• 제목/요약/키워드: plasma measurement

검색결과 780건 처리시간 0.027초

펄스형 방전플라스마 장치에서 반경방향 Current Sheath의 속력 (Radial Speed of Current Sheath in Pulsed Discharge Plasma Device)

  • 최운상;장준규
    • 한국안광학회지
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    • 제13권3호
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    • pp.57-60
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    • 2008
  • 목적: 펄스형 방전플라스마 포커스 장치에서 반경방향 플라스마 current sheath 의 속력을 측정하였다. 방법: 측정에는 시간분해 분광분석법과 로고프스키 코일이 사용되었다. 결과: 15 kV의 방전전압과 수십 torr의 He과 Ar의 기체기압에서 $10^5$ cm/s의 속력이 측정되었으며, 기체기압이 증가할수록 current sheath의 속력은 감소되었다. 결론: 최적조건인 수 torr의 기압에서는 $10^7$ cm/s의 속력이 나올 것으로 예상된다.

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Neutron irradiation impact on structural and electrical properties of polycrystalline Al2O3

  • Sunil Kumar;Sejal Shah;S. Vala;M. Abhangi;A. Chakraborty
    • Nuclear Engineering and Technology
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    • 제56권2호
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    • pp.402-409
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    • 2024
  • High energy neutron irradiations impact on structural and electrical properties of alumina are studied with particular emphasis on real time in-situ radiation induced conductivity measurement in low flux region. Polycrystalline Al2O3 samples are subjected to high energy neutrons produced from D-T neutron generator and Am-Be neutron source. 14 MeV neutrons from D-T generator are chosen to study the role of fast neutron irradiation in the structural modification of samples. Real time in-situ electrical measurement is performed to investigate the change in insulation resistance of Al2O3 due to radiation induced conductivity at low flux regime. During neutron irradiation, a significant transient decrease in insulation resistance is observed which recovers relative higher value just after neutron exposure is switched off. XRD results of 14 MeV neutron irradiated samples suggest annealing effect. Impact of relatively low energy neutrons on the structural properties is also studied using Am-Be neutrons. In this case, clustering is observed on the sample surface after prolonged neutron exposure. The structural characterizations of pristine and irradiated Al2O3 samples are performed using XRD, SEM, and EDX. The results from these characterizations are analysed and interpreted in the manuscript.

The Study on Characteristics of N-Doped Ethylcyclohexane Plasma-Polymer Thin Films

  • 서현진;조상진;이진우;전소현;부진효
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.540-540
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    • 2013
  • In this studying, we investigated the basic properties of N-doped plasma polymer. The N-doped ethylcyclohexane plasma polymer thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Ethylcyclohexenewas used as organic precursor (carbon source) with hydrogen gas as the precursor bubbler gas. Additionally, ammonia gas [NH3] was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, FE-SEM, and water contact angle measurement. The ellipsometry results showed the refractive index change of the N-doped ethylcyclohexene plasma polymer film. The FT-IR spectrashowed that the N-doped ethylcyclohexene plasma polymer films were completely fragmented and polymerized from ethylcyclohexane.

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라인형 플라즈마 소스를 이용한 ALD 공정 연구 (Study of ALD Process using the Line Type Plasma Source)

  • 권기청;조태훈;최진우;송세영;설제윤;이준신
    • 반도체디스플레이기술학회지
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    • 제15권4호
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    • pp.33-35
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    • 2016
  • In this study, a new plasma source was used in the ALD process. Line type plasma sources were analyzed by electric and magnetic field simulation. And the results were compared with plasma density and electron temperature measurement results. As a result, the results of the computer simulation and the diagnosis results of plasma density and electron temperature showed similar tendency. At this time, the plasma uniformity is 95.6 %. $Al_2O_3$ thin film was coated on 6 inch Si-wafer, using this plasma source. The uniformity of the thin film was more than 98% and the thin film growth rate was 0.13 nm/cycle.

PDM Tool을 이용한 plasma nonuniformity 측정에 관한 연구 (A Study for plasma nonuniformity measurement by PDM Tool)

  • 김상용;서용진;이우선;정헌상;김창일;장의구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.75-78
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    • 2000
  • This paper is estimated to enhance yield improvement and device reliability using PDM(plasma damage monitoring) system capable of in-suit detection about plasma nonuniformity. PDM Tool is the non-contact method of wafer and surface potential electrode(kelvin probe). Its tool measures Vox(oxide barrier) with charge created by plasma. It's possible to inspect the wafer damage generated by plasma charge and analysis of in-situ monitoring data. we obtained the good data which is continuously prevented from plasma damage using its tool for 10weeks. This tool is contributed to preventive steps contemporaneously inspecting the difference of inter-chamber.

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