• Journal of the Korean Society of Manufacturing Process Engineers
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• v.17 no.6
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• pp.91-97
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• 2018

Chemical mechanical polishing(CMP) realizes a surface planarity through combined mechanical and chemical means. In CMP process, Preston equation is known as one of the most general approximation of the removal rate. Effects of pressure and relative speed on the mechanical property of Cu CMP has been investigated. On the other hand, The amount of abrasion also increased with changes in pressure and speed, resulting in a proportional increase of temperature during CMP. Especially this temperature is an important factor to change chemical reaction in a Cu CMP. However, when the slurry temperature became higher than $70^{\circ}C$, the removal rate went lower due to abrasives aggregation and scratching occurred on the Cu film. Therefore, it was found that the slurry temperature should not exceed $70^{\circ}C$ during Cu CMP. Finally, authors could increase the pressure, speed and slurry temperature up to a ceratin level to improve the removal rate without surface defects.

• Transactions of Materials Processing
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• v.33 no.5
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• pp.322-329
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• 2024

Because a high strain rate suppresses cross slip and delays dynamic recovery in the alloys with a face-centered cubic (FCC) structure, it is generally accepted that the influence of strain rate on strain hardening rate and tensile strength is greater than that on the yield strength of FCC alloys. The present study examined the tensile behavior of an austenitic stainless steel exhibiting an FCC structure, and revealed that the increment in yield strength was greater than that in tensile strength as the strain rate increased from 5.21×10^-5s^-1 to 4.17×10^-1s^-1. This indicated that the strain hardening rate was reduced by increasing the strain rate, which was inconsistent with the conventional explanation. Adiabatic heating was detected at high strain rates from 5.21×10^-5s^-1, and the resulting temperature increase could elevate stacking fault energy. The tendency for sip planarity was investigated by applying the Ludwigson model to the tensile curves, which suggested that higher stacking fault energy due to adiabatic heating could accelerate cross slip and dynamic recovery, thereby reducing the strain hardening rate.

• Korean Institute of Interior Design Journal
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• v.23 no.2
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• pp.71-79
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• 2014

The purpose of this study is to elucidate that photo, which has been used as original photo's purpose of information transfer in modern age, is now used as romantic reproduction which is the communication methods of architect's idea and thought through photographic vision which is beyond photograph own capabilities. The photos of Mies van der Rohe and Le Corbusier's architectural works are taken as an example for studying and analysing the way of deliverying the concept of creative work in the functional spaces in the modern era. It looked at the way of modern archirecture configuration, which architects wanted to show by pictures, such as concurrency, movement, sense of exhibition and concept of time-space and planarity on photographic vision such as multiview, movement, daily life exclusion, scenography and perspective loss. Reflecting that, I presents Le Corbusier and Mies van der Rohe's intention through photo by analyzing their picture of architecture by way of photograph techniques-camera position moving, over exposure, photomontage, silhouette technic and overlap technic. Mies van der Rohe and Le corbusier demonstrated the change and manipulation of the their architectural photos in different point of view. They express their architectural theories by photos of their works and overcome the limitation of expression of constructed building designed by them. The photos of architects's works in the case study with photos and descriptions introduce to their design concept. The design concept of the architects have become ideal concept for many contemporary architects and keep reproducing through the photos of their architectural works.

• Journal of the Korea Fashion and Costume Design Association
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• v.20 no.1
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• pp.29-47
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• 2018

This study aims at looking into women's costume style seen in 18th century to 19th century, and reason out a major decoration, then the formative and aesthetic characteristics of the decoration were analyzed. Research results are same as follows. Firstly, the style of women's costumes in the 18th and 19th century includes the Rococo style, Polonaise style, Neo-classic style, Romantic style and Bustle-style. The main decorations shown in these styles are the gather pleats drape of Fold decoration, the flat embroidery quilting of embroidery decoration, and the ribbon braid fringe button feather and fur of attachment decoration. Secondly, the analyzed results found the formative and aesthetic characteristics of the decoration in the 18th and 19th century women's costumes. Fold decorations appeared as a voluminous property in the form of gown mantua jacket pelisse and dress. Especially, femininity and exaggeration were expressed through greatly inflated skirts. Embroidery decoration appeared as planarity by making patterns of gown mantua jacket stomacher overskirt coat dress shawl and dolman. Especially, exaggeration and extravagance were expressed through embroidered mantua surfaces with peony rose poppy primrose daffodil morning glory tulip leaf and lattice patterns in variety of colored silk threads. Attachment decorations were mixed with elements of heterogeneity added to jackets, coats, gowns, petticoats, stomachers, mantuas, pelisses, mantles, dolmans, capes, overskirts and dresses. In particular, exaggeration and extravagance strongly expressed through the decoration with white fox fur at the hemline, neckline and sleeves of cream colored silk dolman.

• Bulletin of the Korean Chemical Society
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• v.30 no.9
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• pp.2077-2082
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• 2009

The conformational and electronic properties of 2-cyano-3-(thiophen-2-yl)acrylic acid (TCA) in analogues used as sensitizers in dye-sensitized solar cells was examined using density functional theory (DFT) and natural bond orbital analysis methods. A relaxed potential energy surface scan was performed on NKX-2677 by rotating the C-C bond between the thiophene and cyanoacrylic acid which yielded activation energy barriers of about 13 kcal/mol for both E and Z configurations. The most stable conformation of all the analogues was E-180 except for NKX-2587 which has an electrostatic repulsion between the oxygen of the coumarin and the nitrogen of the cyanoacrylic acid. The increase in the electron delocalization between the thiophene and cyanoacrylic acid influences the stability for most of the analogues. But for NKX-2600, even though there was a greater deviation from the planarity of TCA, the stability was mainly due to the presence of a weak hydrogen bond between the hydrogen of the methyl group of the amine located in the donor moiety and the nitrogen of the cyanoacrylic acid. The vertical excitation energies of the analogues containing TCA were calculated by time-dependent DFT method. There were slight differences in its vertical excitation energies but the oscillator strengths vary significantly especially in the case of NKX-2600.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.58-58
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• 2009

Uniformity related issues in chemical mechanical polishing (CMP) are within wafer non-uniformity (WIWNU), wafer to wafer non-uniformity (WTWNU), planarity and dishing/erosion. Here, the WIWNU that originates from spatial distribution of independent variables such as temperature, sliding distance, down force and material removal rate (MRR) during CMP, relies to spatial dependency. Among various sources of spatial irregularity, hardness and modulus of pad and surface roughness in sources for pad uniformity are great, especially. So, we investigated the spatial variation of pad surface characteristics using pad measuring system (PMS) and roughness measuring system. Reduced peak height ($R_{pk}$) of roughness parameter shows a strong correlation with the removal rate, and the distribution of relative sliding distance onwafer during polishing has an effect on the variation of $R_{pk}$ and WIWNU. Also, the results of pad wear profile thorough developed pad profiler well coincides with the kinematical simulation of conditioning, and it can contribute for the enhancement of WIWNU in CMP process.

• Journal of Korean Society of Water and Wastewater
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• v.32 no.3
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• pp.279-289
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• 2018

N-nitrosodimethylamine (NDMA) is a class of disinfection byproducts and a frequently detected nitrosamine with carcinogenic potentials. This review summarizes NDMA precursors, their formation mechanisms in chloraminated water, and mitigation strategies. Understanding the formation mechanism and characteristics of precursors is essential for developing a mitigation strategy. Dimethylamine (DMA), the most widely studied NDMA precursor, has an NDMA molar yield up to 3%. In comparison, a subset of tertiary amines, e.g., pharmaceuticals, generate up to 90% upon chloramination. Potent NDMA precursors, are characterized by their negative partial charge, low planarity values and molecular weight, and high bond length and $pK_a$ values. A nucleophilic substitution of tertiary amine on chloramine is a key reason for the high NDMA yield from the most potent NDMA precursors. The distribution and fate of NDMA in surface water, aquifers, and its formation in the distribution system can be mitigated through two strategies: (1) degrading or/removing NDMA after its formation and (2) pre-treatment of its precursor's prior chloramination.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.5
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• pp.149-158
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• 2002

Recently, the minimum line width shows a tendency to decrease and the multi-level increases in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. However there are several defects in CMF, such as micro-scratches, abrasive contaminations and non-uniformity of polished wafer edges. Wet etching process including spin-etching can eliminate the defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(Interlayer-Dielectric) was removed by CMP and wet etching process using DHF(Diluted HF) in order to investigate the possibility of planrization by wet etching mechanism. In the thin film wafer, the results were evaluated from the viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And the pattern step heights were also compared for the purpose of planarity characterization of the patterned wafer. Moreover, Chemical polishing process which is the wet etching process with mechanical energy was introduced and evaluated for examining the characteristics of planarization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.31-34
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• 2000

It is very important to understand the correlation of between inter layer dielectric(ILD) CMP process and various facility factors supplied to equipment system. In this paper, the correlation between the various facility factors supplied to CMP equipment system and ILD CMP process were studied. To prevent the partial over-polishing(edge hot-spot) generated in the wafer edge area during polishing, we analyzed various facilities supplied at supply system. With facility shortage of D.I. water(DIW) pressure, we introduced an adding purified $N_2(PN_2)$ gas in polishing head cleaning station for increasing a cleaning effect. DIW pressure and PN2 gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. We estimated two factors (DIW pressure and PN2 gas) for the improvement of CMP process. Especially, we obtained a uniform planarity in patterned wafer and prohibited more than 90% wafer edge over-polishing. In this study, we acknowledged that facility factors supplied to equipment system played an important role in ILD-CMP process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.46-49
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• 2003

Chemical mechanical polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5% hydrogen peroxide such as $Fe(NO_3)_3$, $H_2O_2$, and $KIO_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of $Al_3O_3$ particles in presence of surfactant stabilizing the slurry.