• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.165-168
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• 2002

본 논문에서는 밀리미터 웨이브 대역의 PBG(photonic band gap)를 적용한 고출력 증폭기를 설계하였다. 증폭기의 선형성과 효율을 개선하기 위하여 PBG를 증폭기의 2차 고조파를 제거하도록 설계하였다. 또한 기존의 PBG형태와 비슷한 성능을 가지면서도 출력 라인을 따라서 구현되는 PBG의 길이는 감소하도록 PBG를 변형하여 최적화 시켰다.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.226-229
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• 2003

본 논문은 Wireless LAN 주파수 대역$(5725\~5825\;MHz)$에서의 다차원패턴기술(Photonic Band Gap : PBG)을 이용한 Yagi-Uda 안테나와 결합하여 광대역 마이크로스트립 패치 안테나를 구현 하였으며, PBG Cell을 이용한 안테나와 이용하지 않은 안테나를 비교 분석하였다. PBG 구조를 적용한 안테나에서의 대역폭이 약 30 MHz 정도 더 넓게 나왔으며, 안테나의 이득은 -1dB정도 더 낮게 나왔는데 이는 Ground 면에 2차원적인 PBG Cell을 적용한 효과 때문으로 분석된다.

• Journal of information and communication convergence engineering
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• v.13 no.1
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• pp.50-55
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• 2015

We report design and simulation of a two-dimensional (2D) silicon-based nanophotonic crystal as an optical insulator to enhance the light emission efficiency of light-emitting diodes (LEDs). The device was designed in a manner that a triangular array silicon photonic crystal light insulator has a square trench in the middle where LED can be placed. By varying the normalized radius in the range of 0.3-0.5 using plane wave expansion method (PWEM), we found that the normalized radius of 0.45 creates a large band gap for transverse electric (TE) polarization. Subsequently a series of light propagation simulation were carried out using 2D and three-dimensional (3D) finite-difference time-domain (FDTD). The designed silicon-based light insulator device shows optical characteristics of a region in which light propagation was forbidden in the horizontal plane for TE light with most of the visible light spectrum in the wavelength range of 450 nm to 600 nm.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.1
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• pp.69-72
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• 2004

A bandpass filter has been designed by employing the PBG structure and the aperture on the ground together in this paper. The harmonics of band pass filter have been suppressed by employing the PBG structure and the bandwidth of it has been broadened by using the aperture on the ground. The three kinds of PBG structures has been combined to suppress the harmonics of the filter The center frequency of filter is 2.2 GHz and the bandwidth has been increased from $40\%$ by the aperture and all harmonics were suppressed about 35dBc by the PBG. The insertion loss has been reduced 3.0dB to 2.6dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.10
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• pp.1071-1077
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• 2002

In this paper, we have studied the dependence of insertion loss of the pressed microstrip PBG ring consisting of coupled two microstrip lines. When the distance decreases, two or three attenuation poles are created by the coupling between the lines. Thus the pressed PBG ring exhibits a wide stop band and sharp cutoff characteristics.

• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.317-322
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• 2003

In this paper, we design a slow-wave bandpass filter that uses a microstrip line periodically loaded with microstrip ing resonators for WLAN(5 GHz). Unlike conventional slow-wave filters, this filter is designed to produce a narrow passband at the fundamental mode of the resonators and provide lower insertion loss than that of parallel- or cross-coupled ring bandpass filters. A PBG(Photonic Band Gap) structure patterned in the ground plane is used to suppress the spurious transmission and extend out-of-band rejections Experimental result shows that the first spurious response in the stopband of the slow-wave bandpass filter can be rejected using a PBG structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.587-587
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• 2013

ZnS is well-known direct band gap II-VI semiconductor, and it attracts intense interest due to its excellent properties of luminescence which enable ZnS to have promising materials for optical, photonic and electronic devices. Especially, the emission wavelength of ZnS falls in the UV absorption band of most organic compoundsand biomolecules, thus it is envisaged that ZnS based devices may find applications in increasingly important fluorescence sensing. We have developed a facile and effective one-step process for the fabrication of single-crystalline and pure-wurtzite ZnS nanostructures possessing sharp band-edge emission at room-temperature having diverse length-to-width ratios. Each of nanostructures was composed of chemically pure, structurally uniform, single-crystalline, and defect-free ZnS. These features not only suppress trap or surface states emission centered at 420 nm, but also enhance UV band-edge emission centered at 327 nm, which give as-synthesized our ZnS nanostructures possible sharp UV emission at room temperature. The reaction medium consisting of mixed solvents such as hydrazine, ethylenediamine, and water as well as proper reaction time and temperature have played an important role in the crystallinity and optical properties of ZnS nanostructures. As-synthesized our ZnS nanostructures possessing sharp UV emission guarantee high potential for both fundamental research and technological applications.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.10A
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• pp.847-852
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• 2003

Apertures and PBG(Photonic Band Gap) has been employed on the ground plane in the coupled line filter simultaneously. In order to observe the maximum bandwidth, we used the line gap 0.2mm which is can be made in our lab. Band-pass filter type is four-stage coupled strip line filter. Teflon has been used for the substrate ($\varepsilon$$\sub$r/=3.2). The center frequency and the bandwidth are 2.18GHz and 230MHz, respectively. The bandwidth is broaden from 230MHz to 310MHz (80Mhz, about 34.7%) by aperture effect and harmonic frequencies are suppressed to 20-30dB by PBG effect. So the harmonic frequencies have been suppressed by the PBG effect and the bandwidth are broaden by aperture effect.

• Korean Journal of Materials Research
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• v.21 no.12
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• pp.697-702
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• 2011

Two-dimensional (2D) nano patterns including a two-dimensional Bravais lattice were fabricated by laser interference lithography using a two step exposure process. After the first exposure, the substrate itself was rotated by a certain angle, $90^{\circ}$ for a square or rectangular lattice, $75^{\circ}$ for an oblique lattice, and $60^{\circ}$ for a hexagonal lattice, and the $90^{\circ}$ and laser incident angle changed for rectangular and the $45^{\circ}$ and laser incident angle changed for a centered rectangular; we then carried out a second exposure process to form 2D bravais lattices. The band structure of five different 2D nano patterns was simulated by a beam propagation program. The presence of the band-gap effect was shown in an oblique and hexagonal structure. The oblique latticed ZnO nano-photonic crystal array had a pseudo-bandgap at a frequency of 0.337-0.375, 0.575-0.596 and 0.858-0.870. The hexagonal latticed ZnO nano-crystallite array had a pseudo-bandgap at a frequency of 0.335-0.384 and 0.585-0.645. The ZnO nano structure with an oblique and hexagonal structure was grown through the patterned opening window area by a hydrothermal method. The morphology of 2D nano patterns and ZnO nano structures were investigated by atomic force microscopy and scanning electron microscopy. The diameter of the opening window was approximately 250 nm. The height and width of ZnO nano-photonic crystals were 380 nm and 250 nm, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.10
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• pp.1005-1016
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• 2002

In this paper, a 2 GHz tapered shape of multiport power divider/combiner modified from the model published by [10] and adopted PBG(Photonic Band Gap) structure is proposed. Parameters determining electrical property of the circuit structure have been analyzed by HFSS simulation. For input matching, balance of output signals and phase linearity at each output port, one circular hole has been etched out on the circuit surface. 1:2 and 1:3 power dividers/combiners designed by this study have been compared with the same circuits designed by the method of [10] in terms of S-parameters. As a result, it has been found that tile modified structure and PBG of power divider/combiner have improved return loss more than 20 dB and another 18 dB. respectively, at 2 GHz.