• 한국전기전자재료학회논문지
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• 제29권5호
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• pp.294-297
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• 2016

Titanium oxide ($TiO_2$) thin films were fabricated by unbalanced magnetron (UBM) sputtering. The fabricated $TiO_2$ films were treated by oxygen plasma under various RF powers. We investigated the characteristics of oxygen plasma treatment on the surface, structural, and physical properties of $TiO_2$ films prepared at various plasma treatment RF powers. UBM sputtered $TiO_2$ films exhibited higher contact angle value, smooth surface, and amorphous structure. However, the rms surface roughness $TiO_2$ films were rough, and the contact angle value was decreased with the increase of the plasma treatment RF power Also, the hardness value of $TiO_2$ film as physical properties was slightly increased with the increase of the plasma treatment RF power. In the results, the performance of $TiO_2$ films for self cleaning critically depended on the with the plasma treatment RF power.

• 한국표면공학회지
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• 제40권2호
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• pp.59-62
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• 2007

Metal containing hydrogen free nanocrystalline structured carbon (Me:nc-C) films were synthesized by closed-field unbalanced magnetron sputtering system (CFUBM). The aim of this study was to determine the relationship between the microstructure and physical properties of Me:nc-C films as a function of the concentration of materials. The film structures were examined by x-ray photoelectron spectroscopy and high resolution transmission electron microscopy. The physical properties of the Me:nc-C films were evaluated by using a 4-point probe. The fraction of graphite clusters was found to be increased by containing titanium and the electrical resistivity decreased with increasing amount of containing.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1722-1724
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• 1996

Enhancing the electrical conductivity of the ultrathin organic films is one of the important factors for the development of molecular electronic devices. The Langmuir-Blodgett(LB) technique has recently been attracted as out of the ways of deposition ultrathin films. We have studied manufacturing conditions and physical properties of Hexadecyl Dipyridinium-$(TCNQ^-)_2$ LB films made by Kuhn type apparatus. A ${\pi}-A$ isotherm shows that a limiting area is around $180{\AA}^2/molecule$ and a proper surface pressure for a deposition is around 22mN/m. A transfer ratio shows that Hexadecyl Dipyridinium-$(TCNQ^-)_2$ is able to be deposited as an Y-type. UV /visible absorption spectra shows that TCNQ dimer peak is apeared at about 600nm in LB films. In solution, $TCNQ^-$ peak is observed at about 400nm and charge transfer band at $830{\sim}900nm$. A horizontal conductivity of the Hexadecyl Dipyridinium-$(TCNQ^-)_2$ LB film is about $10^{-7}(S/cm)$.

• 전기학회논문지
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• 제66권11호
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• pp.1600-1604
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• 2017

Mo-Cu alloys have been widely used for heat sink materials, vacuum technology, automobile and many other applications due to their excellent physical and electronic properties. Especially, Mo-Cu composites with 5~20 wt% copper are widely used for the heavy duty service contacts due to their excellent properties like low coefficient of thermal expansion, wear resistance, high temperature strength and prominent electrical and thermal conductivity. In most of the applications, high dense Mo-Cu materials with homogeneous microstructure are required for high performance, which has led in turn to attempts to prepare ultra-fine and well-dispersed Mo-Cu powders in different ways, such as spray drying and reduction process, electroless plating technique, mechanical alloying process and gelatification-reduction process. However, most of these methods were accomplished at high temperature (typically degree), resulting in undesirable growth of large Cu phases; furthermore, these methods usually require complicated experimental facilities and procedure. In this study, Mo-Cu alloying were prepared by planetary ball milling (PBM) and spark plasma sintering (SPS) and the effect of Cu with contents of 5~20 wt% on the microstructure and properties of Mo-Cu alloy has been investigated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.128-129
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• 2007

We fabricated seeded $SrBi_2Ta_2O_9$(SBT) thin films using seeding technique on the $LaZrO_x$ (LZO)/Si structure. To evaluate the ferroelectric properties of seeded SBT thin films, we investigated the crystalline phase, the surface morphology, the capacitance-voltage (C-V) curve and the current density-voltage (J-V) curve of seeded films and then compared with the physical and electrical properties of unseeded films. As the result of that, the characteristics of seeded and unseeded films have a slight difference. Therefore, the ferroelectric properties of seeded SBT thin films are not necessarily superior than unseeded films.

• Transactions on Electrical and Electronic Materials
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• 제10권3호
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• pp.97-101
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• 2009

The use of a filler material in epoxy composite materials is an essential condition for reducing the unit cost of production and reinforcing mechanical strength. However, the dielectric strength of insulators decreases rapidly due to interactions between the epoxy resin and filler particles. In contrast to existing composite materials, nano-composite materials have superior dielectric strength, mechanical strength, and enduring chemical properties due to an increase in the bond strength of the polymer and nano material, It is reported that nano-fillers provide new characteristics different from the properties of the polymer material. This study is to improve the insulation capability of epoxy resins used in the insulation of a power transformer apparatus and many electronic devices mold. To accomplish this, the additional amount of nano-$SiO_2$ to epoxy resin was changed and the epoxy/$SiO_2$ nano composite materials were made, and the fundamental electrical properties were investigated using a physical properties and an analysis breakdown test. Using allowable breakdown probability, the optimum breakdown strength for designing an electrical apparatus was determined. The results found that the electrical characteristics of the nano-$SiO_2$ content specimens were superior to the virgin specimens. The 0.4 wt% specimens showed the highest electrical properties among the specimens examined with an allowable breakdown probability of 20 %, which indicates stable breakdown strength in insulating machinery design.

• E2M - 전기 전자와 첨단 소재
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• 제10권8호
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• pp.756-762
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• 1997

In this paper the change of electrical properties of transformer oil due to electron beam irradiation is investigated. The specimens are produced with a some different dose of 0.5[Mrad], 1[Mrad] and 2[Mard] except for original specimen. The physical properties of each specimen is analyzed by using the FT-IR spectrum. So it is confirmed that carbonyl groups are increased according to the increase of electron beam dose and also that the nitric compounds are disappeared. The magnitude of dielectric dissipation factor appears maximum value by the contribution of dipoles and ions in the low temperature low voltage region and it is stable due to the saturation of carriers in the high temperature high voltage region in the electric conduction characteristics. Volume resistivity is also measured one of original specimen is larger than irradiated specimen.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1314-1316
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• 1994

$0.36[wtx]Sio_2$ and $0.1[wtx]H_3BO_3$ were added to strontium ferrite magnets of the magnetoplumbite phase SrO $5.7Fe_2O_3$. This experiment was carried out to investigate the effects of particle size distribution as a function of milling time(20,30,40,50,60,70 hours) on the magnetic properties of SrO $5.7Fe_2O_3$ ferrite magnet. The B-H Curve, density and the degree of orientation were measured. The optimal conditions of making magnets and properties of a typical sample are the following : The milling time was 60 hours. Magnetic and physical properties are $B_r$=4000[G], $_BH_c$=3330[Oe], $_IH_c$=3525[Oe], (BH)max=3.786 [MGOe], density= $5.0063g/cm^2$, orientation factor f=0.813.

• 한국진공학회지
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• 제1권1호
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• pp.190-197
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• 1992

In this study we have investigated physical and electrical properties of high temperature oxide (HTO) thin film using dichlorosilane (DCS) gas. This film had low etch rate and excellent step coverage, and its characteristics of Si-O bond were similar to those of thermal oxide. I-V curves also showed similar electrical properties to those of thermally grown oxide (SiO2) while time dependent dielectric breakdown (TDDB) results revealed 1/4 value of thermal oxide. However, defect density was measured to be much lower value than that of thermal oxide.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.289-292
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• 1995

In this experiment the specimen is selected for epoxy resin used in the molding compound materials for the power semiconductors. The specimen was divided into the two parts. one is a specimen without irradiation, the other is irradiated with electron beam, of which dose is 1[Mrad], 2[Mrad], 4[Mrad], 8[Mrad] and 24[Mrad], respectively. From the analysis for the physical properties of the specimen, the carbonyl group which is asffact the electrical properties is decreased according to increase the dose of the electron beam. In the measurement of dielectric characteristics among the electrical properties, the frequency dependance of the dielectric characteristics is confirmed that its ${\beta}$-peak is represented by one peak due to attribute to the main chain below 50[$^{\circ}C$], and two peak above the temperature 100[$^{\circ}C$].