• Journal of Life Science
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• v.21 no.12
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• pp.1710-1715
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• 2011

The bactericidal effect of nano plasma ion (NPi) which was generated by NPi was analyzed using different kinds of microorganisms, exposure times, chamber sizes, ion amounts and distance. As the result of Escherichia coli, Pseudomonas aeruginosa, Salmonella typhimurium, Klebsiella pneumoniae, Staphylococcus aureus and Bacillus subtilis were shown different in decrement. Gram-negative bacteria E. coli showed the highest percentage (96.57%) and Gram-positive bacteria B. subtilis which produced spore has the lowest percentage (57.41%). From the exposure time of NPi most of the microorganisms were extinct at an early stage. According to the size of the chamber we compared the loss of E.coli and the experiment result shown, analyzed NPi using 5 chambers $0.005m^3$ to $30m^3$ for 2 hr, that when volume of the chamber increased, saturation ion and bactericidal effect was decreased. In addition, an NPi generator installed in the $1m^3$ chamber investigated the decrement of E. coli. Saturation ion concentration increased with decrement. Finally, E. coli showed a similar reduction according to the distance from NPi generator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.126-126
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• 2009

Noninvasive plasma diagnostic technique is introduced to analyze and characterize HICP (Helmholtz Inductively Coupled Plasma) source during the plasma etching process. The HICP reactor generates plasma mainly through RF source power at 13.56MHz RF power and RF bias power of 12.56MHz is applied to the cathode to independently control ion density and ion energy. For noninvasive sensors, the RF sensor and the OES (Optical emission spectroscopy) were employed since it is possible to obtain both physical and chemical properties of the reactor with plasma etching. The plasma impedance and optical spectra were observed while altering process parameters such as pressure, gas flow, source and bias power during the poly silicon etching process. In this experiment, we have found that data measured from these noninvasive sensors can be correlated to etch results. In this paper, we discuss the relationship between process parameters and the measurement data from RF sensor and OES such as plasma impedance and optical spectra and using these relationships to analyze and characterize H-ICP source.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.368-368
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• 2008

Ion implantation has been widely developed during the past decades to become a standard industrial tool. To comply with the growing needs in ion implantation, innovative technology for the control of ion beam parameters is required. Beam current, beam profile, ion fractions are of great interest when uniformity of the implant is an issue. Especially, it is important to measure the spatial distribution of beam power and also the energy distribution of accelerated ions. This energy distribution is influenced by the proportion of mass for ion in the plasma generator(ion source) and by charge exchange and dissociation within the accelerator structure and also by possible collective effects in the neutralizer which may affect the energy and divergence of ions. Hydrogen atom has been the object of a good study to investigate the energy distribution. Hydrogen ion sources typically produce multi-momentum beams consisting of atomic ion ($H^+$) and molecular ion ($H_2^+$ and $H_3^+$). In the beam injector, the molecular ions pass through a charge-exchanges gas cell and break up into atomic with one-half (from $H_2^+$) or one-third (from $H_3^+$) according to their accelerated energy. Burrell et al. have observed the Doppler shifted lines from incident $H^+$, $H_2^+$, and $H_3^+$ using a Doppler shift spectroscopy. Several authors have measured the proportion of mass for hydrogen ion and deuterium using an ion source equipped with a magnetic dipole filter. We developed an ion implanter with 50-KeV and 20-mA ion source and 100-keV accelerator tube, aiming at commercial uses. In order to measure the proportion of mass for ions, we designed a filter system which can be used to measure the ion fraction in any type of ion source. The hydrogen and helium ion species compositions are used a filter system with the two magnets configurations.

• Journal of the Korean Society of Safety
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• v.14 no.4
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• pp.126-134
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• 1999

In this study, plasma source ion implantation was used to improve the wear properties of biocompatible titanium implant. In order to observe the effect of ion energy and dose on wear property of titanium implant, pin-on-disk type wear tests in Hank's solution were carried out. The friction coefficient of ion implanted specimens were increased from 0.47 to 0.65 under high energy and ion dose conditions. As increasing ion energy and ion dose, the amount of wear was reduced.

• Applied Science and Convergence Technology
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• v.24 no.4
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• pp.102-110
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• 2015

Fluid model based numerical analysis is done to simulate a plasma processing system with electrodes at floating potential. $V_f$ is a function of electron temperature, electron mass and ion mass. Commercial plasma fluid simulation softwares do not provide options for floating electrode boundary value condition. We developed a user subroutine in CFD-ACE+ and compared four different cases: grounded, dielectric, zero normal electric field and floating electric potential for a 2D-CCP (capacitively coupled plasma) with a ring electrode.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.942-945
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• 1999

In this work, we proposed Proper etching algorithm for ultra-large scale integrated circuit device and simulated etching process using the proposed algorithm in the case of ICP (inductive coupled plasma) 〔1〕source. Until now, many algorithms for etching process simulation have been proposed such as Cell remove algorithm, String algorithm and Ray algorithm. These algorithms have several drawbacks due to analytic function; these algorithms are not appropriate for sub 0.1 ${\mu}{\textrm}{m}$ device technologies which should deal with each ion. These algorithms could not present exactly straggle and interaction between Projectile ions and could not consider reflection effects due to interactions among next projectile ions, reflected ions and sputtering ions, simultaneously In order to apply ULSI process simulation, algorithm considering above mentioned interactions at the same time is needed. Proposed algorithm calculates interactions both in plasma source region and in target material region, and uses BCA (binary collision approximation4〕method when ion impact on target material surface. Proposed algorithm considers the interaction between source ions in sheath region (from Quartz region to substrate region). After the collision between target and ion, reflected ion collides next projectile ion or sputtered atoms. In ICP etching, because the main mechanism is sputtering, both SiO$_2$ and Si can be etched. Therefore, to obtain etching profiles, mask thickness and mask composition must be considered. Since we consider both SiO$_2$ etching and Si etching, it is possible to predict the thickness of SiO$_2$ for etching of ULSI.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.72-77
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• 2021

The radial distribution of etch rate was analyzed using the ion energy flux model in VHF-CCP. In order to exclude the effects of polymer passivation and F radical depletion on the etching. The experiment was performed in Ar/SF6 plasma with an SF6 molar ratio of 80% of operating pressure 10 and 20 mTorr. The radial distribution of Ar/SF6 plasma was diagnosed with RF compensated Langmuir Probe(cLP) and Retarding Field Energy Analyzer(RFEA). The radial distribution of ion energy flux was calculated with Bohm current times the sheath voltage which is determined by the potential difference between the plasma space potential (measured by cLP) and the surface floating potential (by RFEA). To analyze the etch rate uniformity, Si coupon samples were etched under the same condition. The ion energy flux and the etch rate show a close correlation of more than 0.94 of R² value. It means that the etch rate distribution is explained by the ion energy flux.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.262-270
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• 2004

Basic experiments were carried out using the THT-IV low-power Hall thruster to examine the influences of magnetic field shape and strength, and acceleration channel length on thruster performance and to establish guidelines for design of high-performance Hall thrusters. Thrusts were measured with varying magnetic field and channel structure. Exhaust plasma diagnostic measurement was also made to evaluate plume divergent angles and voltage utilization efficiencies. Ion current spatial profiles were measured with a Faraday cup, and ion energy distribution functions were estimated from data with a retarding potential analyzer. The thruster was stably operated with a highest performance under an optimum acceleration channel length of 20 mm and an optimum magnetic field with a maximum strength of about 150 Gauss near the channel exit and with some shape considering ion acceleration directions. Accordingly, an optimum magnetic field and channel structure is considered to exist under an operational condition, related to inner physical phenomena of plasma production, ion acceleration and exhaust plasma feature. A new Hall thruster was designed with basic research data of the THT-IV thruster. With the thruster with many considerations, long stable operations were achieved. In all experiments at 200-400 V with 1.5-3 mg/s, the thrust and the specific impulse ranged from 15 to 70 mN and from 1100 to 2300 see, respectively, in a low electric power range of 300~1300 W. The thrust efficiency reached 55 %. Hence, a large map of the thruster performance was successfully made. The thermal characteristics were also examined with data of both measured and calculated temperatures in the thruster body. Thermally safe conditions were achieved with all input powers.

• Journal of Pharmaceutical Investigation
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• v.34 no.6
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• pp.513-519
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• 2004

A sensitive method for quantification of pinaverium bromide in human plasma was established using liquid chromatography-electrospray ionization tandem mass spectrometry(LC-ESI-MS/MS). Glimepiride was used as internal standard. Pinaverium bromide and internal standard in plasma sample were extracted using tert-butylmethylether(TBME). A centrifuged upper layer was then evaporated and reconstituted with mobile phase of acetonitrile-5 mM ammonium formate (80/20, pH 3.0). The reconstituted samples were injected into a $C_{18}$ reversed-phase column. Using MS/MS with multiple reaction monitoring (MRM) mode, pinaverium and glimepirde were detected without severe interference from human plasma matrix. Pinaverium produced a protonated precursor ion $([M+H]^+)$ at m/z 510.3 and a corresponding product ion at m/z 228.9. Internal standard produced a protonated precursor ion $([M+H]^+)$ at m/z 491.5 and a corresponding product ion at m/z 352.0. Detection of pinaverium bromide in human plasma was accurate and precise, with limit of quantitation at 0.5 ng/ml. The method has been successfully applied to bioavailability study of pinaverium bromide tablet in Korean healthy male volunteers. Pharmacokinetic parameters such as $AUC_t,\;C_{max},\;T_{max},\;K_{el}\;and\;t_{1/2}$ were calculated.

• Nuclear Engineering and Technology
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• v.56 no.1
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• pp.216-221
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• 2024

Ion cyclotron range of frequency (ICRF) heating system is an important auxiliary heating method in the experimental Advanced Superconducting Tokamak (EAST). In EAST, several megawatts of power are transmitted with coaxial transmission lines and coupled to the plasma. For the long pulse and high power operation of the ICRF waves heating system, it is very important to effectively control the power and initial phase of the ICRF signals. In this paper, a power and phase feedback control system is described based on field programmable gate array (FPGA) devices, which can realize complicated algorithms with the advantages of fast running and high reliability. The transmitted power and antenna phase are measured by a power and phase detector and digitized. The power and phase feedback control algorithms is designed to achieve the target power and antenna phase. The power feedback control system was tested on a dummy load and during plasma experiments. Test results confirm that the feedback control system can precisely control ICRF power and antenna phase and is robust during plasma variations.