• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.440-448
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• 2001

The operation properties of DBD plasma reactors were observed by using 20 kV square pulse at the cylindrical and planar type of reactors in the condition of air pressure. The optimum operation frequency $f_0$ which optimizes the efficiency of operation was found as such $f_0\proptoexp(-C)$ when the current-voltage curve and charge-voltage curve were observed. Using these properties the dissipated power was evaluated. The dissipated power at the optimum frequency of operation was varied as the value of capacitance which is dependent on the structure and the dielectric material of the reactor, and had the maximum value at the specific value of capacitance. With these value of capacitance, DBD reactors which has a high level of efficiency can be formed.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.1
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• pp.19-26
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• 2006

The ccrf-discharge has in comparison with the hollow-cathode discharge and DC-discharge some advantages: Simple design of the tube and homogeneous plasma. The ccrf-discharge was researched with the goal, to use on the excitation of the gas laser. In this work a rf-exciting system was planned and developed. With it a homogeneous discharge was produced in the cw operation. To supply the rf-power with the frequency 13.56[MHz] effectively in the discharge, laser tube were used with inner diameter of 5[mm] and the specially developed rf-electrodes. A matching circuit was composed also. Thereby the impedance of the discharge tube was adjusted to the 50[$\Omega$] output resistance of the rf-source.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.1
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• pp.5-9
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• 2004

In this paper, pulsed discharge is used to control the luminous color in gas discharge tubes. The luminous color of the positive column in gas discharge tubes filled with Hg-Ar-Ne (1: 9, 60［Torr］) and having no phosphor material, varies from red to blue emitted by the Ne and Hg from the pulsed discharge. With changing of pulse-width and frequency, the electron temperature in the transient period affects changes to the residual ion and metastable atom densities. The first metastable atoms containing energy levels of about 16.6 ［eV］have a very high probability that a collision will result in the ionization potential of Ar being 15.8 [eV]. The change of locus in the CIE chromaticity diagram with increasing pulse-width and frequency approves the variation of luminous color.

• Journal of the Korea Institute of Military Science and Technology
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• v.12 no.4
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• pp.483-490
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• 2009

In this paper, a novel low-damage silicon nitride passivation for 100nm InAlAs/InGaAs MHEMTs has been developed using remote ICPCVD. The silicon nitride deposited by ICPCVD showed higher quality, higher density, and lower hydrogen concentration than those of silicon nitride deposited by PECVD. In particular, we successfully minimized the plasma damage by separating the silicon nitride deposition region remotely from ICP generation region, typically with distance of 34cm. The silicon nitride passivation with remote ICPCVD has been successfully demonstrated on GaAs MHEMTs with minimized damage. The passivated devices showed considerable improvement in DC characteristics and also exhibited excellent RF characteristics($f_T$of 200GHz).The devices with remote ICPCVD passivation of 50nm silicon nitride exhibited 22% improvement(535mS/mm to 654mS/mm) of a maximum extrinsic transconductance($g_{m.max}$) and 20% improvement(551mA/mm to 662mA/mm) of a maximum saturation drain current ($I_{DS.max}$) compared to those of unpassivated ones, respectively. The results achieved in this work demonstrate that remote ICPCVD is a suitable candidate for the next-generation MHEMT passivation technique.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.1
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• pp.25-30
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• 2002

In this paper, high quality silicon nitride film is achieved using Plasma Enhanced Chemical Deposition(PECVD) system, and applied in passivating PHEMT's. Passivated PHEMT's(60 ${\mu}{\textrm}{m}$$\times$2 fingers) showed an increase of 2.7 % and 3 % in the drain saturation current and the maximum transconductance, respectively. The current gain cut-off frequency of 53 ㎓ and maximum oscillation frequency of 105 ㎓ were obtained from the fabricated PHEMT's.

• Journal of the Korean Society for Nondestructive Testing
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• v.33 no.1
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• pp.46-53
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• 2013

Impedance spectroscopy is a non-destructive evaluation (NDE) method first proposed and developed for evaluating TGO layers with compressive stress inside thermally degraded plasma-sprayed thermal barrier coatings (PS TBCs). A bode plot (phase angle (h) vs. frequency (f)) was used to investigate the TGO layer on electrical responses. In our experimental study, the phase angle of Bode plots is sensitive for detecting TGO layers while applying compressive stress on thermal barrier coatings. It is difficult to detect TGO layers in samples isothermally aged for 100 hrs and 200 hrs without compressive stress, and substantial change of phase was observed these samples with compressive stress. Also, the frequency shift of the phase angle and change of the phase angle are observed in samples isothermally aged for more than 400 hrs.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.63-63
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• 2018

본 연구는 플라즈마 전해 산화 (PEO) 및 RF (Radio Frequency) 스퍼터링을 이용한 2 단계 접근법에 의해 처리 된 MgO / Ni-Cr의 고내식성 이중층 코팅을 제조하기 위해 수행되었다. 이를 위해 $100mA/cm^2$ 교류 조건에서 180 s PEO를 한 후 150W 에서 900s RF 스퍼터링을 수행 하였다. 코팅의 형태는 주사전자현미경(SEM)을 사용하여 관찰되었으며 코팅의 상조성은 X-선 회절(XRD) 및 X-선 광전자 분광법(XPS)을 사용하여 분석하였다. SEM 이미지는 스퍼터링 된 Ni-Cr이 크랙의 대부분과 미세한 미세 공극을 덮어 코팅 결함이 감소함을 보여 주었다. 따라서, 코팅 된 샘플의 거칠기 값은 스퍼터링 공정 후에 감소되었다. 단면 이미지로부터, 스퍼터링된 코팅층은 낮은 두께 때문에 거의 검출되지 않았다. EDS, XRD 및 XPS를 사용한 조성 분석은 금속 상태의 형태로 Ni 및 Cr 존재를 나타내었고 XPS에서 NiCr2O4 부동태 피막이 검출되었다. MgO / Ni-Cr 이중층 코팅의 내부식성은 MgO / Ni-Cr 이중층을 가진 샘플의 금속 원소와 비교하여 우수한 부식 특성을 나타내는 전위 역학적 분극 시험 및 전기 화학적 임피던스 분광법으로 평가 하였다.

• Journal of the Korea Safety Management & Science
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• v.1 no.1
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• pp.241-258
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• 1999

For hazardous air pollutants(HAP) such as NO and $NO_{2}$ decomposition efficiency, power consumption, and applied voltage were investigated by SPCP(surface induced discharge plasma chemical processing) reactor to obtain optimum process variables and maximum decomposition efficiencies. Decomposition efficiency of HAP with various electric frequencies(5~50 kHz), flow rates(100~1,000 mL/min), initial concentrations(100~1,000 ppm), electrode materials(W, Cu, Al), electrode thickness(1, 2, 3 mm) and number of electrode windings(7, 9, 11) were measured. Experimental results showed that for the frequency of 10 kHz, the highest decomposition efficiency of 94.3 % for NO and 84.7 % for $NO_{2}$ were observed at the power consumptions of 19.8 and 20W respectively and that decomposition efficiency decreased with increasing frequency above 20 kHz. Decomposition efficiency was increased with increasing residence times and with decreasing initial concentration of pollutants. Decomposition efficiency was increased with increasing thickness of discharge electrode and the highest decomposition efficiency was obtained for the electrode diameter of 3 mm in this experiment. As the electrode material, decomposition efficiency was in order : tungsten(W), copper(Cu), aluminum(Al).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.426-426
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• 2008

ZnO 박막과 Al이 도핑된 ZnO 다결정질 박막을 rf magnetron sputtering 방법을 이용하여 Si(100) 기판과 코닝글라스 기판에 증착하여 박막의 광학적 특성을 Spectro-scopic Ellipsometry (SE, Woollam사)와 UV-VIR-NIR Sphectrophotometry (SP, Varian사)를 사용하여 분석하였다. SE 측정은 입사각도 55도에서 75도까지 5도 간격으로 파장범위 250 - 1700 nm 에서 3 nm 간격으로 측정하였으며, SP 측정은 수직입사로 250-3000 nm 파장범위에서 1 nm 간격으로 투과도와 반사도를 측정하였다. 측정된 데이터들은 Lorentz Oscillator 모델과 Drude free electron 모델이 결합된 분산관계식을 사용하여 전산 맞춤을 하여 분석하였다. ZnO 박막의 optical band gap energy 는 3.3 eV로 측정되었으며, Al 도핑에 따른 자유전하농도가 증가에 의하여 Burstein-Moss 효과에 따르는 optical band gap energy의 증가 거동을 보였다. 또한 자유전하농도 증가에 따라 band edge 부근에서 나타나는 excitonic transition 에 기인하는 유전함수 피크의 broadening이 관찰되었으며, high frequency dielectric constant는 자유 전하농도에 관계없이 3.689${\pm}$0.05 eV 의 값을 가졌다. Drude free electron 모델을 사용하여 plasma frequency를 구하고 이로부터 얻어진 optical mobility 와 Hall mobility를 비교하여 ZnO계 다결정질 박막에서의 결정립계가 이동도에 미치는 영향을 고찰하고자 한다.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.10-14
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• 2003

A low-cost, large area, random, maskless texturing scheme independent of crystal orientation is expected to have significant impact on terrestrial photovoltaic technology. We investigated silicon surface microstructures formed by reactive ion etching (R IE) in Multi-Hollow cathode system. Desirable texturing effect has been achieved when radio-frequency (rf) power of about 20 Watt per one hollow cathode glow is applied for our RF Multi -Hollow cathode system. The black silicon etched surface shows almost zero reflectance in the visible region as well as in near IR region. The etched silicon surface is covered by columnar microstructures with diameters from 50 to 100 nm and depth of about 500 nm. We have successfully achieved 11.7 % efficiency of mono-crystalline silicon solar cell and 10.2 % for multi-crystalline silicon solar cell.