• 한국진공학회지
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• 제3권4호
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• pp.426-433
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• 1994

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 추계학술발표회
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• pp.89-89
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• 1996

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 추계 학술발표강연 및 논문개요집
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• pp.59-59
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• 2001

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 춘계학술발표회
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• pp.49-49
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• 1996

• 한국전기전자재료학회논문지
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• 제21권11호
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• pp.973-976
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• 2008

In addition to its similarity to genuine diamond film, diamond-like carbon (DLC) film has many advantages, including its wide band gap and variable refractive index. In this study, DLC films were prepared by the RF PECVD (Plasma Enhanced Chemical Vapor Deposition) method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas. We examined the effects of the RF power on the electrical properties of the DLC films. The films were deposited at several RF powers ranging from 50 to 175 W in steps of 25 W. The leakage current of DLC films increased at higher deposition RF power. And the resistivities of DLC films grown at 50 W and 175 W were $5\times10^{11}$ ${\Omega}cm$ and $2.68\times10^{10}$ ${\Omega}cm$, respectively.

• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.465-471
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• 1998

Diamond-like carbon (DLC) films have been prepared by means of the plasma enhanced chemical vapor deposition (PECVD) method using vertical-capacitor electrodes. The deposition rata in our experiment is relatively small compared with that in the conventional PECVD methods, which implies that the accumulation of the neutral $CH_n$ radicals on the substrates due to the gravitational movement may not contribute to the deposition of DLC films. The hardness and the transparency were measured as a function of the ratio of the partial pressure of $CH_4-H_2$ mixtures or the hydrogen contents of specimens. The coefficients of friction between DLC films and a $Si_3N_4$ tip measured by using a lateral force microscope are in the range of 0.024 to 0.033 which depend on the hydrogen contents in DLC, and the surface roughness depends mainly on the deposition rate. The optical gaps increase with increasing the hydrogen contents. DCL films deposited on Pt-coated Si wafers show the stable emission characteristics, and the turn-on fields are in the range of 11 to 20 $V/\mu$m.

• The Korean Journal of Ceramics
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• 제2권4호
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• pp.197-202
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• 1996

The highly oriented diamond particles were deposited on the mirror-polished (100) silicon substrates in the bell-jar type microwave plasma deposition system using a three-step process consisting if carburization, bias-enhanced nucleation and growth. By adjusting the geometry of the substrate and substrate holder, very dense disc-shaped plasma was formed over the substrate when the bias voltage was below -200V. Almsot perfectly oriented diamond films were obtained only in this dense disc-shaped plasma. From the results of the optical emission spectra of the dense disc-shaped plasma, it was found that the concentrations of atomic hydrogen and hydrocarbon radical were increased with negative bias voltage. It was also found that the highly oriented diamonds were deposited in the region, where the intensity ratios of carbonaceous species to atomic hydrogen are saturated.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2001년도 춘계학술발표회 초록집
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• pp.6-7
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• 2001

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.210-210
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• 2000

Vertically well aligned multi-wall carbon nanotubes (CNT) were grown on nickel coated glass substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 600$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. Effects of growth parameters such as pre-treatment of substrate, plasma intensity, filament current, imput gas flow rate, gas composition, substrate temperature and different substrates on the growth characteristics of CNT were systematically investigated. Figure 1 shows SEM image of CNT grown on Ni coated glass substrate. Diameter of nanotube was 30 to 100nm depending on the growth condition. The diameter of CNT decreased and density of CNT increased as NH3 etching time etching time increased. Plasma intensity was found to be the most critical parameter to determine the growth of CNT. CNT was not grown at the plasma intensity lower than 500V. Growth of CNT without filament current was observed. Raman spectroscopy showed the C-C tangential stretching mode at 1592 cm1 as well as D line at 1366 cm-1. From the microanalysis using HRTEM, nickel cap was observed on the top of the grown CNT and very thin carbon amorphous layer of 5nm was found on the nickel cap. Current-voltage characteristics using STM showed about 34nA of current at the applied voltage of 1 volt. Electron emission from the vertically well aligned CNT was obtained using phosphor anode with onset electric field of 1.5C/um.

• 한국재료학회지
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• 제26권8호
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• pp.427-429
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• 2016

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.