• The Bulletin of The Korean Astronomical Society
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• v.42 no.2
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• pp.65.4-65.4
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• 2017

The laboratory astrophysics is a new emerging field of basic sciences, and has tremendous discovery potentials. The laboratory astrophysics investigates the basic physical phenomena in the astrophysical objects in controlled and reproducible manners, which has become possible only recently due to the newly-established intense photon and ion beam facilities worldwide. In this presentation, we will introduce several promising ideas for laboratory astrophysics programs that might be readily incorporated in the Pohang Accelerator Laboratory X-ray Free Electron Laser (PAL-XFEL). For example, precise spectroscopic measurements using Electron Beam Ion Trap (EBIT) and intense X-ray photons from the PAL-XFEL can be performed to explore the fundamental processes in high energy X-ray phenomena in the visible universe. Besides, in many violent astrophysical events, the energy density of matter becomes so high that the traditional plasma physics description becomes inapplicable. Generation of such high-energy density states can be also be achieved by using the intense photon beams available from the PAL-XFEL.

• Journal of the Korean institute of surface engineering
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• v.31 no.4
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• pp.181-190
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• 1998

Al ion plating was carried to improve corrosion resistance of Nd-based permanent magnet made by prwder molding method. The effects of applied votage, pressyre and temperature were investigated to find the reation between coating parameters and their properties. Density of coating layer increased with voltage and thus corrosion resistance improved. However when voltage was applied more than 1000V, corrosion resistance whet down because of resputtering effect. Good corrosion resistance was acquired when gas pressure was $5.0\times10^-2$>torr, which is satisfied momentum energy of Ar, Al ions as well as quantity of plasma. The layer coated in low temperature range have better surface density and corrosion resistance than in high temperature. This result is seemed due to the characteristics of substrate itself. All coating layers were showed stong adhesion with substrate.

• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.57-62
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• 2005

Using intense pulsed ion beam evaporation technique, we have succeeded in the preparation of poly crystalline silicon thin films without impurities on silicon substrate. Good crystallinity and high deposition rate have been achieved without heating the substrate by using lEE. The crystallinity of poly-Si film has been improved with the high density of the ablation plasma. The intense diffraction peaks of poly-Si thin films could be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films were increased by applying (-) bias voltage for the substrate.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.3
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• pp.133-136
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• 2004

Low-Pressure inductively coupled RF discharge sources have important industrial applications mainly because they can provide a high-density electrodeless plasma source with low ion energy and low power loss. In an inductive discharge, the RF power is coupled to the plasma by an electromagnetic interaction with the current flowing in a coil. In this paper, the experiments have been focussed on the electric characteristic and carried out using a single Langmuir probe. The internal electric characteristics of inductively coupled Ar RF discharge at 13.56(MHz) have been measured over a wide range of power at gas pressure ranging from 1∼70(mTorr).

• Transactions on Electrical and Electronic Materials
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• v.10 no.1
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• pp.1-4
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• 2009

Dry etching characteristics of indium tin oxide films and etch selectivities over photoresist films were investigated using $Cl_2/HBr$ inductively coupled plasma. From a Langmuir probe diagnostic system, it was observed that while the plasma temperature was kept nearly constant in spite of the change of the HBr mixing ratio, the positive ion density decreases rapidly with increasing the mixing ratio. On the other hand, a quadrupole mass spectrometer showed that the neutral HBr and Br species increased. The etching mechanism in the $HBr/Cl_2$ plasma was analyzed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.490-490
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• 2013

In semiconductor industry, it is expected that plasma process which use 450 mm source will be used at next generation. However, main obstacle of the large area plasma source is plasma uniformity from it. When electrode is enlarged, field difference between center area and side area reduces the plasma uniformity [1-3]. Therefore we investigate multi-electrode which diminish this field difference.We designed two multi-electrode models. One has two segments and the other has five segments. Each multi-electrode model is connected with two power generator and two matchers. One generator and one matcher is connected with center electrode part. The other one generator and the other one matcher is connected with side electrode part. The ion density is measured at 29 points by using floating harmonic method [4-6]. After measuring the data of each multi-electrode model, we discuss the difference of profile between two models' data.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.472-472
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• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.361-366
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• 2001

It is difficult to obtain high Cu nucleation density and continuous Cu films in Cu-MOCVD without cleaning the TiN substrate prior to Cu deposition. In this study effects of plasma precleaning on the Cu nucleation density were investigated using SEM, XPS, AES, AFM analyses. Direct plasma pretreatment is much more effective than remote plasma pretreatment in enhancing Cu nucleation. Cleaning effects are enhanced with increasing the rf-power and the plasma exposure time in hydrogen plasma pretreatment. The mechanism through which Cu nucleation is enhanced by plasma pretreatment is as follows: Hydrogen ion\ulcorner in the hydrogen plasma react with TiN to form Ti and $NH_3$ Cu nucleation is easier on the Ti substrate than TiN substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.147-147
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• 2012

Cutoff probe has been used for measuring a plasma density using the cutoff peak which is located at the plasma frequency in the low pressure plasma. However, research on analysis of low frequency region of transmission microwave frequency (TMF) spectrum does not performed even though important plasma parameters are located in the low frequency region, i.e., ion plasma frequency and collision frequency. In this research, we analyzed the low frequency region of the TMF spectrum. Experimental results reveal the effect of plasma parameters on the low frequency region on the TMF spectrum. Based on the response of TMF spectrum from changing of plasma parameters, deduction of the plasma parameters was tried. This comprehensive analysis of TMF spectrum expands applicable area of cutoff probe.

• Korean Chemical Engineering Research
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• v.52 no.3
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• pp.378-381
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• 2014

We studied the pasteurization effect of the microorganism involved in the water, using ion-exchanging filter made of the Radiation Induced Grafted Polymerization. This ion-exchanging filter is made by the graft polymerization of GMA, after irradiation of electron beam to the non-woven filter. Then, we made the ion-exchanging filter (EtA, DEA, SS) applying ion-exchanging base to the GMA filter. As a result, the density of the ion-exchanging base is shown as 2.38 mol/kg in case of EtA, 1.79 mol/kg in case of DEA and 0.75 mol/kg in case of SS. Through this filter made by this method, we measured the pasteurization power of E. coli. We found very high elimination rate such as log 4.65 in case of SS-dial filter, which is higher as 3.00 times in comparison with EtA, and 1.10 times in comparison with DEA. This data show the result is very excellent comparing with 3,000 CFU/ml. of city water treatment basis.