• Journal of the Korean Ceramic Society
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• v.23 no.6
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• pp.52-58
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• 1986

$Pb(Zr_{0.525} Ti_{0.475})O_3$ piezoelectric ceramics both unmodified and doped with NiO were prepared by the conventional oxide techniques using sintering temperature from 900 to to 125$0^{\circ}C$. The difference in densification process between unmodified and NiO doped PZT ceramics was studied by shrinkage vs. firing temperatures and it was caused by increasing defect concentration in calcining process of NiO doped PZT ceramics. And nickel oxide solubility limit for $Pb(Zr_{0.525} Ti_{0.475})O_3$ ceramics is shown to be at the range from 0.2wt% to 0.5wt% from this defect model micro-structures dielectric and piezolectric properties of Nio doped PZT ceramics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.70-73
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• 1989

(1-x-y)Pb($Zn_{1/3}Nb_{2/3})O_3-Ba(Zn_{1/3}Nb_{2/3})O_3-PbTiO_3(0.12{\leq}x{\leq}0.21, 0.24{\leq}y{\leq}0.33$) ternary compound ceramics were fabricated by the mixed oxide method. The sintering temperature and time were 1050 [$^{\circ}C$], 2[hr]. Morphotropic phase boundary region was chosen for the composition. 0.55 PZN-0.21 BZN-0.24 PT specimen had the highest value of relative dielectric constants, 5353. The curie temperature of specimens were increased linearly with PT content. Near the morphotropic phase boundary, electro-mechanical coupoling factor and mechanical quality factor of the specimens had the highest values.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.838-842
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• 2006

0.03Pb$(Sb_{0.5}Nb_{0.5})O_{3}-0.03Pb(Mn{1/3}Nb{2/3)O_{3}-(0.94-x)PbTiO_{3}-xPbZrO_{3}$ ceramics doped with $CeO_{2}$ were synthesized by conventional bulk ceramic processing technique. Phases analysis, microstructures and piezoelectric properties were investigated as a function of $CeO_{2}$ content (0.03, 0.05, 0.1 0.3, 0.5 and 0.7 wt%). Microstructures and phases information were characterized using a scanning electron microscope (SEM) and an X-ray diffractometer (XRD). Mechanical quality factor ($Q_{m}$) and coupling factor(kp) were obtained from the resonance measurement method. Both $Q_{m}$ and $k_{p}$ were shown to reach to the maximum at 0.1 wt% $CeO_{2}$. In order to evaluate the stability of resonance frequency and effective electromechanical coupling factor ($K_{eff}$) as a function of $CeO_{2}$, the variation of resonance and anti-resonance frequency were also measured using a high voltage frequency response analyzer under various alternating electric fields from 10 V/mm to 80 V/mm. It was shown that the stability of resonance frequency and effective electromechanical coupling factor were increased with increasing the $CeO_{2}$ contents.

• The Korean Journal of Ceramics
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• v.6 no.4
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• pp.348-353
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• 2000

The effects of MnO$_2$ and Fe$_2$O$_3$ on the piezoelectric properties of 0.05PMN-0.451PT-0.499PZ ceramics were investigated. The addition of MnO$_2$ increased mechanical quality factor (Q$_m$) but decreased the dielectric constant (K$^{T}_{33}$) and compliance (S$^{E}_{11}$) of the specimens. These results indicated that MnO$_2$ behaves as an acceptor in 0.05MN-0.451PT-0.499PZ ceramics. The electromecanical coupling coefficient (K$_P$) of 0.05PMN-0.451PT-0.499PZ ceramics slightly increased with the addition of MnO$_2$ however, the enhancement of $K_P$ was insignificant. A small amount of Fe$_2$O$_3$ was added to enhance the $K_P$ of the 0.05PMN-0.451PT-0.499PZ + 0.5 wt% MnO$_2$ ceramics. The addition of Fe$_2$O$_3$ largely increased $K_P$ through the increase of the K$^{T}_{33}$ and the polarization. The mechanical quality factor of the specimens decreased with the addition of Fe$_2$O$_3$however, the reduction was negligible.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.72-75
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• 2011

In this study, $(K_{0.5}Na_{0.5})(Nb_{0.97}Sb_{0.03})O_3+0.9$ mol% $K_{5.4}Cu_{1.3}Ta_{10}O_{29}+x$ mol% $K_4CuNb_8O_{23}$ (x = 0, 0.2, 0.6, 0.8) ceramics were prepared by a conventional mixed oxide method. Their microstructure and electric properties were investigated. The secondary phase was made by virtue of $K_4CuNb_8O_{23}$ (KCN) addition in the $(K_{0.5}Na_{0.5})(Nb_{0.97}Sb_{0.03})O_3$ system ceramics. However, the sinterability of the ceramics increased with increasing $K_4CuNb_8O_{23}$ content. At the 0.6 mol% $K_4CuNb_8O_{23}$ added composition ceramics sintered at $1,060^{\circ}C$, kp and $d_{33}$ showed the optimum values of 0.39 and 145 pC/N, respectively, suitable for piezoelectric actuator application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.627-631
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• 2011

[ $[Li_{0.04}(Na_{0.54}K_{0.46})_{0.96}](Nb_{1-0.04-X}TaxSb_{0.04})O_3$ ]lead-free piezoelectric ceramics have been prepared by normal sintering at $1,100^{\circ}C$ for 5 h. X-ray diffraction analysis indicated that specimens demonstrate orthorhombic symmetry when $Ta\leq5$ mol%. While transforming into tetragonal symmetry when $x\geq20$ mol%. These suggest that the orthorhombic and tetragonal phases co-exist in the ceramics with 5 mol% $cm^3$. As the result of SEM images, the grain growth was decreased with the increase of Ta substitution. The ceramics become 'softening', leading to improvements in $k_p$, $\varepsilon_r$ and $d_{33}$, but a decrease in $Q_m$. Excellent properties of $k_p$= 0.46, $d_{33}$= 293 pC/N, ${\varepsilon}_r$= 1,583 and Tc= $340^{\circ}C$ were obtained when Ta= 15 mol%.

• Electrical & Electronic Materials
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• v.5 no.2
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• pp.207-215
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• 1992

본 연구에서 xPb(A $l_{0.5}$N $b_{0.5}$) $O_{3}$-(1-x)Pb(Z $r_{0.52}$ $Ti_{o.48}$) $O_{3}$계의 조성변화에 따른 유전 및 압전특성에 관해 실험한 결과 다음과 같은 결론을 얻었다. PAN의 첨가량이 증가함에 따라 c축은 수축되고 a축은 팽창하여 tetragonality는 감소하였고 grain의 크기와 Curie온도 또한 PAN의 첨가량에 따라 감소하였으나 밀도와 유전상수는 PAN의 양이 5mol%까지 증가하다가 그 이상에서는 감소하는 경향을 보였다. PAN의 첨가량이 증가함에 따라 시편의 비저항은 증가하였고 Kp는 PAN의 양이 5mol%첨가시 60%로 최대치를 보였으나 Qm은 최소치를 나타내었다.다.

• Electrical & Electronic Materials
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• v.6 no.3
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• pp.207-213
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• 1993

Pb(Z $r_{0.54}$, $Ti_{0.46}$) $O_{3}$에 B $i_{2}$ $O_{3}$를 0.0wt%까지 첨가하여 미세구조, 유전, 압전, 성질에 미치는 영향을 고찰하였다. B $i_{2}$ $O_{3}$의 고용범위는 약 0.5~0.7wt%정도 이었고 B $i_{2}$ $O_{3}$ 첨가량이 증가함에 따라서 결정립의 크기가 감소하였다. B $i_{2}$ $O_{3}$첨가량이 증가함에 따라 고용한계까지는 $d_{33}$ , tan .delta., .xi.$_{r}$(분극후)값이 증가하였으며 Qm값과 밀도는 감소하였다. $K_{p}$ 값은 B $i^{3+}$ 가 P $b^{2+}$를 치환하므로 형성되는 Pb공공의 형성에 의해 자발분극이 증가됨에 따라 증가하였다.다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.433-438
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• 2024

Piezoelectric ceramics play an important role in various electronic applications. However, traditional ceramics are difficult to be used in some complicated structures, due to their low flexibility and high brittleness. To solve this problem, this study prepared and investigated ceramic/polymer composites that can utilize a good flexibility of polymers. Polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE) and 0.77(Bi_1/2Na_1/2)TiO₃-0.23SrTiO₃ (BNST23) ceramics were selected to fabricate the composites. Ceramic/polymer composites were prepared using various volume fractions of BNST23 ceramics. The distribution of piezoceramic particles in BNST23/PVDF-TrFE composites was investigated using optical microscopy (OM) and scanning electron microscopy (SEM). The dielectric and piezoelectric properties of the composites were significantly influenced by the volume fraction of the piezoelectric ceramics. As a result, the highest piezoelectric constant (d₃₃) of 56 pC/N was obtained in a composites with 70% volume fraction of BNST23 ceramics. Accordingly, it is expected that BNST23/PVDF-TrFE composites can be applied to various sensor applications.

• Journal of the Korean Ceramic Society
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• v.38 no.10
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• pp.942-947
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• 2001

Thickness dependence of orientation on piezoelectric and electrical properties was investigated by PZT (52/48) films by diol based sol-gel method. The thickness of each layer by spinning at one time was $0.2{\mu}m$ and crack-free films could be successfully deposited on 4 inches Pt/Ti/$SiO_2$/Si substrates by 0.5 mol solutions in the range from $0.2{\mu}m$ to $3.8{\mu}m$. Excellent P-E hysteresis curves were achieved, which were attributed to the well-densified PZT films and columnar grain without pores or any defects between interlayers. The (111) preferred orientation of films were shown in the range of thickness below $1{\mu}m$. As the thickness increased, the (111) preferred orientation disappeared from $1{\mu}m$ to $3{\mu}m$ region, and the orientation of films became random above $3{\mu}m$. Dielectric constants and longitudinal piezoelectric coefficient, $d_{33}$, measured by pneumatic method were saturated around the value of about 1400 and 300 pC/N respectively above the thickness of $1{\mu}m$.