• Transactions on Electrical and Electronic Materials
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• v.7 no.5
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• pp.257-261
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• 2006

Nano-structured carbon nitride $(CN_x)$ films were prepared by reactive RF magnetron sputtering with a DC bias at various deposition conditions, and the physical and electrical properties were investigated. FTIR spectrum indicated an ${alpha}C_3N_4$ peak in the films. The carbon nitride film deposited on Si substrate had a nano-structured surface morphology. The grain size was about 20 nm and the deposition rate was $1.7{\mu}m/hr$. When the $N_2/Ar$ ratio was 3/7, the level of nitrogen incorporation was 34.3 at%. The film had a low dielectric constant. The metal-insulator-semiconductor (MIS) capacitors that the carbon nitride was deposited as insulators, exhibited a typical C-V characteristics.

• Elastomers and Composites
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• v.30 no.1
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• pp.9-19
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• 1995

To make filler loaded conducting rubber which has the excellent electronical and physical properties, CR and NBR were mixed with magnetite$(Fe_3O_4)$. From the result of the study, vulcanization characteristics shows the upgrading curve as increase in filler concentration and CR has more torque than NBR. When elongation be higher, modulus comes to decreases. Tear strength gradually decrease after showing of the maximum point when is in the 100phr in all. Resilience is not good to cause the increase in filler concentration. In the electrical properties, conductivity becomes smaller when filler concentration is increased. The increase of voltage makes an conductivity grown, but the changed rate is weak. The influence of temperature hardly changes on increasing temperature. The morphology and the distribution for a conductivity filler through SEM were better, the more filler concentration increase, the shorter the particle interval is.

• Korean Chemical Engineering Research
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• v.44 no.6
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• pp.602-608
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• 2006

Carbon fiber (CF) reinforced papers using polyacrylonitrile (PAN) based CF and wood pulp were prepared by varying the lengths and the concentrations of CF, and the basis weight of paper to investigate adhesive state between CF and pulp, and physical properties and electrical conductivity of the paper. The reinforcement was caused by physical entanglement and adhesion at the interface of the different fibers rather than by chemical bonds. The tear strength and the thickness of the paper increased as increasing the concentration of CF, while the tensile and the burst strength of the paper decreased. The improved dispersion of CF in the paper was obtained from mixing shorter CF, but the maximum electrical conductivity of the paper was gained from mixing 10 mm chopped CF. The electrical conductivity of the paper increased sharply from 2 wt％ to 8 wt％ of CF showing S-curve, and increased linearly as increasing the basis weight of the paper. Therefore, in order to improve the electrical conductivity and the physical property of the paper, the increase of basis weight of the paper is also important as the increase of CF content in the paper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.29-33
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• 2018

Using a vanadium dioxide ($VO_2$) source, highly pure and amorphous vanadium oxide (VO) thin films were deposited using an e-beam evaporator at room temperature and high vacuum (<$10^{-7}$ Torr). Then, by controlling the post-annealing conditions such as $N_2:O_2$ pressure ratio and annealing time, we could easily synthesize a homogeneous $VO_2$ thin film and also mixed-phase VO thin films, including $VO_2$, $V_2O_5$, $V_3O_7$, $V_5O_9$, and $V_6O_{13}$. The crystallinity and phase of these were characterized by X-ray diffraction, and the surface morphology by FE-SEM. Moreover, the electrical properties and ethanol sensing measurements of the VO thin films were analyzed as a function of temperature. In general, mixed-phases as a self-doping effect have enhanced electrical properties, with a high carrier density and an enhanced response to ethanol. In summary, we developed an easy, scalable, and reproducible fabrication process for VO thin films that is a promising candidate for many potential electrical and optical applications.

• Physical Therapy Korea
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• v.2 no.2
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• pp.85-97
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• 1995

When applying FES to patients, proper evaluation must be performed prior to treating patient. Patients with thoracic lesions between $T_4{\sim}T_{12}$ are suitable for FES. However, these patients must have excitability of the leg muscles. Thus, excitability testing is an essential part of the screening program(stimulation at 80V gives a response). Before standing or walking is attempted the patients must perform restrengthening exercise, so that the Quadriceps muscle group minimum strength is 40 Nm (corresponding to a manual grade of F+ to G). After that walking and standing can be attempted. The effects of FES are as follows: prevents pressure sores; development and maintenance of muscle properties; prevents disuse atrophy and contractures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.362-365
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• 2002

Hf thin films were deposited on bottom metal using a RF magnetron sputtering method followed by oxidation and annealing in O$_2$ and N$_2$ ambient, respectively. Various top metal electrodes (i.e., Al, Au, and Cu) were deposited by evaporation, and their roles on physical and electrical properties were investigated. Using the XRD, SEM and AFM techniques, we confirmed that the grain size of HfO$_2$ thin films enlarges as a function of oxidation temperature, increasing dielectric constant. However, other electrical properties (e.g., tan) deteriorateas a consequence. The dielectric constant and tan of HfO$_2$ thin films oxidized at 500 $^{\circ}C$ were 17-25 and 3${\times}$10-3 - 2x10-2, respectively, in the frequency range of 1 Hz to 1 MHz. The leakage current density was less than 1${\times}$10-8A/cm2 up to 0.7 MV/cm. In addition, electrical properties of HfO$_2$ thin films (e.g., the dielectric constant, leakage current and tan $\delta$) depend on top metal electrode. We showed that Al top metal electrode results in the best result.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.39-43
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• 2021

In the case of ZnO:Al thin films, it is the best material that can replace ITO that is mainly used as a transparent electrode in electronic devices such as solar cells and flat-panel displays. In this study, ZnO:Al films were fabricated by using the RF dual magnetron sputtering method at various substrate temperatures. As the substrate temperature increased, the crystallinity of the ZnO:Al thin films was improved, and the electrical conductivity and electrical properties of the thin film improved owing to the increase in grain size. In addition, the surface roughness of the ZnO:Al thin films increased due to changes in the surface and density of the thin films. Moreover, the substrate temperature increased the density of thin films and improved their transmittance. To be applied to solar cells and other several electronic devices in the future, the hardness and adhesion properties of the thin film improve as the substrate temperature increases.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.200-200
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• 2003

Polycrystalline Si(polysilicon) TFTs have opened a way for the next generation of display devices, due to their higher mobility of charge carriers relative to a-Si TFTs. The polysilicon W applications extend from the current Liquid Crystal Displays to the next generation Organic Light Emitting Diodes (OLED) displays. In particular, the OLED devices require a stricter control of properties of gate oxide layer, polysilicon layer, and their interface. The polysilicon layer is generally obtained by annealing thin film a-Si layer using techniques such as solid phase crystallization and excimer laser annealing. Typically laser-crystallized Si films have grain sizes of less than 1 micron, and their electrical/dielectric properties are strongly affected by the presence of grain boundaries. Impedance spectroscopy allows the frequency-dependent measurement of impedance and can be applied to inteface-controlled materials, resolving the respective contributions of grain boundaries, interfaces, and/or surface. Impedance spectroscopy was applied to laser-annealed Si thin films, using the electrodes which are designed specially for thin films. In order to understand the effect of grain size on physical properties, the amorphous Si was exposed to different laser energy densities, thereby varying the grain size of the resulting films. The microstructural characterization was carried out to accompany the electrical/dielectric properties obtained using the impedance spectroscopy, The correlation will be made between Si grain size and the corresponding electrical/dielectric properties. The ramifications will be discussed in conjunction with active-matrix thin film transistors for Active Matrix OLED.

• Advances in materials Research
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• v.6 no.1
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• pp.79-91
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• 2017

In the present work, a design of experiment (DOE) technique using Taguchi method, has been applied to optimize the properties of ODS tungsten heavy alloys(WHAs). In this work Taguchi method involves nine experiments groups for four processing parameters (compaction pressure, sintering temperature, binding material type, and oxide type) with three levels was implemented. The signal-to-noise (S/N) ratio and analysis of variance (ANOVA) were employed to obtain the optimal process parameter levels and to analyze the effect of these parameters on density, electrical conductivity, hardness and compressive strength values. The results showed that all the chosen factors have significant effects on all properties of ODS tungsten heavy alloys samples. The density, electrical conductivity and hardness increases with the increase in sintering temperature. The analysis of the verification experiments for the physical properties (density and Electrical conductivity) has shown that Taguchi parameter design can successfully verify the optimal parameters, where the difference between the predicted and the verified values of relative density and electrical conductivity is about 1.01% and 1.15% respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.516-521
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• 2016

Mo-Cu alloys have been widely used for heat sink materials, vacuum technology, automobile, and many other applications due to their excellent physical and electric properties. Especially, Mo-Cu composites with 5 ~ 20 wt.% copper are widely used for the heavy duty service contacts due to their excellent properties like low coefficient of thermal expansion, wear resistance, high temperature strength, and prominent electrical and thermal conductivity. In most of the applications, highly-dense Mo-Cu materials with homogeneous microstructure are required for better performance. In this study, Mo-Cu alloys were prepared by PBM (planetary ball milling) and SPS (spark plasma sintering). The effect of Cu with contents of 5~20 wt.% on the microstructure and thermal properties of Mo-Cu alloys was investigated.