• 한국전기전자재료학회논문지
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• 제36권4호
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• pp.376-384
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• 2023

Nitrogen-doped graphene was synthesized by a hydrothermal method using graphene oxide (GO) as the raw material, urea as the reducing agent and nitrogen as the dopant. The morphology, structure, composition and electrochemical properties of the samples are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), nitrogen adsorption-desorption analysis, electrical conductivity and electrochemical tests. The results show that urea can effectively reduce GO and achieve nitrogen doping under the hydrothermal conditions. By adjusting the mass ratio of raw materials to dopants, the graphene with different nitrogen doping contents can be obtained; the nitrogen content range is from 5.28~6.08% (atomic fraction percentage).When the ratio of dopant to urea is 1:30, the nitrogen doping content reaches a maximum of 6.08%.The supercapacitor performance test shows that the nitrogen content prepared by the ratio of 6.08% is the best at 0.1 A·g^-1. The specific capacitance is 95.2 F·g^-1.

• 센서학회지
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• 제32권6호
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• pp.425-431
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• 2023

An asymmetric metal-semiconductor-metal Al_0.24Ga_0.76N ultraviolet (UV) sensor was fabricated, and the effects of local Joule heating were investigated. After dielectric breakdown, the current density under a reverse bias of 2.0 V was 1.1×10^-9 A/cm², significantly lower than 1.2×10^-8 A/cm² before dielectric breakdown; moreover, the Schottky behavior of the Ti/Al/Ni/Au electrode changed to ohmic behavior under forward bias. The UV-to-visible rejection ratio (UVRR) under a reverse bias of 7.0 V before dielectric breakdown was 87; however, this UVRR significantly increased to 578, in addition to providing highly reliable responsivity. Transmission electron microscopy revealed interdiffusion between adjacent layers, with nitrogen vacancies possibly formed owing to local Joule heating at the AlGaN/Ti/Al/Ni/Au interfaces. X-ray photoelectron microscopy results revealed decreases in the peak intensities of the O 1s binding energies associated with the Ga-O bond and OH-, which act as electron-trapping states on the AlGaN surface. The reduction in dark current owing to the proposed local heating method is expected to increase the sensing performance of UV optoelectronic integrated devices, such as active-pixel UV image sensors.

• Bulletin of the Korean Chemical Society
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• 제23권2호
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• pp.225-228
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• 2002

Amorphous $Ga_2O_3$ films have been grown on Si(100) substrates by metal organic chemical vapor deposition (MOCVD) using gallium isopropoxide, $Ga(O^iPr)_3$, as single precursor. Deposition was carried out in the substrate temperature range 400-800 $^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis revealed deposition of stoichiometric $Ga_2O_3$ thin films at 500-600 $^{\circ}C$. XPS depth profiling by $Ar^+$ ion sputtering indicated that carbon contamination exists mostly in the surface region with less than 3.5% content in the film. Microscopic images of the films by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed formation of grains of approximately 20-40 nm in size on the film surfaces. The root-mean-square surface roughness from an AFM image was ${\sim}10{\AA}$. The interfacial layer of the $Ga_2O_3$/Si was measured to be ${\sim}35{\AA}$ thick by cross-sectional transmission electron microscopy (TEM). From the analysis of gaseous products of the CVD reaction by gas chromatography-mass spectrometry (GC-MS), an effort was made to explain the CVD mechanism.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.171-171
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• 2013

2층 FCCL (연성회로기판, Flexible Copper Clad Laminate)에 있어서 폴리이미드 필름과 구리의 접착력을 향상 시키기 위해 기존에 사용되고 있는 Ni-Cr대신 박리강도가 높고 에칭성도 매우 뛰어난 Ni-Mo-Nb 박막을 Roll-to roll 스퍼터 장비를 이용하여 개발하였다. 새롭게 개발된 Ni-Mo-Nb 박막은 기존 연구되어진 Ni-Cr 물질 대비 고온 박리강도 약 1.5~2.0배, 에칭성 8배 이상의 매우 우수한 특성을 보였다. Ni-Mo-Nb 접착층의 두께가 7~40 nm로 증가함에 따라 상온 박리강도가 향상 되는 것을 확인하였다. Ni-Mo-Nb 박막을 증착 하기 전 폴리이미드 기판표면을 RF 플라즈마 전처리 하였을 때 0.67 kg f/cm의 우수한 상온 박리강도를 나타내었으며 FCCL 샘플을 $150^{\circ}C$에서 168시간동안 열처리 한 후 접착력을 측정하였을 때도 0.54 kg f/cm의 높은 고온 박리강도를 보였다. FCCL의 박리강도, 표면 거칠기, 원소들의 화학적 결합, 박막의 미세구조를 peel test, atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy를 이용하여 폴리이미드 기판 플라즈마 전처리 효과를 확인하였다. 그 결과 플라즈마 전처리를 한 폴리이미드 기판의 경우 처리하지 않은 기판보다 상온과 고온에서 더 우수한 접착력을 가지는 것을 확인 할 수 있었는데 이것은 폴리이미드 기판의 표면 거칠기 증가에 의한 mechanical interlocking effect가 아닌 전처리를 통한 폴리이미드 표면 개질로 C-0, C-N와 같은 chemical functional group이 증가했기 때문인 것으로 확인되었다.

• 한국재료학회지
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• 제23권8호
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• pp.469-475
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• 2013

Al-doped ZnO(AZO) thin films were synthesized using atomid layer deposition(ALD), which acurately controlled the uniform film thickness of the AZO thin films. To investigate the electrical and optical properites of the AZO thin films, AZO films using ALD was controlled to be three different thicknesses (50 nm, 100 nm, and 150 nm). The structural, chemical, electrical, and optical properties of the AZO thin films were analyzed by X-ray diffraction, X-ray photoelectron spectroscopy, field-emssion scanning electron microscopy, atomic force microscopy, Hall measurement system, and UV-Vis spectrophotometry. As the thickness of the AZO thin films increased, the crystallinity of the AZO thin films gradually increased, and the surface morphology of the AZO thin films were transformed from a porous structure to a dense structure. The average surface roughnesses of the samples using atomic force microscopy were ~3.01 nm, ~2.89 nm, and ~2.44 nm, respectively. As the thickness of the AZO filmsincreased, the surface roughness decreased gradually. These results affect the electrical and optical properties of AZO thin films. Therefore, the thickest AZO thin films with 150 nm exhibited excellent resistivity (${\sim}7.00{\times}10^{-4}{\Omega}{\cdot}cm$), high transmittance (~83.2 %), and the best FOM ($5.71{\times}10^{-3}{\Omega}^{-1}$). AZO thin films fabricated using ALD may be used as a promising cadidate of TCO materials for optoelectronic applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.72-72
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• 2010

탄소나노튜브(carbon nanotubes : CNTs)는 뛰어난 전기적, 물리적인 특성을 가지고 있기 때문에 다양한 분야에서 이를 활용하려는 노력들이 활발히 이루어지고 있다. CNTs의 전기적인 특성은 직경에 의해 결정되므로, 직경을 균일하게 제어하는 일이 CNTs를 기반으로 한 전자소자 응용에 가장 중요한 사항이라 할 수 있다. 일반적으로 화학기상증착법(chemical vapor deposition, CVD)으로 합성된 CNTs의 직경은 촉매의 크기에 의존하기 때문에, 촉매의 크기를 제어하기 위한 다양한 연구들이 활발히 진행되고 있다[1-3]. 하지만 CNTs의 성장온도 근처에서 촉매 입자는 표면 확산(surface diffusion)에 의해 응집(agglomeration)되기 때문에 작고 균일한 크기의 촉매를 얻기 어렵다. 본 연구에서는 Si(001) 기판 위에 지지층(supporting layer)인 Al의 두께를 변화시켜 증착하고, 열적산화과정을 통해 $Al_2O_3$ 층을 형성한 후 Fe을 증착하여 CNTs를 합성하였다. $Al_2O_3$ 지지층과 Fe 촉매입자의 구조와 화학적 상태를 원자힘현미경 (atomic force microscopy, AFM), 주사전자현미경 (scanning electron microscopy, SEM), 투과전자현미경 (transmission electron microscopy, TEM), X-선 광전자 분광기(X-ray photoelectron spectroscopy)를 통해 분석하였고, 성장된 CNTs는 SEM, TEM, 라만 분광법 (Raman spectroscopy)을 통해 분석하였다. 그 결과, $Al_2O_3$ 층은 두께에 따라 각기 다른 표면 거칠기(RMS roughness)와 결정립(grain)의 크기를 갖게 되며, 이러한 표면구조가 Fe 촉매입자의 표면확산에 의한 응집에 관여하여 CNTs의 직경에 영향을 미치는 것을 확인하였다. 또한 $Al_2O_3$ 지지층의 두께가 15 nm인 경우, Fe의 응집현상이 억제되어 좁은 직경분포를 지닌 고순도 단일벽 탄소나노튜브(Single-walled CNTs)가 성장되는 것을 확인하였다.

• 한국재료학회지
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• 제31권6호
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• pp.345-352
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• 2021

In this study, Ni nanoparticle supported by graphene oxide (GO) (Ni-GO) is successfully synthesized through hydrothermal synthesis and calcination, and Cr(VI) is extracted from aqueous solution. The morphology and structure of Ni-GO composites are characterized by scanning electron microscopy (SEM), trans mission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). High-resolution transmission electron microscopy (HRTEM) and XRD confirms the high dispersion of Ni nanoparticle after support by GO. Loading Ni on GO can obviously enhance the stability of Ni-GO composites. It can be calculated from TGA that the mass percentage of Ni is about 60.67 %. The effects of initial pH and reaction time on Cr(VI) removal ability of Ni-GO are investigated. The results indicate that the removal efficiency of Cr(VI) is greater than that of bared GO. Ni-GO shows fast removal capacity for Cr(VI) (<25 min) with high removal efficiency. Dynamic experiments show that the removal process conforms to the quasi-second order model of adsorption, which indicates that the rate control step of the removal process is chemical adsorption. The removal capacity increases with the increase of temperature, indicating that the reaction of Cr(VI) on Ni-GO composites is endothermic and spontaneous. Combined with tests and characterization, the mechanism of Cr(VI) removal by rapidly adsorption on the surface of Ni-GO and reduction by Ni nanoparticle is investigated. The above results show that Ni-GO can be used as a potential remediation agent for Cr(VI)-contaminated groundwater.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1570-1572
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• 2004

OLED(organic light-emitting diode)소자에 사용되는 ITO(Indium-tin oxide)전극에 Ar/$O_3$ 플라즈마 표면처리 함으로써 ITO전극에 표면상태의 개선에 좋은 영향을 미치는 것으로 나타났다. 13.56MHZ RF 플라즈마 장치를 이용하여 Ar/$O_3$ 플라즈마 처리한 후 AFM(atomic force microscopy)측정을 통해 표면 morphologyjroughless를 분석하고, XPS(X-Ray Photoelectron Spectroscopy)분석을 통해 표면의 화학적 조성비 분석을 수행 하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.159-159
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• 2009

We characterize a flexible self-assembled liquid crystal display (LCD) fabricated from a polyimide (PI) alignment layer with polydimethylsiloxane pixel walls. Ion beam (IB) irradiation aligned LC molecules in the PI layer and bonded two flexible plastic substrates in a one-step assembly of the pixel walls. X-ray photoelectron spectroscopic analysis, Fourier transform infrared spectroscopy, and scanning electron microscopy provided chemical and physical evidence for the formation of stable chemical bonds between the PI layer and the PDMS pixel walls in addition to the important maintenance of a uniform 6 um gap between the two substrates without the use of any epoxy resins or other polymers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.229-229
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• 2012

Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.