• Title/Summary/Keyword: photovoltaic power system

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Annual Base Performance Evaluation on Cell Temperature and Power Generation of c-Si Transparent Spandrel BIPV Module depending on the Backside Insulation Level (스팬드럴용 투광형 결정계 BIPV창호의 후면단열 조건에 따른 연간 온도 및 발전성능 분석 연구)

  • Yoon, Jong-Ho;Oh, Myung-Hwan;Kang, Gi-Hwan;Lee, Jae-Bum
    • Journal of the Korean Solar Energy Society
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    • v.32 no.4
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    • pp.24-33
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    • 2012
  • Recently, finishing materials at spandrel area, a part of curtain-wall system, are gradually forced to improve thermal insulation performance in order to enhance the building energy efficiency. Also, Building Integrated Photovoltaics(BIPV) systems have been installed in the exterior side of the spandrel area, which is generally composed of windows. Those BIPVs aim to achieve high building energy efficiency and supply the electricity to building. However, if transparent BIPV module is combined with high insulated spandrel, it would reduce the PV efficiency for two major reasons. First, temperature in the air space, located between window layer and finishing layer of the spandrel area, can significantly increase by solar heat gain, because the space has a few air density relative to other spaces in building. Secondly, PV has a characteristics of decreased Voltage(Voc and Vmp) with the increased temperature on the PV cell. For these reasons, this research analyzed a direct interrelation between PV Cell temperature and electricity generation performance under different insulation conditions in the spandrel area. The different insulation conditions under consideration are 1) high insulated spandrel(HIS) 2) low insulated spandrel(LIS) 3) PV stand alone on the ground(SAG). As a result, in case of 1) HIS, PV temperature was increased and thus electricity generation efficiency was decreased more than other cases. To be specific, each cases' maximum temperature indicated that 1) HIS is $83.8^{\circ}C$, 2) LIS is $74.2^{\circ}C$, and 3) SAG is $66.3^{\circ}C$. Also, each cases yield electricity generation like that 1) HIS is 913.3kWh/kWp, 2) LIS is 942.8kWh/kWp, and 3) SAG is 981.3kWh/kWp. These result showed that it is needed for us to seek to the way how the PV Cell temperature would be decreased.

Properties of Indium Tin Oxide Thin Films According to Oxygen Flow Rates by γ-FIB System (γ-FIB 시스템을 이용한 산소 유량 변화에 따른 산화인듐주석 박막의 특성 연구)

  • Kim, D.H.;Son, C.H.;Yun, M.S.;Lee, K.A.;Jo, T.H.;Seo, I.W.;Uhm, H.S.;Kim, I.T.;Choi, E.H.;Cho, G.S.;Kwon, G.C.
    • Journal of the Korean Vacuum Society
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    • v.21 no.6
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    • pp.333-341
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    • 2012
  • Indium Tin Oxide (ITO) thin films were prepared by RF magnetron sputtering with different flow rates of $O_2$ gas from 0 to 12 sccm. Electrical and optical properties of these films were characterized and analyzed. ITO deposited on soda lime glass and RF power was 2 kW, frequency was 13.56 MHz, and working pressure was $1.0{\times}10^{-3}$ Torr, Ar gas was fixed at 1,000 sccm. The transmittance was measured at 300~1,100 nm ranges by using Photovoltaic analysis system. Electrical properties were measured by Hall measurement system. ITO thin films surface were measured by Scanning electron microscope. Atomic force microscope surface roughness scan for ITO thin films. ITO thin films secondary electron emission coefficient(${\gamma}$) was measured by ${\gamma}$-Focused ion beam. The resistivity is about $2.4{\times}10^{-4}{\Omega}{\cdot}cm$ and the weighted average transmittance is about 84.93% at 3 sccm oxygen flow rate. Also, we investigated Work-function of ITO thin films by using Auger neutralization mechanism according to secondary electron emission coefficient(${\gamma}$) values. We confirmed secondary electron emission peak at 3 sccm oxygen flow rate.