current density characteristic curves were divided into three regions-ohmic region, child region, sudden-increasing region. It is shown that the conduction mechanism of this thin film is in good agreement with SCLC(space charge limited current) model by applying the high field conduction theories.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1268-1270
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• 1994

Fine lithographic technology in a submicron design regime is necessary for the fabrication of VLSI circuits. In such lithography, fine pattern delineation is performed by electron beam, ion beam and X-ray lithography instead of photolithography. Therefore, the new resist materials and development method have been required. So, we are investigating another positive E-beam resists which have high sensitivity and dry etching resistance, Plasma co-polymerized resist was prepared using an interelectrode gas-flow-type reacter. Methymethacrylate, tetramethyltin and styrene were chosen as the monomer to be used. The delineated pattern in the resist was developed with gas-flow-type reactor using an argon and 02 as etching gas. We studied about the effects of discharge power and mixing rate of the co-polymerized thin :film. The molecular structure of thin film was investigated by ESCA and IR, and then was discussed in relation to its quality as a resist.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.183-186
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• 1991

In order to prepare the functional organic optic meterials, the capacitive coupled gas flow type plasma polymerization apparatus was designed and manufactured. Styrene and para-Xylene monomer were adopt as organic materisl. Optical constant, refrative index, extinction coefficient of organic thin films by the gas flow type plasma polymerization appratus were determined by envelope method using spectrophotometry. The refractive index of plasma polymerized thin films was decreased in accordance to increase of wave length and discharge time. The extinction coefficient was very small compared with refractive index. From the experimental result of optical constant and film thickness, it was considered that the films which had required optical properties and thickness can be prepared by control of polymerization condition.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1400-1402
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• 1994

Plasma polymerized thin films was prepared using an interelectrod inductively coupled gas-flow-type reactor. Styrene was chosen as the monomer to be used. This thin films were also delineated by the electron-beam apparatus with an acceleration voltage 30kV, and the pattern in the resist was developed with RIE 80 with argon gas mixture ratio, pressure and RF power. The molecular structure of thin films was investigated by GPC and FT-IR and then was discussed in relation to its quality as a resist. In the case of plasma polymerization, thickness of resist could be controlled by discharge duration and power. Also etch rate is increased as to growing pressure with RIE 80.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.138-140
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• 1994

Plasma polymerized thin film was prepared using an interelectrod inductively coupled gas-flow-type reactor. Styrene was chosen as the monomer to be used. This thin films were also delineated by the electron-beam apparatus with an acceleration voltage 30kV, and the pattern in the resist was developed with RIE 80 with argon gas mixture ratio, pressure and RF power. The effect of charge of discharge power on growth rate and etching rate of the thin films were studied. The molecular structure of thin films were investigated by FIR and then was discussed in relation to its quality as a resist. In the case of Plasma polymerization, thickness of resist could be controlled by discharge duration and power. Also etch rate is increased as to growing argon gas and RF power with RIE 80.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.410-414
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• 1998

The dependence of substrate material and electrode position were studied by radiation analysis of Ar discharge, and electron beam radiation was applied to confirm the crosslinked structure of the film. Comparing the conductor substrate with the insulator substrate, the former had lager peak density of radiation spectrum than latter. From the result of peak density of metastable state and ion, it was confirmed that the peak density of ion was falling to the down limit with increasing the distance of electrode by analyzing the radiation spectrum of polymerized films. When the polymerized styrene films was exposed to electron beam, it was possible to form a pattern with the insulator substrate.