• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.143.1-143.1
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• 2015

An inductively coupled plasma source driven by 13.56MHz was prepared for the deposition of a-C:H thin film. Properties of the plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe at first and second harmonic frequency were 13.56Mhz and 27.12Mhz respectively. Dependencies of plasma parameters on process parameters were agreed with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.126-126
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• 2009

Noninvasive plasma diagnostic technique is introduced to analyze and characterize HICP (Helmholtz Inductively Coupled Plasma) source during the plasma etching process. The HICP reactor generates plasma mainly through RF source power at 13.56MHz RF power and RF bias power of 12.56MHz is applied to the cathode to independently control ion density and ion energy. For noninvasive sensors, the RF sensor and the OES (Optical emission spectroscopy) were employed since it is possible to obtain both physical and chemical properties of the reactor with plasma etching. The plasma impedance and optical spectra were observed while altering process parameters such as pressure, gas flow, source and bias power during the poly silicon etching process. In this experiment, we have found that data measured from these noninvasive sensors can be correlated to etch results. In this paper, we discuss the relationship between process parameters and the measurement data from RF sensor and OES such as plasma impedance and optical spectra and using these relationships to analyze and characterize H-ICP source.

• 한국염색가공학회지
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• 제5권3호
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• pp.194-205
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• 1993

Plasma polymerization in prepared glow discharge was carried out to improve the bathochromic of dyed PET fabrics by using silicon containing vinyl monomer in plasma polymerization equipment which consists of a pair of electrodes was connected to the 13.56MHz RF generator. The optimum condition for the bathochromic effect was investigated on various plasma polymeriztion parameters. By plasma polymerization used silicon containing vinyl monomer, the bathochromic of dyed PET fabrics was very enhanced. The optimum conditions on this equipment were as follows ; electrode distance : 3cm, discharge output : 60W, gas pressure : 0.3 Torr, monomer flow rate : 30㎤/min. plasma polymerization time : 60sec. The apparent strength of plasma polymerized PET fabrics was increased about 40∼47% with decreasing about 3 of L value.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.236-236
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• 2011

Silicon oxynitride (SiON) was deposited for gas barrier film on polyethylene terephthalate (PET) using octamethylycyclodisiloxane (Si4O4C8H24, OMCTS) precursor by plasma enhanced chemical vapor deposition (PECVD) at low temperature. The ion flux and substrate temperature were measured by oscilloscope and thermometer. The chemical bonding structure and barrier property of films were characterized by Fourier transform infrared (FT-IR) spectroscopy and the water vapor transmission rate (WVTR), respectively. The deposition rate of films increases with RF bias and nitrogen dilution due to increase of dissociated precursor and nitrogen ion incident to the substrate. In addition, we confirmed that the increase of nitrogen dilution and RF bias reduced WVTR of films. Because, on the basis of FT-IR analysis, the increase of the nitrogen gas flow rate and RF bias caused the increase of the C=N stretching vibration resulting in the decrease of macro and nano defects.

• Korean Membrane Journal
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• 제1권1호
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• pp.65-72
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• 1999

The surface of polypropylene membrane was modified by plasma treatment using Ar,$N_{2}$, $NH_{2}$ and $O_{2}$ Permeabilities for $CO_{2}$, $N_{2}$ and separation factor for $CO_{2}$ relative to $N_{2}$ were measured. The permeation experiments were performed by a variable volume method at $25^{\circ}C$ and 0.303MPa. The effects of the plasma conditions such as treatement time power input gas flow rate and pressure in the reactor on the transport properties of modified membrane were investigated. The surface of the plasma treated membrane was analyzed by means of FTIR-ATR XPS and AFM. The surface structure of the plasma treated membrane was fairly different from that of the untreated membrane. Although the permeation rates for both $CO_{2}$ and $N_{2}$ decreased with increasing plasma treatement time the separation factor was found to be improved by the plasma treatement. The operating conditions of plasma treatement imposed on membranes had notable effect on the permeability and separation factor.

• Journal of Information Display
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• 제2권4호
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• pp.1-7
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• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

• Transactions on Electrical and Electronic Materials
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• 제14권2호
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• pp.71-77
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• 2013

Advanced semiconductor manufacturing technology requires methods to maximize tool efficiency and improve product quality by reducing process variability. Real-time plasma process monitoring and diagnosis have become crucial for fault detection and classification (FDC) and advanced process control (APC). Additional sensors may increase the accuracy of detection of process anomalies, and optical monitoring methods are non-invasive. In this paper, we propose the use of a chromatic data acquisition system for real-time in-situ plasma process monitoring called the Plasma Eyes Chromatic System (PECS). The proposed system was initially tested in a six-inch research tool, and it was then further evaluated for its potential to detect process anomalies in an eight-inch production tool for etching blanket oxide films. Chromatic representation of the PECS output shows a clear correlation with small changes in process parameters, such as RF power, pressure, and gas flow. We also present how the PECS may be adapted as an in-situ plasma arc detector. The proposed system can provide useful indications of a faulty process in a timely and non-invasive manner for successful run-to-run (R2R) control and FDC.

• Applied Science and Convergence Technology
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• 제26권6호
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• pp.179-183
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• 2017

The direct growth method is simplified manufacturing process used to avoid damages and contaminants from the graphene transfer process. In this paper, graphene nano-walls (GNWs) were direct synthesized using electron cyclotron resonance (ECR) plasma by varying the $CH_4/H_2$ gas flow rate on the copper foil at low temperature (without substrate heater). Investigations were carried out of the changes in the morphology and characteristic of GNWs due to the relative intensity of hydrocarbon radical and molecule in the ECR plasma. The results of these investigations were then discussed.

• 대한화학회지
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• 제41권6호
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• pp.292-298
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• 1997

유도코일을 5회 감고, 외측 석영관 길이를 일반적인 ICP(Inductively Coupled Plasma) 토오치에서 보다 50 mm 더 길게 제작한 수평형 ICP 방출원을 제작한 후, ICP 방출분광분석기를 구성하였다. 신호대 잡음비 및 바탕선의 세기를 고주파 출력, 시료 유량, 알곤가스 유량 그리고 차단가스 유량변화에 대하여 측정하고 최적조건을 구했다. 이들 조건에서,수직형 플라스마와 비교하여 분광분석학적으로 비슷한 정도의 특징을 가진 바탕선 스펙트럼을 파장범위 200~500 nm에서 얻었다. 납(II), 220.35 nm의 방출선에서 검출한계가 11 ppb로 산출되었으며, 수직형과 비교하여 약 5배 낮은 값을 보였다.

• 한국진공학회지
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• 제6권3호
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• pp.213-219
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• 1997

본 연구에서는 내전극 정전결합 유동가스형 반응장치를 이용하여 플라즈마 중합 스 티렌 박막을 제작하고 적외선분광스펙트럼, 열분해가tm크로마토그래피, 시차주사열량계 및 겔투과성 크로마토그래피의 분석을 통하여 중합조건이 분자구조 및 분자량 분포에 미치는 영향을 조사하였다. 위의 결과로부터 개시 모노머의 화학적 특성과는 다른 고도로 가교된 박막이 생성되었으며, 방전압력, 방전전력 및 가스의 유량 등의 중합조건 조절에 의해 분자 구조, 가교도, 분자량 분포 등의 제어가 가능함이 판명되었다. 따라서 내전극 정전결합 유동 가스형 반응장치에 의해 수행된 플라즈마중합법은 중합조건의 조절에 의해 센서의 감지막, 광도전성 소자 및 포토 레지스트 등에 응용가능한 기능성 유기박막의 제작에 좋은 특성을 나타내는 것을 알 수 있었다.