• 분석과학
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• 제13권3호
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• pp.309-314
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• 2000

리튬 용융염($LiC+Li_2O$) 내에 미량으로 존재하는 핵분열생성물을 유도결합 플라스마 원자방출분광기(ICP-AES)를 이용하여 분석하였다. 분석대상 원소 중 감도가 가장 좋은 파장을 선택해 이들 파장에서 리튬 500, 1,000, 2,000 mg/L에 따른 분광학적 간섭 여부를 확인한 결과, 분석원소중 0.1 mg/L 이하의 Y, Nd, Sr, La, Eu의 방출세기는 리튬의 농도가 2,000 mg/L까지 증가시켜도 분광학적 간섭을 받지 않은 반면, Mo, Ba, Ru, Pd, Rh, Zr, Ce는 10% 에서 50% 이상 분광학적 간섭과 매트릭스에 의한 스펙트럼 방해가 나타났다. 리튬 매질로부터 미량 금속원소들을 군분리하기 위하여 모의 용융염 용액을 조제해 암모니아수를 가한 후 분리하고 다시 산처리하여 얻은 용액을 ICP-AES로 회수율을 측정하였다. 분석원소 중 Ru, Y, Rh, Zr, Nd, Ce, La, Eu의 회수율은 90% 이상인 반면 Mo, Ba, Pd, Sr는 낮은 회수율을 보여주었으며, 가해준 암모니아수 양이 증가할수록 회수율이 증가하는 경향을 보였다.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1992년도 제15회 학술강연회초록집
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• pp.71-76
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• 1992

초고진공중에 있어서의 기계, 기기의 설계에 있어서 마찰의 제어는 가장 중요한 과제의 하나이다. 지금까지 그 마찰면의 윤활을 위해서는 고체 윤활제로서 Au, Ag 등 $MoS_2$ 피막이 많이 쓰여져 왔다. 또한 그것들의 피막 형성법으로서 Plasma Coating, Sputtering 및 Ion-Plating 등의 여러가지 피막형성법이 개발되어 왔다. 그러나 어느 경우도 형성된 $수\mum$의 피막의 마모에 의한 유한의 수명이 존재하고, 마찰게수의 면에서도 아직 충분하다고 말 할수 없는 것이 현상이다. 이것에 대하여 필자들은 우주에 있어서 사용을 목적으로 새로운 피막 형성법으로서 Tribo-Coating법을 개발하여 그 유효성을 나타내어 왔다. 본 연구에서는 초고진공중에 있어서 Tribo-Coating법에 의한 In막의 윤활 특성에 영향을 미치는 지배적 제인자의 역활을 밝히고져한다.

• 한국어병학회지
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• 제34권2호
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• pp.213-224
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• 2021

본 연구는 수온 15, 20 및 25℃에서 조피볼락(Sebastes schlegeli)을 점진적인 저산소 조건에 노출시켜 호흡 대사율이 표준대사율(SMR) 이하로 감소하는 산소포화도, S_crit를 평가하고, 수온별 S_crit 에 4시간 노출 후 혈액 성상의 변화를 조사하기 위하여 실시하였다. 수온 15, 20, 25℃에서 normoxic SMR은 각각 116.5±5.5, 188.6±4.2 및 237.4±6.8 mg O₂/kg/hr이었고, 호흡계수(Q₁₀)는 15-20℃ 구간에서는 2.62, 20-25℃에서는 1.58, 그리고 전 수온 범위의 15-25℃에서는 2.04였다. 수온 15, 20 및 25℃에서 S_crit는 각각 22.1±1.2, 30.6±1.5 및 41.9±1.4 %였다. 수온별 S_crit에 4시간 노출 후 혈액 Ht와 Hb 및 혈장 cortisol, glucose, 전해질(Na⁺, K⁺, Cl^-)과 삼투질 농도는 모든 수온에서 normoxic water의 대조구에 비하여 유의하게 높았다. 수온 15, 20, 25℃의 normoxic water에서는 Ht, Hb 및 혈장 glucose 농도는 15℃에 비하여 20℃와 25℃에서, 혈장 cortisol, 전해질 및 삼투질 농도는 25℃에서 유의하게 높았다. 수온별 S_crit의 저산소에 노출된 조피볼락은 수온이 높을수록 저산소에 의한 어체의 생리적 스트레스는 가중되는 것으로 나타났다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.68.1-68.1
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• 2012

The best part of graphene is - charge-carriers in it are mass less particles which move in near relativistic speeds. Comparing to other materials, electrons in graphene travel much faster - at speeds of $10^8cm/s$. A graphene sheet is pure enough to ensure that electrons can travel a fair distance before colliding. Electronic devices few nanometers long that would be able to transmit charge at breath taking speeds for a fraction of power compared to present day CMOS transistors. Many researches try to check a possibility to make it a perfect replacement for silicon based devices. Graphene has shown high potential to be used as interconnects in the field of high frequency electrical devices. With all those advantages of graphene, we demonstrate characteristics of electrical and optical properties of graphene such as the effect of graphene geometry on the microwave properties using the measurements of S-parameter in range of 500 MHz - 40 GHz at room temperature condition. We confirm that impedance and resistance decrease with increasing the number of graphene layer and w/L ratio. This result shows proper geometry of graphene to be used as high frequency interconnects. This study also presents the optical properties of graphene oxide (GO), which were deposited in different substrate, or influenced by oxygen plasma, were confirmed using different characterization techniques. 4-6 layers of the polycrystalline GO layers, which were confirmed by High resolution transmission electron microscopy (HRTEM) and electron diffraction analysis, were shown short range order of crystallization by the substrate as well as interlayer effect with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups on its layers. X-ray photoelectron Spectroscopy (XPS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation, and Fourier Transform Infrared spectroscopy (FTIR) and XPS analysis shows the changes in oxygen functional groups with nature of substrate. Moreover, the photoluminescent (PL) peak emission wavelength varies with substrate and the broad energy level distribution produces excitation dependent PL emission in a broad wavelength ranging from 400 to 650 nm. The structural and optical properties of oxygen plasma treated GO films for possible optoelectronic applications were also investigated using various characterization techniques. HRTEM and electron diffraction analysis confirmed that the oxygen plasma treatment results short range order crystallization in GO films with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups. In addition, Electron energy loss spectroscopy (EELS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation and XPS analysis shows that epoxy pairs convert to more stable C=O and O-C=O groups with oxygen plasma treatment. The broad energy level distribution resulting from the broad size distribution of the $sp^2$ clusters produces excitation dependent PL emission in a broad wavelength range from 400 to 650 nm. Our results suggest that substrate influenced, or oxygen treatment GO has higher potential for future optoelectronic devices by its various optical properties and visible PL emission.

• 한국전기전자재료학회논문지
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• 제27권9호
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• pp.561-565
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• 2014

Thermoelectric materials have been the topic of intensive research due to their unique dual capability of directly converting heat into electricity or electrical power into cooling or heating. Bismuth telluride ($Bi_2Te_3$) is the best-known commercially used thermoelectric material in the bulk form for cooling and power generation applications In this work we focus on the large scale synthesis of nanostructured undoped bulk nanostructured $Bi_2Te_3$ materials by employing a novel bottom-up solution-based chemical approach. Spark plasma sintering has been employed for compaction and sintering of $Bi_2Te_3$ nanopowders, resulting in relative density of $g{\cdot}cm^{-3}$ while preserving the nanostructure. The average grain size of the final compacts was obtained as 200 nm after sintering. An improved NS bulk undoped $Bi_2Te_3$ is achieved with sintered at $400^{\circ}C$ for 4 min holding time.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.185-185
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• 2000

플라즈마 연구 및 응용에서 플라즈마를 구성하는 이온에 대한 정보를 얻는 것은 중요하다. 특히 플라즈마 진단, 박막 증착, 플라즈마 코팅, 플라즈마 이온주입 등과 같은 플라즈마 프로세싱에서 이온들의 종류 구성비율 및 분포는 매우 중요하다. 질량분석기는 대개 큰 규모로 복잡하고 값비싼 경향이 있다. 플라즈마 교란을 최소화하면서 충분한 질량분해능을 갖고 국소적으로 이온들을 분석할 수 있는 간단하고 작은 규모의 값싼 질량분석기가 필요하다. 본 연구에서는 플라즈마 내에 존재하는 이온을 분석하기 위하여 간단하고 작은 규모의 값싼 프라즈마 이온 질량분석기를 설계, 제작하였다. 이온 질량분석기는 ion extraction part, double focusing sector magnet, ion collector로 구성되어 있다. 플라즈마에 잠기는 ion extraction part의 외부 전극에 Al2O3를 코팅하여 플라즈마 교란을 최소화하였다. 이온들의 공간적 분포를 측정하기 쉽게 하기 위하여 ion extraction part를 이동하여도 질량여과기를 통과한 후에 접속되는 초점의 위치가 Faraday ion collector 에 고정되도록 ion optical system을 설계하였다. Extracting electrode에 의하여 가속된 이온들이 sector magnet에 들어갈 때 평행이 되게 하기 위하여 여러 개의 미세구조를 갖는 Mo grids를 사용하고 immersion lens를 넣어서 이온 광학 시스템을 구성하였다. extraction electrode와 sector magnet 사이에 보조 electrode를 하나 더 넣어서 extracting electrode와 보조 electrode 사이에 immersion lens를 만들었다. 질량여과기로는 permanent magnet sector와 time-varying electrical field를 결합하여 사용하였다. Extracting electrode에 1kV 정도의 전압을 인가하여 이온들을 가속시키고 sector magnet에 톱니파 형태의 전압을 인가하여 mass spectrum을 얻었다. 이온 질량분석기를 플라즈마 장치에 적용하여 질량분해능 등의 특성을 연구하였다. Hot cathode discharge와 inductively coupled RF discharge에서 발생된 질소 플라즈마를 구성하는 이온들의 종류와 그 구성비율을 연구하였다.

• 센서학회지
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• 제6권6호
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• pp.483-490
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• 1997

Thin film Si has been used in sensors, radiation detectors, and solar cells. The carrier mobility of thin film Si influences the device behavior through its frequency response or time response. Since poly-Si shows the higher mobility value, a-Si:H films on Mo substrate were subjected to various crystallization treatments. Consequently, we need to find an appropriate method in mobility measurement before and after the anneal treatment. This paper investigates the carrier mobility improvement with anneal treatments and summarizes the mobility measurement methods of the a-Si:H and poly-Si film. Various techniques were investigated for the mobility determination such as Hall mobility, HS, TOF, SCLC, TFT, and TCO method. We learned that TFT and TCO method are suitable for the mobility determination of a-Si:H and poly-Si film. The measured mobility was improved by $2{\sim}3$ orders after high temperature anneal above $700^{\circ}C$ and grain boundary passivation using an RF plasma rehydrogenation.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.124-124
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• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• 대한수의학회지
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• 제31권1호
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• pp.89-97
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• 1991

For the ultrastructural observation on Babesia gibsoni(B gibsoni), the protozoa were challenged experimentally to splectomized dog. To examine the ultrastructure of the B gibsoni in the erythrocyte, the infected erythrocytes were collected at the cephalic or jugular vein of the dog. The results obtained by TEM(transmission electron microscopy) were as follows; 1. The sizes of protozoa in erythrocytes are $0.92{\pm}0.36{\mu}m{\times}0.67{\pm}0.21{\mu}m$, the sizes of nucleus of the protozoa are $0.55{\pm}0.24{\mu}m{\times}0.38{\pm}0.26{\mu}m$, and sizes of rhoptries in plasma of the protozoa are $0.33{\pm}0.05{\mu}m{\times}0.25{\pm}0.07{\mu}m$, respectively. 2. The tropozoite membrane in the erythrocyte was one, and it's nuclear membrane was made up of double. But the protozoa of initial stage in infected erythrocyte had double clear mambranes, and distinguished from plasma membrane of red blood cell. 3. The mitochondrialike structures covered with two membranes were observed in the protozoa. 4. Mitochondria and vesicles of the reticulocyte were observed near protozoa in the erythrocyte. 5. There are rhoptry, coiled structure and single nucleous in the merozoite. 6. The shape of rhoptry was round or ovoid form and in occasionally, the content of rhoptry was lost partially. 7. There was able to observe the dividing process of the protozoa. 8. Maurer's cleft-like structure was observed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.145-148
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• 2007

The authors report on the fabrication of thin film transistors (TFTs) that use amorphous indium-gallium-zinc oxide (a-IGZO) channel and have the channel length (L) and width (W) patterned by dry etching. To prevent the plasma damage of active channel, a 100-nm-thckness $SiO_{x}$ by PECVD was adopted as an etch-stopper structure. IGZO TFT (W/L=10/50${\mu}m$) fabricated on glass exhibited the high performance mobility of $35.8\;cm^2/Vs$, a subthreshold gate voltage swing of $0.59V/dec$, and $I_{on/off}$ of $4.9{\times}10^6$. In addition, 4.1” transparent QCIF active-matrix organic light-emitting diode display were successfully fabricated, which was driven by a-IGZO TFTs.