• 제목/요약/키워드: photoluminescence spectrum

검색결과 273건 처리시간 0.026초

반응제에 따른 $Y_3Al_5O_{12}$ : $Tb^{3+}$ 나노형광체의 발광 특성 (Photoluminescence Characteristics of $Y_3Al_5O_{12}$:$Tb^{3+}$ nano-Phosphors by various reagents)

  • 곽현호;김세준;차재혁;최형욱
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.440-441
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    • 2007
  • For this study, terbium-doped yttrium aluminum garnet (YAG:Tb) phosphor powders were prepared via the combustion process using the varous reagents. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope(SEM), and photoluminescence (PL). Single-phase cubic YAG:Tb crystalline powder was obtained at $1000^{\circ}C$ by directly crystallizing it from amorphous materials, as determined by XRD techniques. The SEM image showed that the resulting YAG:Tb powders had uniform sizes and good homogeneity. The photoluminescence spectra of the YAG:Tb nanoparticles were investigated to determinethe energy level of electron transition related to luminescence processes. There were three peaks in the excited spectrum, and the major one was a broad band of around 274 nm. Also, the YAG:Tb nanoparticles showed two emission peaks in the range of 450~500 nm and 525~560 nm, respectively, and had maximum intensity at 545 nm.

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Characterization of the ZnSe/ZnS Core Shell Quantum Dots Synthesized at Various Temperature Conditions and the Water Soluble ZnSe/ZnS Quantum Dot

  • Hwang, Cheong-Soo;Cho, Ill-Hee
    • Bulletin of the Korean Chemical Society
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    • 제26권11호
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    • pp.1776-1782
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    • 2005
  • ZnSe/ZnS, UV-blue luminescent core shell quantum dots, were synthesized via a thermal decomposition reaction of organometallic zinc and solvent coordinated Selenium (TOPSe) in a hot solvent mixture. The synthetic conditions of the core (ZnSe) and the shell (ZnS) were independently studied at various reaction temperature conditions. The obtained colloidal nanocrystals at corresponding temperatures were characterized for their optical properties by UV-vis, room temperature solution photoluminescence (PL) spectroscopy, and further obtained powders were characterized by XRD, TEM, and EDXS analyses. The synthetic temperature condition to obtain the best PL emission intensity for the ZnSe core was 300 ${^{\circ}C}$, and for the optimum shell capping, the temperature was 135 ${^{\circ}C}$. At this temperature, solution PL spectrum showed a narrow emission peak at 427 nm with a PL efficiency of 15%. In addition, the measured particle sizes for the ZnSe/ZnS nanocomposite via TEM were in the range of 5 to 12 nm. Furthermore, we have synthesized water-soluble ZnSe/ZnS nanoparticles by capping the ZnSe/ZnS hydrophobic surface with mercaptoacetate (MAA) molecules. For the obtained aqueous colloidal solution, the UV-vis spectrum showed an absorption peak at 250 nm, and the solution PL emission spectrum showed a peak at 425 nm, which is similar to that for hydrophobic quantum dot ZnSe/ZnS. However, the calculated PL efficiency was relatively low (0.1%) due to the luminescence quenching by water and MAA molecules. The capping ligand was also characterized by FT-IR spectroscopy, with the carbonyl stretching peak in the mercaptoacetate molecule appearing at 1575 $cm ^{-1}$. Finally, the particle sizes of the MAA capped ZnSe/ZnS were measured by TEM, showing a range of 12 to 17 nm.

실리콘산화막의 광루미니센스 변화에 관한 연구 (Changes of photoluminescence in silicon-oxide films)

  • 이재희
    • 한국진공학회지
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    • 제9권3호
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    • pp.216-220
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    • 2000
  • 실리콘이온 주입 후 $1100^{\circ}C$에서 열처리된 실리콘 산화막에서 Si+ dose 량의 변화에 대한 광루미니센스의 변화를 관찰하였다. 모든 시료에서 가시광과 적외선영역의 광루미니센스를 관찰할 수 있었다. 광루미니센스의 peak는 7000 $\AA$, 7400 $\AA$, 그리고 8400 $\AA$ 근처에 있었으며, $Si^+$ dose량이 변함에 따라 peak의 위치와 강도가 변하였다. 이온 주입되는 $Si^+$ dose량이 $1\times10^{17}\textrm{cm}^2$일 때 광루미니센스에서 특이하게 3개의 peak를 가지고 있었으며 다른 $Si^+$ dose량의 시료에 비하여 큰 강도를 보여준다. 주입된 $Si^+$ 이온들이 실리콘 산화막내에 서 결함을 생성하여서 광루미니센스에 기여를 한다. $Si^+$ dose량과 열처리 시간 등을 변화시키면 높은 에너지의 Si 위주 radiative defect, 낮은 에너지의 Si 위주 radiative defect, 그리고 nonradiative defect들이 관계하는 것으로 생각되어져 왔으나 적절한 $Si^+$ dose량으로 더 많은 radiative defect를 생성시킬 수 있음을 확인하였다. $Si^+$ dose량을 조절함으로서 광루미니센스의 peak의 위치와 강도를 제어할 수 있을 것이다.

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PL을 이용한 HPHT 처리된 다이아몬드 감별에 관한 연구 (A study on the identification of HPHT diamond by the photoluminescence)

  • 김영출;김판채
    • 한국결정성장학회지
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    • 제13권1호
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    • pp.31-35
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    • 2003
  • PL data에 의해 다이아몬드가 HPHT(고온고압)으로 처리하는 과정을 거치면서 격자 내에 불순물 원자뿐만 아니라 공공과 침입형 원자의 움직임과 감소, 소멸, 생성 등으로 일부 격자가 재배열됨이 드러났다. 특히, PL spectrum은 Type IIa 다이아몬드가 가지는 매우 작은 양의 질소 불순물도 명확히 나타났으며, 이로 인해 상당한 수의 점결함이 결정 격자 내에 분산되어 있음을 알 수 있었다.

Excitation Energy Induced S-shaped PL behavior in Graphene Quantum Dots

  • 장민호;조용훈
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.351.2-351.2
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    • 2016
  • Graphene quantum dots (GQDs) have attracted much attention because of various advantages such as cost-effectiveness of synthesis, low toxicity, and photostability. The origins of photoluminescence (PL) in GQDs were suggested as the intrinsic states for localized sp2 carbon domains and the extrinsic states formed by oxygen-functional groups.[1,2] Nevertheless, it is still unclear to understand the information of electric band structure in GQD. Here, we observed excitation energy induced S-shaped PL behavior. The PL peak energy position shows an S-shaped shift (redshift-blueshift-redshift) as function of the excitation wavelengths. From various samples, we only observed S-shaped PL shift in the GQDs with both luminescent origins of intrinsic and extrinsic states. Therefore, this S-shaped PL shift is related to different weight of intrinsic and extrinsic states in PL spectrum depending on the excitation wavelengths. This would be the key result to understand the electric band structure of the GQDs and its derivatives.

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Effect of $Bi^{3+}$ addition on photoluminescence of (Y,Gd)(V,P)$O_4$:Eu phosphor

  • Kyung, Hyun-Ai;Choi, Sung-Ho;Seong, Tae-Yeon;Jung, Ha-Kyun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.569-571
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    • 2008
  • The structural and optical properties on $Bi^{3+}$ addition in (Y,Gd)(V,P)$O_4:Eu^{3+}$ red phosphor were investigated. With the addition of $Bi^{3+}$, the band edge in excitation spectrum shifts toward longer wavelength region, resulting in remarkable enhancement of the red emission intensity at 619 nm.

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Synthesis and VUV Photoluminescence Characterization of a Tb-activated LiGd$(PO_3)_4$

  • Tae, Se-Won;Choi, Sung-Ho;Hur, Nam-Hoe;Jung, Ha-Kyun
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1283-1286
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    • 2009
  • The structural and optical properties on $Tb^{3+}$ addition into LiGd$(PO_3)_4$ compound were investigated by X-ray powder diffraction and photoluminescence spectroscopy. The emission spectrum shows the strongest peak corresponding to the $^5D_4{\rightarrow}^7F_5$ transition of $Tb^{3+}$ at 546 nm under 147 nm and 173 nm excitation. 85 mol% concentration of $Tb^{3+}$ for LiGd$(PO_3)_4$ is much higher than other Tb-doped phosphors.

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Photoluminescence of Nanocrystalline CdS Thin Films Prepared by Chemical Bath Deposition

  • Park, Wug-Dong
    • Transactions on Electrical and Electronic Materials
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    • 제11권4호
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    • pp.170-173
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    • 2010
  • Nanocrystalline cadmium sulfide (CdS) thin films were prepared using chemical bath deposition in a solution bath containing $CdSO_4$, $SC(NH_2)_2$, and $NH_4OH$. The CdS thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL), and Fourier transform infrared spectroscopy (FTIR). The as-deposited CdS thin film prepared at $80^{\circ}C$ for 60 min had a cubic phase with homogeneous and small grains. In the PL spectrum of the 2,900 A-thick CdS thin film, the broad red band around 1.7 eV and the broad high-energy band around 2.7 eV are attributed to the S vacancy and the band-to-band transition, respectively. As the deposition time increases to over 90 min, the PL intensity from the band-to-band transition significantly increases. The temperature dependence of the PL intensity for the CdS thin films was studied from 16 to 300 K. The $E_A$ and $E_B$ activation energies are obtained by fitting the temperature dependence of the PL intensity. The $E_A$ and $E_B$ are caused by the deep trap and shallow surface traps, respectively. From the FTIR analysis of the CdS thin films, a broad absorption band of the OH stretching vibration in the range $3,000-3,600\;cm^{-1}$ and the peak of the CN stretching vibration at $2,000\;cm^{-1}$ were found.

공기 중에서 열증발법에 의하여 제작된 정팔면체 ZnO 결정 (ZnO Octahedron Fabricated by Thermal Evaporation Technique in Air)

  • 이근형
    • 한국전기전자재료학회논문지
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    • 제26권4호
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    • pp.294-297
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    • 2013
  • ZnO crystals with octahedral shape were synthesized by thermal evaporation technique. $ZnF_2$ powder was used as the source material. The thermal evaporation and oxidation of $ZnF_2$ powder was carried out for 1 hr at $1,000^{\circ}C$ in air under atmospheric pressure. SEM images showed that the ZnO crystals produced by oxidizing $ZnF_2$ vapor possessed a characteristic octahedral shape. XRD spectrum revealed that the ZnO octahedron had hexagonal wurtzite structure. In the room temperature photoluminescence spectrum, a strong green emission peak at around 510 nm was observed.

Ordered CdS nanorods- organic hybrid solar cells

  • 강윤목;김동환
    • 신재생에너지
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    • 제1권1호
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    • pp.32-36
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    • 2005
  • We studied the optoelectronic properties of hybrid solar cells formed by mixing cadmium sulfide [CdS] nanorods with a conjugated polymer, poly-2-methoxy, 5-[2'-ethy[hexyloxy]-1,4-p-phenylenevinylene[MEH-PPV]. CdS nanorods were grown vertically on Ti substrates by electrochemical deposition through a porous alumina template. Absorption spectrum of the composite layer was the same as the superposition of the absorption spectrum of each individual layer. The photoluminescence signal from MEH-PPV film was reduced as a result of the mixing. The energy conversion efficiency of MEH-PPV improved from $0.0012\%$ to about $0.60\%$ when combined with the vertically aligned CdS nanorods.

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