• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1399-1401
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• 2009

In this article, we reported the results of etching polymonochloro-para-xylylene (parylene-C) thin films using inductively coupled plasma and $CF_4/O_2$ gas mixture. The $CF_4$ gas fraction increased up to the approximately 16 %, the polymer etch rate increased in the range of 277 - 373 nm/min. It confirmed that the etch rate of the parylene-C mainly depended on the O radical density in the plasma. Using a contact angle measurement, the contact angle increased with increasing the $CF_4$ fraction. Moreover, the contact angle was highly related a $CF_x$ functional group on parylene films.

• 전자공학회논문지A
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• 제31A권4호
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• pp.84-91
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• 1994

A compact electron cyclotron resonance(ECR) plasma system composed of a microwave generator and a magnet coil was fabricated. A Langmuir single probe was used to investigate the plasma characteristics of the system through I-V measurements. The performance of the compact ECR plasma system was tested for the case of silicon etching reaction with $CF_{4}/O_{2}$(30%) mixed gas. Electron density and etch rate increased to maximum values and then decreased with increasing argon gas pressure, but electron temperature changed in the opposite way. The electron density and the electron temperature of argon gas plasma were 0.85${\times}~5.5{\times}10^{10}cm^{-3}$ and 4.5~6.0 eV, respectively, in the pressure range from $3{\times}10^{4}$ to 0.05Torr. The etch rate reached a maximum value at the position of 2.5cm from the bottom of plasma cavity. Etch rate uniformity was $\pm$6% across 6cm wafer. Anisotropic index was 0.75 at 1.5${\times}10^{-4}$Torr.

• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.152-155
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• 2013

$TiO_2$ films were deposited on glass substrates with and without $O_2$ plasma etching by using the RF-magnetron sputtering method. We focused on the effect of surface structure on the photoinduced hydrophilic properties of $TiO_2$ films, fabricated on different surface conditions according to the presence or absence of the $O_2$ plasma treatment on glass substrates. The wettability and photoinduced hydrophilic properties of the $TiO_2$ films were investigated according to the changes in water contact angles under UV light irradiations with a very low intensity of 0.1 $mW/cm^2$. The photoinduced hydrophilic properties on the $TiO_2$ formed above the plasma treated glass were also superior to those on the $TiO_2$ formed above the bare glass. This enhanced $TiO_2$ film has been used practically for self cleaning and anti-fogging glasses.

• Transactions on Electrical and Electronic Materials
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• 제12권4호
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• pp.144-147
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• 2011

In this work, we present a study regarding the etching characteristics on titanium nitride (TiN) thin films using an inductively coupled plasma system. The TiN thin film was etched using a $N_2/BCl_3$/Ar plasma. The studied etching parameters were the gas mixing ratio, the radio frequency (RF) power, the direct current (DC)-bias voltages, and the process pressures. The baseline conditions were as follows: RF power = 500 W, DC-bias voltage = -150 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate and the selectivity of the TiN to the $SiO_2$ thin film were 62.38 nm/min and 5.7, respectively. The X-ray photoelectron spectroscopy results showed no accumulation of etching byproducts from the etched surface of the TiN thin film. Based on the experimental results, the etched TiN thin film was obtained by the chemical etching found in the reactive ion etching mechanism.

• 반도체디스플레이기술학회지
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• 제22권2호
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• pp.35-39
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• 2023

Silicon oxide thin films have been deposited by plasma-enhanced chemical vapor deposition in SiH4 and N2O plasma along the variation of the gas flow ratio. Optical emission spectroscopy was employed to monitor the plasma and ellipsometry was employed to obtain refractive index of the deposited thin film. The atomic ratio of Si, O, and N in the film was obtained using XPS depth profiling. Fourier Transform Infrared Spectroscopy was used to analyze structures of the films. RI decreased with the increase in N2O/SiH4 gas flow ratio. We noticed the increase in the Si-O-Si bond angles as the N2O/SiH4 gas flow ratio increased, according to the analysis of the Si-O-Si stretching peak between 950 and 1,150 cm-1 in the wavenumber. We observed a correlation between the optical emission intensity ratio of (ISi+ISiH)/IO. The OES intensity ratio is also related with the measured refractive index and chemical composition ratio of the deposited thin film. Therefore, we report the added value of OES data analysis from the plasma related to the thin film characteristics in the PECVD process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.160-160
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• 1999

To reduce the fouling of heat exchangers, the plasma polymerized films was coated on the heat exchangers, and an effect of plasma polymerized film on fouling of heat exchangers was investigated. Monomer and reactive gases were used as the precursors of plasma polymerization. Plasma polymerized films were deposited with process parameters of pressure, power, and ratio of gases. Plasma polymerized films could be served as functional layers of good wettability and high resistance to corrosion. Wettability of plasma polymerized film could be controlled by the ratio change gas mixture. Hydrophilicity of plasma polymerized films on heat exchanger in air conditioner can provide improvement in performance of heat exchanger which results from good water drainage, decrease of pressure drop. DC-plasma polymerized films improve resistance to corrosion whcih is related to deposit formation in heat exchangers. The difference in the build up of fouling deposits between bare substrate and plasma polymerized substrate was investigated by scanning electron microscopy (SEM). An effect of plasma polymerized film on fouling of heat exchangers was discussed in terms of surface properties such as wettability, surface chemical state.

• Bulletin of the Korean Chemical Society
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• 제30권11호
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• pp.2589-2594
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• 2009

Aging phenomena of plasma polymer films were studied by using the surface analysis techniques of contact angle measurement, X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (TOFSIMS), and atomic force microscopy (AFM). The polymer films were grown on an aluminum substrate by using a plasma polymerization method from a gas mixture of acetylene and helium, and the films were subsequently modified to have a hydrophilic surface by oxygen plasma treatment. Aging of the polymer films was examined by exposing the samples to water and air environments. The aging process increased the hydrophobicity of the surface, as revealed by an increase in the advancing contact angle of water. XPS analysis showed that the population of oxygen-containing polar groups increased due to the uptake of oxygen during the aging, whereas TOF-SIMS analysis revealed a decrease in the polar group population in the uppermost surface layer. The results suggest that the change in surface property from hydrophilic to hydrophobic nature results from the restructuring of polymer chains near the surface, rather than compositional change of the surface. Oxidative degradation may enhance the mobility and the restructuring process of polymer chains.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.18-20
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• 2006

The panels were fabricated to characterize the contamination of Magnesium Oxide (MgO) thin films by phosphors and ion bombardments in AC-PDPs. Forty-six inch WVGA panels of the surface and vertical discharge type were manufactured. The experiment was designed to investigate the relationship between the MgO thin films and phosphor contamination caused by ion bombardments in a plasma environment to produce a life time test. The contamination of MgO thin films by phosphors was investigated by way of X-ray photoelectron spectroscopy (XPS).

• 전력전자학회:학술대회논문집
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• 전력전자학회 2012년도 전력전자학술대회 논문집
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• pp.117-119
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• 2012

Plasma Water Treatment, a Unique System(PLATUS) of algae(Chl-a) removal efficiency is average 90.6 up to 99.6%, It is cost effective facility because it doesn't need any other chemicals and consumables. Also, It is Eco-friendly installation with no sludge. It is easy to transform its treatment capacity by the number of Plasma installation. As it requires small space for installing, It can be installed in Land nearby water, vehicle mounted, and set on the ship.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.384.2-384.2
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• 2014

We investigated the electrical and structural properties of chemical vapor deposition (CVD)-grown graphene and post treated by O2 plasma. For the patterning of graphene, the plasma technology is generally used and essential for etching of graphene. But, the cautious O2 plasma treatments are required to avoid the damage in graphene edge which can be the harmful effects on the device performance. To analyze the effects of plasma treatment on structural properties of graphene, the change of surface morphology of graphene are measured by scanning electron microscope and atomic force microscope before and after plasma treatment. In addition, the binding energy of carbon and oxygen are measured through to X-ray photoelectron spectroscopy. After plasma treatment, the severe changes of surface morphology and binding energy of carbon and oxygen were observed which effects on the change of sheet resistance. Finally, to analyze of graphene characteristics, we measured the Raman spectroscopy. The measured results showed that the plasma treatment makes the upward of D-peak and downward of G'-peak by elevated power of plasma.