• Journal of Advanced Marine Engineering and Technology
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• v.41 no.3
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• pp.238-244
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• 2017

Plasma ion nitriding has been widely used in various industries to improve the mechanical properties of materials, especially stainless steels by increasing the surface hardness. It has the particular advantages of less distortion compared to that in the case of hardening of steel, gas nitriding, and carburizing; in addition, it allows treatment at low-temperatures, and results in a high surface hardness and improved corrosion resistance. Many researchers have demonstrated that the plasma ion nitriding process should be carried out at temperatures of below $450^{\circ}C$ to improve corrosion resistance via the formation of the expanded austenite phase(S-phase). Most experimentals studied to date have been carried out in chloride solutions like HCl or NaCl. However, the electrochemical characteristics for the chloride solutions and natural seawater differ. Hence, in this work, plasma ion nitriding of 304 stainless steels was performed at various temperatures, and the electrochemical characteristics corresponding to the different process temperatures were analyzed for the samples in natural seawater. Finally the optimum plasma ion nitriding temperature that resulted in the highest corrosion resistance was determined.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.463-463
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• 2012

ITRS (international technology roadmap for semiconductors)에 따르면 MOS(metal-oxide-semiconductor)의 CD (critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/$SiO_2$를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두된다고 보고하고 있다. 일반적으로 high-k dielectric를 식각시 anisotropic 한 식각 형상을 형성시키기 위해서 plasma를 이용한 RIE (reactive ion etching)를 사용하고 있지만 PIDs (plasma induced damages)의 하나인 PIED (plasma induced edge damage)의 발생이 문제가 되고 있다. PIED의 원인으로 plasma의 direct interaction을 발생시켜 gate oxide의 edge에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 high-k dielectric의 식각공정에 HDP (high density plasma)의 ICP (inductively coupled plasma) source를 이용한 원자층 식각 장비를 사용하여 PIED를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. One-monolayer 식각을 위한 1 cycle의 원자층 식각은 총 4 steps으로 구성 되어 있다. 첫 번째 step은 Langmuir isotherm에 의하여 표면에 highly reactant atoms이나 molecules을 chemically adsorption을 시킨다. 두 번째 step은 purge 시킨다. 세 번째 step은 ion source를 이용하여 발생시킨 Ar low energetic beam으로 표면에 chemically adsorbed compounds를 desorption 시킨다. 네 번째 step은 purge 시킨다. 결과적으로 self limited 한 식각이 이루어짐을 볼 수 있었다. 실제 공정을 MOS의 high-k dielectric에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU (North Carolina State University) CVC model로 구한 EOT (equivalent oxide thickness)는 변화가 없으면서 mos parameter인 Ion/Ioff ratio의 증가를 볼 수 있었다. 그 원인으로 XPS (X-ray photoelectron spectroscopy)로 gate oxide의 atomic percentage의 분석 결과 식각 중 발생하는 gate oxide의 edge에 trap의 감소로 기인함을 확인할 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.615-619
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• 2007

MgO layer plays an important role for plasma display panels (PDPs). In this experiment, ion beam assisted deposition (IBAD) methode was uesed to deposit a MgO thin film and the assisting oxygen ion beam energy was varied from 100 eV to 500 eV. In order to investigate the relationship between the secondary electron emission and the defect levels of the MgO layer, we measured the cathodoluminescence (CL) spectra of the MgO thin films, and we analyzed the CL peak intensity and peak transition. The results showed that the assisting ion beam energy played an important role in the peak intensity and the peak transition of the CL spectrum. The properties of MgO thin film were also analyzed using XRD and SEM, these results showed the assisting ion beam energy had direct effect on characteristics of MgO thin film.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2008.03a
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• pp.546-549
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• 2008

Institute of Space and Astronautical Science of Japan Aerospace Exploration Agency(ISAS/JAXA) successfully developed and operated the microwave discharge ion engines onboard Hayabusa asteroid explorer. The ${\mu}10$ ion engines feature the cathode-less plasma generation in both the ion generators and neutralizers with the results of long life and high reliability in space. Based on the space achievements of ${\mu}10$ ion engines with 8mN thrust, 3,000sec Isp and 350W consumption power, several programs are currently under developments: ${\mu}20$, ${\mu}10$HIsp and ${\mu}1$. The first is a 20-cm diameter microwave discharge ion engine, aiming to achieve 30mN/kW in the thrustto-power ratio for the asteroid sample return mission larger than Hayabusa. The second is a high Isp version of ${\mu}10$, and exhausts the plasma beam over 10,000sec Isp using 15kV acceleration voltage for deep space missions to such as Jupiter and Mercury. The third is ${\mu}1$ to be adapted to small satellites for drag-free.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.5
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• pp.755-760
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• 2012

In this study, three dimensional cutting force components and surface roughness appeared in high speed cutting by using tungsten carbide endmill tools implanted ion or not found mutual relations through several analysis of statistical dispersion. It is showed that cutting force(Fx) is affect with spindle speed and feed rate, cutting force(Fy) is affect with spindle speed and ion implantation time and cutting force(Fz) is affect with feed rate in interaction through the statistical method of ANOVA of cutting force and surface roughness, it is analyzed that it is affected of spindle speed and feed rate in surface roughness.

• Bulletin of the Korean Space Science Society
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• 2009.10a
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• pp.43.4-44
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• 2009

electron, ion, heavy ion으로 구성 된 plasma에서 hump type과 kink type(double layer)의 electrostatic solitary waves이 존재할 수 있다는 것을 pseudopotential method를 이용한 결과와 1d PIC(Particle-In-Cell) simulation method의 결과에서 각각 확인하였다. 1d PIC simulation에서 초기에 각각의 입자 종(species; electron, ion, heavy ion)의 밀도섭동(density perturbation)은 Gaussian 형태로 주었으며, 각각의 입자들의 drift velocity는 각각의 plasma 입자 종들의 thermal velocity로 나란한 방향으로 주었다.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.956-960
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• 2004

Effects of ion implantation and deposition on the tribological properties of DLC film as a function of implanted energies and process times were investigated. TiC ions were implanted and deposited on the Si-wafer substrates followed by DLC coating using ion beam deposition method. In order to study tribological properties such as friction coefficient and behavior of DLC film on the modified surface as a function of implanted energies and process times, we used a ball-on-disc type apparatus in the atmospheric environment. From results of wear test, as the implanted energy was increased, the friction coefficient was more stable below 0.1.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.231-237
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• 2001

Etch rates up to 120 nm/min for $Ta_{2}O_{5}$ were achieved in both $SF_{6}/Ar$ and $Cl_{2}/Ar$ discharges. The effect of ultraviolet (UV) light illumination during ICP etching on $Ta_{2}O_{5}$ etch rate in those plasma chemistries was examined and UV illumination was found to produce significant enhancements in $Ta_{2}O_{5}$ etch rates most likely due to photoassisted desorption of the etch products. The effects of ion flux, ion energy, and plasma composition on (Ba, Sr)$TiO_3$ etch rate were examined and maximum etch rate ~90 nm/min was achieved in $Cl_{2}/Ar$ ICP discharges while $CH_{4}/H_{2}/Ar$ chemistry produced extremely low etch rates (${\leq}10\;nm/min$) under all conditions.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.54-62
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• 1998

In a plasma etching system, ions become an important parameter in determining the wafer topography which depends on both the physical sputtering mechanism and the chemically enhanced reaction. this paper reports the energy and angular distributions of ions across the plasma sheath using a monte carlo method. The ion distribution is mainly affected by the magnitude of the sheath voltage and by the collision in the sheath. Furthemore, the local potential distribution in a plamsa sheath has been determined by solving the poisson's equation. In th is work, ionic collisions were cosidered in terms of both charge exchange and momentum transfer. The three-dimensional distributions of ions were calculated with varying the input process conditions in the plasma reactor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.58-61
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• 2002

SBT thin films were etched at different content of Cl$_2$in Cl$_2$/Ar plasma. We obtained the maximum etch rate of 883 ${\AA}$/min at Cl$_2$(20%)/Ar(80%). As Cl$_2$ gas increased in Cl$_2$/Ar plasma, the etch rate decreased. The maximum etch rate may be explained by variation of volume density for Cl atoms and by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction with formation of low-volatile products, which can be desorbed only by ion bombardment. The variation of volume density for Cl, F and Ar atoms and ion current density were measured by the optical emission spectroscopy and Langmuir probe. To evaluate the physical damage due to plasma, X-ray diffraction and atomic force microscopy analysis carried out. After etching process, P-E hysteresis loops were measured by ferroelectric workstation.