• Title/Summary/Keyword: plasma components

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Model-Based Analysis of the $ZrO_2$ Etching Mechanism in Inductively Coupled $BCl_3$/Ar and $BCl_3/CHF_3$/Ar Plasmas

  • Kim, Man-Su;Min, Nam-Ki;Yun, Sun-Jin;Lee, Hyun-Woo;Efremov, Alexander M.;Kwon, Kwang-Ho
    • ETRI Journal
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    • v.30 no.3
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    • pp.383-393
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    • 2008
  • The etching mechanism of $ZrO_2$ thin films and etch selectivity over some materials in both $BCl_3$/Ar and $BCl_3/CHF_3$/Ar plasmas are investigated using a combination of experimental and modeling methods. To obtain the data on plasma composition and fluxes of active species, global (0-dimensional) plasma models are developed with Langmuir probe diagnostics data. In $BCl_3$/Ar plasma, changes in gas mixing ratio result in non-linear changes of both densities and fluxes for Cl, $BCl_2$, and ${BCl_2}^+$. In this work, it is shown that the non-monotonic behavior of the $ZrO_2$ etch rate as a function of the $BCl_3$/Ar mixing ratio could be related to the ion-assisted etch mechanism and the ion-flux-limited etch regime. The addition of up to 33% $CHF_3$ to the $BCl_3$-rich $BCl_3$Ar plasma does not influence the $ZrO_2$ etch rate, but it non-monotonically changes the etch rates of both Si and $SiO_2$. The last effect can probably be associated with the corresponding behavior of the F atom density.

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A Study on Etching of $UO_2$, Co, and Mo Surface with R.F. Plasma Using $CF_4\;and\;O_2$

  • Kim Yong-Soo;Seo Yong-Dae
    • Nuclear Engineering and Technology
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    • v.35 no.6
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    • pp.507-514
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    • 2003
  • Recently dry decontamination/surface-cleaning technology using plasma etching has been focused in the nuclear industry. In this study, the applicability of this new dry processing technique are experimentally investigated by examining the etching reaction of $UO_2$, Co, and Mo in r.f. plasma with the etchant gas of $CF_4/O_2$ mixture. $UO_2$ is chosen as a representing material for uranium and TRU (TRans-Uranic) compounds while metallic Co and Mo are selected because they are the principal contaminants in the used metallic nuclear components such as valves and pipes made of stainless steel or inconel. Results show that in all cases maximum etching rate is achieved when the mole fraction of $UO_2\;in\;CF_4/O_2$ mixture gas is $20\%$, regardless of temperature and r.f. power. In case of $UO_2$, the highest etching reaction rate is greater than 1000 monolayers/min. at $370^{\circ}C$ under 150 W r.f. power which is equivalent to $0.4{\mu}m/min$. As for Co, etching reaction begins to take place significantly when the temperature exceeds $350^{\circ}C$. Maximum etching rate achieved at $380^{\circ}C\;is\;0.06{\mu}m/min$. Mo etching reaction takes place vigorously even at relatively low temperature and the reaction rate increases drastically with increasing temperature. Highest etching rate at $380^{\circ}C\;is\;1.9{\mu}m/min$. According to OES (Optical Emission Spectroscopy) and AES (Auger Electron Spectroscopy) analysis, primary reaction seems to be a fluorination reaction, but carbonyl compound formation reaction may assist the dominant reaction, especially in case of Co and Mo. Through this basic study, the feasibility and the applicability of plasma decontamination technique are demonstrated.

A Study on Surface Etching of Metallic Co and Mo in R.F. Plasma (RF 플라즈마를 이용한 금속 코발트와 몰리브데늄의 표면 식각 연구)

  • 서용대;김용수;정종헌;오원진
    • Journal of Surface Science and Engineering
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    • v.34 no.1
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    • pp.10-16
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    • 2001
  • Recently plasma etching research has been focused on the metal surfaces in the nuclear industry. In this study, surface etching reaction of metallic Co and Mo, principal contaminants in the spent nuclear components, in CF$_4$/O$_2$, gas plasma has been experimentally investigated to look into the applicability and the effectiveness of the technique for the surface decontamination. Experimental variables are $CF_4$/$O_2$ ratio and substrate temperature between 29$0^{\circ}C$ and 38$0^{\circ}C$. Experimental results Show that the optimum gas composition is 80%CF$_4$-20%$O_2$ and the metallic Co and Mo are etched out well enough in the temperatures range. Cobalt starts to be etched above $350^{\circ}C$ and the etching rate increases with increasing substrate temperature. Maximum rate achieved at 38$0^{\circ}C$ under 220 W r.f. plasma power is 0.06 $\mu\textrm{m}$/min. On the other hand, the metallic Mo is etched easily even at low temperature and the reaction rate drastically increases as the substrate temperature goes up. Highest rate obtained under the same conditions is $1.9\mu\textrm{m}$/min. OES (Optical Emission Spectroscopy) analysis reveals that the intensities of F atom and CO molecule reach maximum at the optimum gas composition, which demonstrates that the principal reaction mechanism is fluorination and/or carbonyl reaction. It is confirmed, therefore, that dry processing technique using reactive plasma is quite feasible and applicable for the decontamination of surface-contaminated parts or equipments.

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A randomized study to establish the effects of spirulina in type 2 diabetes mellitus patients

  • Lee, Eun-Hee;Park, Ji-Eun;Choi, Young-Ju;Huh, Kap-Bum;Kim, Wha-Young
    • Nutrition Research and Practice
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    • v.2 no.4
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    • pp.295-300
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    • 2008
  • Spirulina is a microscopic and filamentous cyanobacterium that contains essential amino acids, essential fatty acids, vitamins, minerals and anti-oxidative components. The purpose of this study was to examine effects of spirulina intervention in Korean patients with type 2 diabetes. The subjects were 37 type 2 diabetic patients who visited a diabetic clinic in Seoul and randomly assigned into spirulina (8 g/day) or control group. During the intervention period of 12 weeks, subjects were asked to keep usual diet and prohibited to take any functional foods or dietary supplements. Spirulina supplementation for 12 weeks did not affect anthropometric parameters, however, lowered plasma triglycerides level significantly (p<0.05). Spirulina supplementation also resulted in a significant reduction in plasma malondialdehyde level (p<0.05) and an increase in plasma adiponectin level (p<0.1). The lipid lowering effect of spirulina supplementation was different according to serum lipid levels of the subjects before entering the intervention. The subjects with higher initial triglyceride level showed higher reduction in plasma triglyceride and blood pressure. The subjects with higher initial total cholesterol and LDL-cholesterol level showed higher reduction in plasma concentrations of total cholesterol, LDL-cholesterol, IL-6, and blood pressure. It seems that spirulina supplementation is more effective in subjects with dyslipidemia. This study provides the evidence for beneficial effects of spirulina supplementation on blood lipid profiles, inflammatory variables, and antioxidant capacity in Korean patients with type 2 diabetes. The results suggest that spirulina is a promising agent as a functional food for diabetes management.

Effects of Short Term Creatine Loading on Repeated Bouts of Kicking, Plasma Components and Anaerobic power in Taekwondo player (단기간의 크레아틴 섭취가 태권도 선수의 발차기 횟수, 혈장요소 및 무산소성 파워에 미치는 영향)

  • Lee Ho-Song
    • The Journal of the Korea Contents Association
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    • v.6 no.4
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    • pp.136-145
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    • 2006
  • The main purpose of the present study was to find the effect of short term creatine loading on repeated bouts of kicking, plasma creatine phosphokinase and anaerobic power in male taekwondo player from high school. Eighteen male were randomly assigned to two groups. They were tested before and after 6 days of placebo($4{\times}5$ glucose d-1, N=9) or Creatine monohydrate loading(consume 0.3g kg-1, N=9). Only creatine loading group were significantly increased of repeated bouts of kicking, plasma creatine phosphokinase and anaerobic power These results suggest that short creatine loading was effective diet protocol in taekwondo player from male high school.

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Minimization of Welding Defect in $CO_2$ Laser Welded Tube

  • Suh Jeong;Kang Hee-Shin;Lee Jae-Hoon;Park Kyoung-Taik;Lee Moon-Yong;Jung Byung-Hun
    • International Journal of Precision Engineering and Manufacturing
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    • v.6 no.3
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    • pp.19-23
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    • 2005
  • To minimize the weld defect in manufacturing of the welded tube by using $CO_2$ laser, the monitoring of the welding quality and the seam tracking along the butt-joint lengthwise to the tube axis are studied. The longitudinal butt-joint is shaped from $60kgf/mm^2$ grade steel sheet by 2 roll bending method, and welded by the $CO_2$ laser welding system equipped with the seam tracker and plasma sensor. The laser welded tube has the thickness of 1.5mm, diameter of 105.4mm and length of 2000mm. The precise positioning of the laser beam on the butt-joint to be assembled is obtained within $200{\mu}m$ by the laser vision sensor. The artificial defects in the butt-joint are well observed by the signal of plasma intensity measured from the plasma sensor of UV wavelength range within 400nm. The developed $CO_2$ laser tube welding system has the function of the precision seam tracking and the real-time monitoring of the welding quality. In conclusion, the laser welded tube can be used for manufacturing of automobile chassis and components after hydro-forming.

Adhesion and Recovery of Semiconductive Silicone Rubber by Oxygen Plasma Treatment (산소 플라즈마 처리된 반도전성 실리콘 고무의 회복현상 및 접착특성)

  • Lee, Ki-Taek;Hwang, Sun-Mook;Hong, Joo-Il;Seo, Yu-Jin;Hwang, Cheong-Ho;Huh, Chang-Su
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.147-148
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    • 2005
  • In this work, recovery of semiconductive silicone rubber on oxygen plasma treatment was investigated in terms of X-ray photoelectron spectroscopy(XPS). The adhesion characteristics of semiconductive-insulating interface layer of silicone rubber were studied by measuring the T-peel strengths. As a result, surface methyl groups is removed and an oxidized layer containing Si atoms bound to 3 or 4 oxygens appears. The surface is later covered by a very thin layer due to migration of low-molecular-weight components from the bulk, resulting in decreasing the degree of adhesion of the semiconductive-insulating interface layer of silicone rubber these results are probably due to reorientation of polar groups or migration of low-molecular-weight.

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Study on Characteristic of Methane Reforming and Production of Hydrogen using GlidArc Plasma (GlidArc 플라즈마를 이용한 메탄의 개질 특성 및 수소 생산에 관한 연구)

  • Kim, Seong-Cheon;Chun, Young-Nam
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.31 no.11
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    • pp.942-948
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    • 2007
  • Popular techniques for producing hydrogen by converting methane include steam reforming and catalyst reforming. However, these are high temperature and high pressure processes limited by equipment, cost and difficulty of operation. Low temperature plasma is projected to be a technique that can be used to produce high concentration hydrogen from methane. It is suitable for miniaturization and fur application in other technologies. In this research, the effect of changing each of the following variables was studied using an AC GlidArc system that was conceived by the research team: the gas components ratio, the gas flow rate, the catalyst reactor temperature and voltage. Results were obtained for methane and hydrogen yields and intermediate products. The system used in this research consisted of 3 electrodes and an AC power source. In this study, air was added fur the partial oxidation reaction of methane. The result showed that as the gas flow rate, the catalyst reactor temperature and the electric power increased, the methane conversion rate and the hydrogen concentration also increased. With $O_2/C$ ratio of 0.45, input flow rate of 4.9 l/min and power supply of 1 kW as the reference condition, the methane conversion rate, the high hydrogen selectivity and the reformer energy density were 69.2%, 32.6% and 35.2% respectively.

Production of Hydrogen from Methane Using a 3 Phase AC Glidarc Discharge (3상 교류 부채꼴 방전을 이용한 메탄으로부터 수소 생산)

  • Kim, Seong-Cheon;Chun, Young-Nam
    • Journal of Hydrogen and New Energy
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    • v.18 no.2
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    • pp.132-139
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    • 2007
  • Popular techniques for producing synthesis gas by converting methane include steam reforming and catalyst reforming. However, these are high temperature and high pressure processes limited by equipment, cost and difficulty of operation. Low temperature plasma is projected to be a technique that can be used to produce high concentration hydrogen from methane. It is suitable for miniaturization and for application in other technologies. In this research, the effect of changing each of the following variables was studied using an AC Glidarc system that was conceived by the research team: the gas components ratio, the gas flow rate, the catalyst reactor temperature and voltage. Glidarc plasma reformer was consisted of 3 electrodes and an AC power source. And air was added for the partial oxidation reaction of methane. The result showed that as the gas flow rate, the catalyst reactor temperature and the electric power increased, the methane conversion rate and the hydrogen concentration also increased. With $O_2/C$ ratio of 0.45, input flow rate of 4.9 l/min and power supply of 1 kW as the reference condition, the methane conversion rate, the high hydrogen selectivity and the reformer energy density were 69.2%, 36.2% and 35.2% respectively.

A study on the deposition of DLC thin films by using an FCVA technique (FCVA 방법에 의한 DLC 박막의 제작에 관한 연구)

  • Lee, Hae-Seung;Uhm, Hyun-Seok;Kim, Jong-Kuk;Choi, Byoung-Ryong;Park, Jin-Seok
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1379-1382
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    • 1997
  • Diamond-like carbon(DLC) thin films are produced by using a filtered cathodic vacuum arc(FCVA) deposition system. Different magnetic components, namely steering, focusing, and filtering plasma-optic systems, are used to achieve a stable arc plasma and to prevent the macroparticles from incorporating into the deposited films. Effects of magnetic fields on plasma behavior and film deposition are examined. The carbon ion energy is found to be varied by applying a negative (accelerating) substrate bias voltage. The deposition rate of DLC films is dependent upon magnetic field as well as substrate bias voltage and at a nominal deposition condition is about $2{\AA}/s$. The structural properties of DLC films, such as internal stress, relative fraction of tetrahedral($sp^3$) bonds, and surface roughness have also been characterized as a function of substrate bias voltages and partial gas($N_2$) pressures.

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