• 한국표면공학회지
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• 제49권2호
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• pp.135-140
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• 2016

In this study, we prepared magnesium ion containing oxide films formed on the Ti-6Al-4V using plasma electrolytic oxidation (PEO) treatment. Ti-6Al-4V surface was treated using PEO in Mg containing electrolytes at 270V for 5 min. The phase, composition and morphology of the Mg ion containing oxide films were evaluated with X-ray diffraction (XRD), Attenuated total reflectance Fourier transform infrared (ATR-FTIR) and filed-emission scanning electron microscopy (FE-SEM) with energy dispersive X-ray spectrometer (EDS). The biocompatibility of Mg ion containing oxide films was evaluated by immersing in simulated body fluid (SBF). According to surface properties of PEO films, the optimum condition was formed when the applied was 270 V. The PEO films formed in the condition contained the properties of porosity, anatase phase, and near 1.7 Ca(Mg)/P ratio in the oxide film. Our experimental results demonstrate that Mg ion containing oxide promotes bone like apatite nucleation and growth from SBF. The phase and morphologies of bone like apatite were influenced by the Mg ion concentration.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권1호
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• pp.21-26
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• 2003

4H-SiC Schottky rectifiers were exposed to pure Ar discharges in a planar coil Inductively Coupled Plasma system, as a function of source power, of chuck power and process pressure. The reverse breakdown voltage ($V_B$) decreased as a result of plasma exposure due to the creation of surface defects associated with the ion bombardment. The magnitude of the decrease was a function of both ion flux and ion energy. The forward turn-on voltage ($V_F$), on-state resistance ($R_{ON}$) and diode ideality factor (n) all increased after plasma exposure. The changes in all of the rectifier parameters were minimized at low power, high pressure plasma conditions.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2008년도 춘계학술대회 논문집
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• pp.409-410
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• 2008

• 센서학회지
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• 제7권3호
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• pp.163-170
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• 1998

플라즈마 이온온도를 측정하기 위해 정전평판형 이온에너지 분석기를 설계 제작하고 에너지 교정 및 에너지 분해능 등의 특성을 조사하였다. 일정한 검출기 위치에서 이온의 에너지에 따른 편향평판전압은 선형성을 보였으며, $53{\sim}103mm$ 사이의 검출기 위치에서 이온에너지에 대한 최대편향평판전압의 기울기는 $1.61{\sim}0.92$로 검출기위치의 증가에 따라 선형적으로 감소하였다. 본 실험 영역에서 에너지 분해능은 약 $4.16{\sim}11.60%$였으며, 검출기 위치 및 이온에너지의 증가에 따라 향상되었다. 상대적 검출효율은 검출기 위치의 증가에 따라 감소하였다. 제작된 분석기를 다목적 플라즈마 발생장치에 설치하여 DC 플라즈마의 이온에너지 스펙트럼을 측정하였다. 방전전압이 320V, 전류가 0.17A인 DC 플라즈마의 이온온도는 $203{\sim}205eV$로 나타났으며 검출기의 위치에 따른 이온온도의 변화는 없었다. 검출기의 위치에 따른 에너지 분해능은 $18{\sim}21%$로 검출기 위치가 증가할수록 향상되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.62-62
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• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.

• Journal of information and communication convergence engineering
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• 제9권5호
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• pp.587-590
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• 2011

The absence of deep traps for electrons in the spectrum of $As_{40}Se_{30}S_30$ localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous $As_{40}Se_{30}S_30$ films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1993년도 제4회 학술발표회 논문개요집
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• pp.6-6
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• 1993

With brief instroduction of fabrication methods of dia.ond fillls by plasma CVD, recent progress in diamond research mainly done in the author's laboratory at Osaka University is reviewed.especially on the following topics: "low temperature diallond fabrication", "ion implantation", "hydrogen plasma treatment of ion-implanted diaaond to remove ion-induced damage", "Oxygen diffusion into the bulk assisted by the hydrogen treatllent", and "hole-burning effect".ffect".

• 한국생물물리학회:학술대회논문집
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• 한국생물물리학회 2001년도 학술 발표회 진행표 및 논문초록
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• pp.39-39
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• 2001

Many physiological processes of plant cells, such as nutrient uptake, salt tolerance, and cell enlargement, are mediated by ion transports across the plasma membrane. H$^{＋}$-ATPases on both plasma and vacuolar membranes play major roles on active transports and ion channels mediate passive transports of various ions. It has been known that these proteins involved in cellular osmotic regulation and salt tolerance in the salt-accumulated soils.(omitted)

• 한국결정성장학회지
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• 제10권2호
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• pp.128-133
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• 2000

Numerical analysis of the transport phenomena in an inductively coupled plasma reactor was conducted with two-dimensional axisymmetric model including the electromagnetic field model, electron and species density models. The spatial distribution of the charged species in the ion flux to the wafer have been calculated to examine the influence of the process conditions including antenna and reactor geometry. The antenna radius had a significant influence on the plasma state and axial ion flux distribution.

• 천문학논총
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• 제2권1호
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• pp.13-20
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• 1985

Magnetic reconnect ion is studied numerically by means of a two dimensional MHD code. The initial magnetic field configuration is the two-dimensional dipole field, and the simulation model involves magnetic reconnect ion driven by the magnetized plasma flow. Strong plasma jetting, plasmoid formation and its fast ejection are observed in the downstream region. The dependence of reconnection rate on the incoming energy flux is found to be very sensitive, while the magnitude of the resistivity does not influence much on the reconnection rate. The simulation results are discussed in the context of the geomagnetic substorm.