• Proceedings of the KIEE Conference
• /
• 2001.07b
• /
• pp.723-725
• /
• 2001

Ion plating method using plasma is faster as several times than electron beam plating method in plating process. Recently, a variety of techniques for this method are being researched. In this paper to produce sheet plasma with high density for ion plating we designed magnetic circuit of MgO plating device consisting of solenoid coil, rectangular permanent magnet. And, we researched on the effect of those by analyzing magnetic field distribution using FEM.

• Journal of the Korean institute of surface engineering
• /
• v.25 no.3
• /
• pp.133-143
• /
• 1992

Titanium nitride(TiN) films have been prepared by HCD plasma enhanced reactive ion plating. Density and temperature of the plasma generated by the HCD were investigated. It was shown that parameters such as the substrate bias voltage(0 350V) and N2 flow rate(10 180SCCM) influenced the growth, the growth, the microstructure and the color tone of the film mostly. In order to study the interface region, surface analysis by AES combined with sputter depth profiling was performed. Microhardness of the coated TiN films were measured by micro Vickers hardness tester. Also, the effect of coating parameters on composition, coating surface and fracture morphology, grain size and growth rate were examined.

• Journal of the Korean Society for Aeronautical & Space Sciences
• /
• v.48 no.8
• /
• pp.611-620
• /
• 2020

The effect of discharge voltage on electron mean energy, electric potential, ionization rate, neutral and ion density of Hall thruster was analyzed using a two-dimensional axisymmetric hybrid model. The results of the code developed for this study such as discharge current, thrust, and plasma distribution according to discharge voltage of SPT-100ML Hall thruster were compared by experiments and calculations of other researchers for validation. The results show that the electron mean energy, the ionization rate, and the ion density are increased while the neutral density is decreased as the discharge voltage is increased. The thrust and the discharge current are proportional to the discharge voltage.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2001.11a
• /
• pp.35-35
• /
• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.3
• /
• pp.87-92
• /
• 1997

Inductively coupled Cl$_{2}$ plasma has been studied to etch Pt thin films, which hardly form volatile compound with any reactive gas at normal process temperature. Low etch rate and residue problems are frequently observed. For higher etch rate, high density plasma and higher process temperature is adopted observed. For higher etch rate, high density plasma and higher process temperature is adopted and thus SiO$_{2}$ is used as for patterning mask instead of photoresist. The effect of O$_{2}$ or Ar addition to Cl$_{2}$ was investigated, and the chamber pressure, gas flow rate, surce RF power and bias RF power are also varied to check their effects on etch rate and selectivity. The major etching mechanism is the physical sputtering, but the ion assisted chemical raction is also found to be a big factor. The proposs can be optimized to obtain the etch rate of Pt up to 200nm/min and selectivity to SiO$_{2}$ at 2.0 or more. Patterning of submicron Pt lines are successfully demonstrated.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.463-463
• /
• 2012

ITRS (international technology roadmap for semiconductors)에 따르면 MOS(metal-oxide-semiconductor)의 CD (critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/$SiO_2$를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두된다고 보고하고 있다. 일반적으로 high-k dielectric를 식각시 anisotropic 한 식각 형상을 형성시키기 위해서 plasma를 이용한 RIE (reactive ion etching)를 사용하고 있지만 PIDs (plasma induced damages)의 하나인 PIED (plasma induced edge damage)의 발생이 문제가 되고 있다. PIED의 원인으로 plasma의 direct interaction을 발생시켜 gate oxide의 edge에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 high-k dielectric의 식각공정에 HDP (high density plasma)의 ICP (inductively coupled plasma) source를 이용한 원자층 식각 장비를 사용하여 PIED를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. One-monolayer 식각을 위한 1 cycle의 원자층 식각은 총 4 steps으로 구성 되어 있다. 첫 번째 step은 Langmuir isotherm에 의하여 표면에 highly reactant atoms이나 molecules을 chemically adsorption을 시킨다. 두 번째 step은 purge 시킨다. 세 번째 step은 ion source를 이용하여 발생시킨 Ar low energetic beam으로 표면에 chemically adsorbed compounds를 desorption 시킨다. 네 번째 step은 purge 시킨다. 결과적으로 self limited 한 식각이 이루어짐을 볼 수 있었다. 실제 공정을 MOS의 high-k dielectric에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU (North Carolina State University) CVC model로 구한 EOT (equivalent oxide thickness)는 변화가 없으면서 mos parameter인 Ion/Ioff ratio의 증가를 볼 수 있었다. 그 원인으로 XPS (X-ray photoelectron spectroscopy)로 gate oxide의 atomic percentage의 분석 결과 식각 중 발생하는 gate oxide의 edge에 trap의 감소로 기인함을 확인할 수 있었다.

• Transactions on Electrical and Electronic Materials
• /
• v.16 no.6
• /
• pp.346-350
• /
• 2015

In this study, we carried out an investigation of the etch characteristics of TiO₂ thin films and the selectivity of TiO₂ to SiO₂ in adaptive coupled C1₂/Ar plasma. The maximum etch rate of the TiO₂ thin film was 136±5 nm/min at a gas mixing ratio of C1₂/Ar (75%:25%). The X-ray photoelectron spectroscopy (XPS) analysis showed the efficient destruction of oxide bonds by the ion bombardment as well as the accumulation of low volatile reaction products on the etched surface.

• Proceedings of the KIEE Conference
• /
• 1999.11d
• /
• pp.1066-1068
• /
• 1999

Magnetic field is commonly used in low temperature processing plasmas in order to obtain high density. E $\times$ B magnetron or surface multipole configuration were most popular. However, the properties of capacitively coupled rf plasma confined by axially applied static magnetic fields have rarely been studied. In this paper, the effects of magnetic field on the characteristics of 13.56MHz/40KHz argon plasma will be reported. Ion saturation current, electron temperature and plasma potential were measured by Langmuir probe and omissive probe. At low pressure region ($\sim$10mTorr), ion current was increased by a factor of 3 - 4 due to reduction of diffusion loss of charged particles to the wall. It was observed that magnetic field induces large time variation of the plasma potential. The experimental result was compared with particle-in-cell simulation. It was also observed that electron temperature tend to decrease with increasing magnetic induction level for 40KHz discharge.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.74-74
• /
• 2009

The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.

• Journal of the Korean Vacuum Society
• /
• v.9 no.1
• /
• pp.7-15
• /
• 2000

An ECR-PECVD system with the characteristics of high ionization rat다 ability of plasma processing in a wide pressure range and deposition at low temperature was manufactured and characterized for the deposition of thin films. The system consists of a vacuum chamber, sample stage, vacuum gauge, vacuum pump, gas injection part, vacuum sealing valve, ECR source and a control part. The control of system is carried out by the microprocessor and the ROM program. We have investigated the vacuum characteristics of ECR-PECVD system, and also have diagnosed the characteristics of ECR microwave plasma by using the Langmuir probe. From the data of system and plasma characterization, we could confirmed the stability of pressure in the vacuum chamber according to the variation of gas flow rate and the effect of ion bombardment by the negative DC self bias voltage. The plasma density was increased with the increase of gas flow rate and ECR power. On the other hand, it was decreased with the increase of horizontal radius and distance between ECR source and probe. The calculated plasma densities were in the range of 49.7\times10^{11}\sim3.7\times10^{12}\textrm{cm}^{-3}$. It is also expected that we can estimate the thickness uniformity of film fabricated by the ECR-PECVD system from the distribution of the plasma density.