• 반도체디스플레이기술학회지
• /
• 제17권2호
• /
• pp.16-19
• /
• 2018

The development speed of semiconductor and display device manufacturing technology is growing faster than the development speed of process equipment. So, there is a growing need for process diagnostic technology that can measure process conditions in real time and directly. In this study, a plasma diagnosis was carried out using impedance variation due to the plasma discharge. Variation of the measurement impedance appears as a voltage change at the reference impedance, and the plasma density is calculated using this. The above experiment was conducted by integrating the plasma diagnosis system and the linear atmospheric pressure DBD plasma source. It was confirmed that plasma density varies depending on various parameters (gas flow rate, $Ar/O_2$ mixture ratio, Input power).

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.185.1-185.1
• /
• 2016

Cutoff probe, diagnostics instrument for plasma density, have been received an extensive attention due to simple, robust and lowest assumption. Although the cutoff probe has a long history, physical model is limited in low density plasma. For that reason, we propose a novel transmission line model of cutoff probe for precise measurement of high density plasma. In addition simplified circuit model can be obtained from transmission line model. It can explain simply physics of cutoff probe in high density plasma.

• Fibers and Polymers
• /
• 제4권4호
• /
• pp.145-150
• /
• 2003

Polypropylene nonwoven fabrics were exposed to He/$O_2$ atmospheric pressure glow discharge plasma. Surface chemical analysis and contact angle measurement revealed the surface oxidation by formation of new functional groups after plasma treatment. Weight loss (%) measurement and scanning electron microscopy analysis showed a significant plasma etching effect. It was investigated in low-stress mechanical properties of the fabrics using Kawabata Evaluation System (KES-FB). The surface morphology change by plasma treatment increased surface friction due to an enhancement of fiber-to-fiber friction, resulting in change of other low-stress mechanical properties of fabric.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제53권11호
• /
• pp.566-571
• /
• 2004

Pulse modulation technique provide additional controling method for electron temperature and density in rf and microwave processing plasma. Transient characteristics of electron density and temperature have been measured in pulse modulated rf inductively coupled argon plasma using simple probe circuit. Electron temperature relaxation is clearly identified in the after glow stage. Controllability of average electron temperature and density depends on the modulation frequency and duty ratio. Numerical calculation of time-dependent electron density and temperature have been performed based on the global model. It has been shown that simple langmuir probe measurement method used for continuous plasma is also applicable to time-dependent measurement of pulse modulated plasma.

• 반도체디스플레이기술학회지
• /
• 제2권4호
• /
• pp.13-17
• /
• 2003

An adaptor is designed for chamber impedance measurement of plasma process. Copper rod, fixed board and compensation circuit are the major components of the adaptor. An adaptor can be to measure chamber impedance on time unless stopping a process and Data to measure can do the database. We can use it to a criteria data for a failure diagnosis. So developed adaptor could be used for diagnosis the plasma process chamber in semiconductor industry.

• 동굴
• /
• 제78호
• /
• pp.29-31
• /
• 2007

This paper is devoted to a study of the characterization of the plasma state. For the purpose of monitoring plasma condition, we experiment on reactive ion etching (RIE) process. Without actual etch process, generated oxygen plasma, measurement of plasma emission intensity. Changing plasma process parameters, oxygen flow, RF power and chamber pressure have controlled. Using the optical emission spectroscopy (OES), we conform to the unique oxygen wavelength (777nm), the most powerful intensity region of the designated range. Increase of RF power and chamber pressure, emission intensity is increased. oxygen flow is not affect to emission intensity.

• 한국표면공학회지
• /
• 제36권1호
• /
• pp.74-78
• /
• 2003

The corrosion failure of electronic devices has been a major reliability concern lately. This failure is an ongoing concern because of miniaturization of integrated circuits (IC) and the increased use of polymers in electronic packaging. Recently, plasma-polymerized cyclohexane films were considered as a possible candidate for a interlayer dielectric for multilever metallization of ultra large scale integrated (ULSI) semiconductor devices. In this paper the protective ability of above films as a function of deposition temperature and RF power in an 3.5 wt.% NaCl solution were examined by polarization measurement. The film was characterized by FTIR spectroscopy and contact angle measurement. The protective efficiency of the film increased with increasing deposition temperature and RF power, which induced the higher degree of cross-linking and hydrophobicity of the films.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.220-220
• /
• 2011

The Ne-Xe plasmas in dense plasma-focus device with coaxial electrodes were generated for extreme ultraviolet (EUV) lithography. The influence of gas mixture ratio, Ne-Xe (1, 10, 15, 20, 25, 30, 50%) mixture gas, on EUV emission measurement, EUV intensity and electron temperature in the coaxially focused plasma were investigated. An input voltage of 4.5 kV was applied to the capacitor bank of 1.53mF and the diode chamber was filled with Ne-Xe mixture gas at a prescribed pressure. The inner surface of the cylindrical cathode was lined by an acetal insulator. The anode was made of tin metal. The EUV emission signal of the wavelength in the range of 6~16 nm has been detected by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission line was also detected by the composite-grating spectrometer of the working wavelength range of 200~1100 nm (HR 4000CG). The electron temperature is obtained by the optical emission spectroscopy (OES) and measured by the Boltzmann plot with the assumption of local thermodynamic equilibrium (LTE).

• Fibers and Polymers
• /
• 제5권2호
• /
• pp.151-155
• /
• 2004

Cold plasma of $O_2$ or Ar was irradiated on hydrophobic Kapton surface to attenuate or remove the electrostatic potential. A measurement on charge dissipation speed clarifies the obscure effect of plasma. These consequences reveal that $O_2$ plasma etching is more effective than Ar plasma. After 30 days, the dissipation speed of accumulated charge on initially etched sample has not changed under summer season.

• 전기학회논문지
• /
• 제60권10호
• /
• pp.1895-1902
• /
• 2011

This work was carried out for the measurement of vibration and rotation temperature using the optical emission spectroscopy of nitrogen second positive system in the small plasma torch. Among emissions $N_2$ SP systems, the emission of $N_2$ SP(0-0) was so strong. Emission peaks of SP system increased until the position of 12.5[mm] from the end of plasma torch, after that it decreased. However, vibration temperature decreased from 1540[K] to 1000[K] at the position of 12.5[mm]. In addition, rotational temperature was about 400[K] at the position of 10[mm] and it increased a little as much of 420[K] at 12.5[mm]. Consequently, the plasma torch discussed in this work is possible to apply in the surface treatment process under the low temperature.