• Journal of the Korean Society for Heat Treatment
• /
• v.24 no.1
• /
• pp.3-9
• /
• 2011

Plasma nitriding of stainless steels has been investigated over a range of temperature from 400 to $500^{\circ}C$ and time from 10 to 20 hours. Characterization of systematic materials was carried out in terms of mechanical properties and corrosion behaviors. The results showed that plasma nitriding conducted at low temperatures not only increased the surface hardness, but also improved the corrosion resistance of STS 316L, STS409L, and STS 420J2. It was found that plasma-nitriding treatment at $500^{\circ}C$ resulted in increasing the corrosion performance of STS 409L and STS 420J2, while STS 316L was observed with server and massive damage on surface due to the formation of CrN.

• Journal of the Korean institute of surface engineering
• /
• v.50 no.6
• /
• pp.504-509
• /
• 2017

In order to improve corrosion resistance for cast stainless steel in seawater, the characteristics of corrosion resistance after plasma ion nitriding was investigated. Plasma ion nitriding process was conducted in a mixture of nitrogen of 25% and hydrogen of 75% at substrate temperature ranging from 350 to $500^{\circ}C$ for 10 hours using pulsed-DC glow discharge plasma with working pressure of 250 Pa in vacuum condition. Corrosion tests were carried out for as-received and plasma ion nitrided specimens. The corrosion characteristics were investigated by measurement of weight loss and observation of surface morphology. In anodic polarization experiment, relatively less damage depth and weight loss were presented at a nitrided temperature of $400^{\circ}C$, attributing to the formation of S-phase.

• Journal of Embryo Transfer
• /
• v.28 no.2
• /
• pp.87-93
• /
• 2013

The efficiency of artificial insemination (AI) for horses remains unsatisfactory. It is mainly because each process of AI causes a detrimental effect on semen quality. To sustain quality of semen properly, several factors including libido of stallions and sperm damage during sperm processing and preservation should be considered. Stallions with decent libido produce a high ratio of sperm to seminal plasma in their ejaculates, which is the ideal semen composition for maintaining sperm quality. Thus, to maximize the fertility rate upon AI, stallions should be appropriately managed to enhance their libido. Seminal plasma should have a positive effect on horse fertility in the case of natural breeding, whereas the effects of seminal plasma on both sperm viability and quality in the context of AI remain controversial. Centrifugation of semen is performed during semen processing to remove seminal plasma and to isolate fine quality sperm from semen. However, the centrifugation process can also result in sperm loss and damage. To solve this problem, several different centrifugation techniques such as Cushion Fluid along with dual and single Androcoll-E$^{TM}$ were developed to minimize loss of sperm and to damage at the bottom of the pellet. Most recently, a new technique without centrifugation was developed with the purpose of separating sperm from semen. AI techniques have been advanced to deliver sperm to optimal region of female reproductive tract at perfect timing. Recombinant equine luteinizing hormone (reLH) and low dose insemination techniques have been developed to maximize both fertility rate and the efficiency of AI. Horse breeders should consider that the entire AI procedure should be optimized for each stallion due to variation in individual horses for a uniformed AI protocol.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.21-25
• /
• 2001

In this study, recovery of plasma etching· damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of $Cl_2/CF_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450 $\AA$/min at 30% additive Ar into $(Cl_2(80%)+CF_4 (20%))$ and 1100 $\AA$/min at 10% additive $O_2$ into $C(Cl_2(80%)+CF_4(20%))$. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of $Ti_xO_y$ is recovered by $O_2$ recombination during rapid thermal annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.21-25
• /
• 2001

In this study, recovery of plasma etching damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of Cl$_2$/CF$_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450$\AA$/min at 30% additive Ar into (Cl$_2$(80%)+CF$_4$ (20%)) and 1100$\AA$/min at 10% additive $O_2$ into C(Cl$_2$(80%)+CF$_4$ (20%)). In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of Ti$_{x}$O$_{y}$ is recovered by $O_2$ recombination during rapid thermal annealing process.s.s.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1997.07a
• /
• pp.186-189
• /
• 1997

• Food Industry And Nutrition
• /
• v.8 no.1
• /
• pp.8-14
• /
• 2003

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.22 no.3
• /
• pp.529-539
• /
• 1998

A quantitative study of impact damage of ${Al_2}}O_3}-TiO_2$ plasma coated soda-lime glasses was carried out and compared with that of the uncoated smooth glass specimen. The shape of cracks by the impact of steel ball was observed by stereo-microscope and the decrease of the bending strength due to the impact of steel ball was measured through the 4-point bending test. At the low velocity, cone cracks were occurred. As the impact velocity increases, initial lateral cracks were propagated on the slanting surface of a cone crack, and radial cracks were generated at the crushed site. When the impact velocity of steel ball exceeds the critical velocity, the contact site of specimen was crushed due to plastic deformation and then radial and lateral cracks were largely grown. Crack length of coated specimens was smaller than that of uncoated smooth specimen due to the effect of coating layer on the substrate surface. According to impact velocity, the bending strength of coated specimens had no significant difference, compared with that of the uncoated smooth specimen. But this represents that the bending strength of coated specimens was increased, considering the effect of sand blasting damage which was performed to increase the adhesion force of coating layer.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.203-203
• /
• 2014

Due to the electrical properties such as narrow bandgap and high carrier mobility, indium antimonide (InSb) has attracted a lot of attention recently. For the fabrication of electronic or photonic devices, an etching process is required. However, during etching process, enegetic ions can induce structural damages on the bombarded surface. Especially, InSb has a very weak binding energy between In atom and Sb stom, it can be easily damaged by impingement of ions. In the previous work, to evaluate the surface properties after Ar ion beam etching, the plasma-induced structural damage on the etched InSb(100) surface had been examined by resonant Raman spectroscopy. As a result, we demonstrated the relation between the enhanced transverse optical(TO) peak in the Raman spectrum and the ion-induced structral damage near the InSb surface. In this work, the annealing effect on the etched InSb(100) surface has investigated. Annealing process was performed at $450^{\circ}C$ for 10 minute under antimony ambient. As-etched InSb(100) surface had shown a strongly enhanced TO scattering intensity in the Raman spectrum. However, the annealing process with antimony flowing caused the intensity to recover due to the structural reordering and the reduction of antimony vacancies. It proves that the origin of enhanced TO scattering is Sb vacancies. Furthermore, it shows that etching-induced damage can be cured effectively by the following annealing process under Sb ambient.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.384.2-384.2
• /
• 2014

We investigated the electrical and structural properties of chemical vapor deposition (CVD)-grown graphene and post treated by O2 plasma. For the patterning of graphene, the plasma technology is generally used and essential for etching of graphene. But, the cautious O2 plasma treatments are required to avoid the damage in graphene edge which can be the harmful effects on the device performance. To analyze the effects of plasma treatment on structural properties of graphene, the change of surface morphology of graphene are measured by scanning electron microscope and atomic force microscope before and after plasma treatment. In addition, the binding energy of carbon and oxygen are measured through to X-ray photoelectron spectroscopy. After plasma treatment, the severe changes of surface morphology and binding energy of carbon and oxygen were observed which effects on the change of sheet resistance. Finally, to analyze of graphene characteristics, we measured the Raman spectroscopy. The measured results showed that the plasma treatment makes the upward of D-peak and downward of G'-peak by elevated power of plasma.