• 한국진공학회지
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• 제16권1호
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• pp.65-73
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• 2007

마이크로유체 채널 내에서 표면 성질과 기능성 분자들의 공간적인 위치를 제어하는 것은 진단소자, 마이크로 반응기, 또는 세포와 마이크로 유체역학의 기본적인 연구를 일해 매우 중요하다. 이 논문에서는 소프트 리소그라피 방법을 이용하여 채널 안에 패턴된 구조물을 포함하는 안정적인 마이크로 채널을 제작하는 방법을 소개하려 한다. 먼저 패턴된 영역을 폴리디메틸실록세인(PDMS) 몰드의 치수와 제작 과정을 적당히 조절함으로써 산소 플라즈마로부터 보호한다. 마이크로 구조물은 대표적인 생물오손(biofouling) 억제 물질인 폴리에틸렌 글리콜(PEG)계 공중합 고분자 혹은 다당류인 히알루산(HA)을 패턴하여 얻었으며 이러한 패턴을 이용하여 피브로넥틴(FN), 소의 혈장 알부민(BSA) 등의 단백질과 동물 세포의 어레이를 제작하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1632-1635
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• 2007

We developed a novel growth method of CNTs on metal substrate for device applications, deposited by a triode direct current plasma enhanced chemical vapor deposition (dc-PECVD). With resist-assisted patterning (RAP) method, we had grown CNTs on metal substrate, which were strongly bonded with metal substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.910-912
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• 2006

Barrier ribs in plasma display panels (PDPs) function to maintain the discharge space between the glass plates as well as to prevent optical cross-talking. The barrier ribs currently employed are typically $300{\mu}m$ pitch, $110{\sim}120{\mu}m$ in height, with upper and lower widths of $50{\mu}m$ and $80{\mu}m$, respectively. It has been reported that barrier ribs can be fabricated by screen-printing, sand blasting, etching and photolithographic processes. In this study, photosensitive barrier rib pastes were formulated and systematically evaluated in terms of photolithographic process variables such as printing, drying, UV exposure, development and sintering. It was found that the use of UV absorbent, polymerization inhibitor and surfactant were very effective in controlling the width uniformity of barrier ribs in the photolithographic method of barrier rib patterning.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.823-827
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• 2005

Barrier ribs in the plasma display panel (PDP) function to maintain the discharge space between the glass plates as well as to prevent optical crosstalk. Patterning of barrier ribs is one of unique processes for making PDP. Barrier ribs could be formed by screen-printing, sand blasting, etching, and photolithographic process. In this work photosensitive barrier rib pastes were prepared by incorporating binder polymer, solvent, functional monomers photoinitiator, and barrier rib powder of which surface was treated with fumed silica particles. Studies on the function of materials for the barrier rib paste were undertaken. After optimization of paste formulation and photolithographic process, it was applied to the photosensitive barrier rib green sheet and was found that photolithographic patterning of barrier ribs could be formed with good resolution up to $110{\mu}m$ height and $60{\mu}m$ width after sintering.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.248.1-248.1
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• 2014

We present results from an experimental study of conductivity change of poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) film according to the surface structuring. We demonstrate that the patterned structure was enhanced with approximately five times conductivity in comparison with non structure of PEDOT:PSS film. In order to patterning, we have fabricated polystyrene (PS) colloidal monolayer as a template with sphere diameter of 780nm and 1.8um. Structure has honeycomb shape and it provide shorter path way to flowing of electron. Pattern size was controlled by PS diameter and varied by Transformer Coupled Plasma (TCP) etching system. Conductivity was converted from sheet resistance which measured by 4-point prove. Film thickness was derived using Field Emission Scanning Electron Microscopy (FE-SEM) images.

• 마이크로전자및패키징학회지
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• 제7권2호
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• pp.1-6
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• 2000

X-선 노광용 마스크의 재료로서 SiC와 Ta박막을 각각 ECR플라즈마 CVD, 스퍼터링 장비를 이용하여 증착한 뒤 잔류응력, 미세구조, 표면상태, 그리고 화학적 결합상태 등을 조사하였고, ECR etching system을 이용하여 Ta박막 미세 식각 특성을 연구하였다. SiC박막은 $N_2$분위기에서 RTA를 통하여 X-선 투과막 물질로서 필요한 적절한 인장응력을 변화 시킬 수 있었고, 공정 압력을 조절하여 증착한 Ta박막은 높은 밀도와 우수한 표면 평활도를 가지고 시간과 온도에 따른 응력의 안정성이 좋은 X-선 흡수체를 증착할 수 있었다. 또한 Cl 플라즈마는 흡수체 물질 Ta에 대해 좋은 식각특성을 보였고, two-step 식각을 통해 microloading effect를 억제함으로써 0.2 $\mu\textrm{m}$이하의 미세패턴을 식각해 낼 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.233-233
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• 2015

We report on a simple method for inducing physical and chemical property-gradient on nanoimprinted patterns by intensity-regulated plasma treatment under caved sample stage. As for the size gradient, a line pattern having a linewidth of 294.9 nm was etched to have gradually varying width from 277.4 nm to 147.9 nm. Modified pattern was proven to be adaptable to replica stamp for reversal patterning. To investigate the wettability gradient, imprinted nanopatterns were coated with fluoroalkylsilane to increase the hydrophobicity, and the surface was modified to have gradually varying wettability from hydrophobic to hydrophilic (contact angle was ${\sim}160^{\circ}$ to ${\sim}5^{\circ}$ on a single chip). This method is expected to be applicable to the selective adsorption of biological entities and hydrodynamic manipulation of liquid droplets for the pumpless microfluidics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.102-102
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• 2008

Sapphire (${\alpha}-Al_2O_3$) has been used as the substrate of opto-electronic device because of characteristics of thermal stability, comparatively low cost, large diameter, optical transparency and chemical compatibility. However, there is difficulty in the etching and patterning due to the physical stability of sapphire and the selectivity with sapphire and mask materials [1,2]. Therefore, sapphire has been studied on the various fields and need to be studied, continuously. In this study, the etching properties of sapphire substrate were investigated with various $CH_4$/Ar gas combination, radio frequency (RF) power, DC-bias voltage and process pressure. The characteristics of the plasma were estimated for mechanism using optical emission spectroscopy (OES). The chemical compounds on the surface of sapphire substrate were investigated using energy dispersive X-ray (EDX). The chemical reaction on the surface of the etched sapphire substrate was observed by X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to investigate the vertical and slope profiles.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.371.2-371.2
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• 2016

Graphene electronics is one of the promising technologies for the next generation electronic devices due to the outstanding properties such as conductivity, high carrier mobility, mechanical, and optical properties along with extended applications using 2 dimensional heterostructures. However, large contact resistance between metal and graphene is one of the major obstacles for commercial application of graphene electronics. In order to achieve low contact resistance, numerous researches have been conducted such as gentle plasma treatment, ultraviolet ozone (UVO) treatment, annealing treatment, and one-dimensional graphene edge contact. In this report, we suggest a fabrication method of one-dimensional graphene metal edge contact without using graphene exfoliation. Graphene is grown on Cu foil by low pressure chemical vapor deposition. Then, the graphene is transferred on $SiO_2/Si$ wafer. The patterning of graphene channel and metal electrode is done by photolithography. $O_2$ plasma is applied to etch out the exposed graphene and then Ti/Au is deposited. As a result, the one-dimensional edge contact geometry is built between metal and graphene. The contact resistance of the fabricated one-dimensional metal-graphene edge contact is compared with the contact resistance of vertically stacked conventional metal-graphene contact.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.369-369
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• 2012

The present work deals with selective deposition of copper on fluoropolymers patterned silicon (111) surfaces. The pattern of fluoropolymer was fabricated by nanoimprint lithography (NIL) and plasma reactive ion etching (RIE) was used to remove the residuals layers. Copper was electrochemically deposited in bare Si regions which were not covered with fluoropolymers. The patterns of fluoropolymers and copper have been investigated by scanning electron microscopy (SEM). In this work, we used two deposition methods. One is galvanic displacement method and another is electrodeposition. Selective deposition works in both cases and it shows applicability to other materials. By optimization of the deposition conditions can be achieved therefore this process represents a simple approach for a direct high resolution patterning of silicon surfaces.