• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.8
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• pp.1197-1202
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• 1989

In this study, physical properties of silicon dioxide film deposited on GaAs by photo excitation are evaluated using ellisometry, ESCA and AES. Under the pressure of 2-8 torr, silicon dioxide film is deposited on GaAs by photo excitation at 200\ulcorner using gas mixtures of SiH4 and N2O. The measured results show refractive index varies from 1.37 to 1.42 and stoichiometry from 1.97 to 2.09 with process pressure. The observed characteristics of deposition rate are divided into three different regions with process pressure and possible deposition mechanism are also discussed, qualitatively.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.3
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• pp.93-101
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• 1998

In Integrated Tube Components(ITC) process in themanufacturing of color display tube, we describe the necessity of the convergence measurement method using photo sensors. Compared with methods using 1D or 2D cameras, its characteristics is to use of moving image patterns and fixed sensors. This measurement method is formulated as the measurement problem of the phase difference in phase changing periodic signals. The convergence measurement system using photo sensors, for the good performance, must have a small standard deviation for the repetitive measurement in the same condition and a fast measurement time for thecovergence change. By above two conditions, we proposed the real time measurement algorithm of the pahse difference using fundametal and harmonic in phase changing periodic signals. And, the proposed algorithm is applied to the convergence measurement system.

• Journal of Korean Ophthalmic Optics Society
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• v.6 no.1
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• pp.81-85
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• 2001

The color vision was composed of the wavelength absorption of three R. G. B cone photo-receptors and the r-g, y-b channel of an opponent process. The color vision defects mechanism for the electric circuit made up a photo cell, relay switch and transformer. This mechanism very well applied to the color vision defects mechanism owing to be y-b chromatic valence function in case of a cone R or G defects and to be r-g chromatic valence function in case of a cone B defects.

• Journal of Sensor Science and Technology
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• v.21 no.5
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• pp.389-393
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• 2012

A chaotic oscillator with light controllability was designed. The proposed chaotic oscillator consists of a photo sensor, two phase clock driven MOS switches, nonlinear function blocks for chaotic signal generation. SPICE circuit analysis using a 0.35 um CMOS process parameters was performed for its chaotic dynamics. And we confirmed that chaotic behaviors of the circuit can be controlled according to light intensity. By SPICE simulation, chaotic dynamics by time waveforms, frequency analysis was analyzed. SPICE results showed that proposed circuit can make various light-controlled chaotic signals.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.4
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• pp.341-344
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• 2001

We synthesized a photo-crosslinkable polymide (polymide (PI)-chalcone-biphenyl (BP)) based polymer and control of pretilt angle for a nematic liquid crystal (NLC) using two kinds of the photodimerization methods by polarized UV exposure the photopolymer surfaces was studied. Pretilt angle of the NLCs using a conventional photodimerization method could be varied between 0$^{\circ}$ and 3$^{\circ}$, by controlling the condition of UV exposure. Pretilt angle of the NLCs using the conventional photodimerization method was higher than a in-situ photodimerization method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.1014-1018
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• 2003

A photoalignment material of a PGMAcr, poly[3-(acryloyloxy)-2-hydroxypropyl methacrylate] using a photopolymerized the acrylate unit by photo-initiator and a PGMA4Ch, poly[3(4-chalconyloxy)-2-hydroxypropyl methacrylate] using a photodimerization by chalcone group were synthesized. Also, the liquid crystal (LC) aligning capabilities on the photopolymer layers were studied. A good LC alignment with UV exposure on the PGMAcr surface can be obtained. However, the LC alignment defects were observed on the PGMA4Ch surface. The LC aligning capabilities of the PGMAcr surface by photo-initiator were better than that of the PGMA4Ch surface by chalcone group as photosensitive moiety.

• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.12-18
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• 2020

In semiconductor manufacturing, defect detection is critical to maintain high yield. Currently, computer vision systems used in semiconductor photo lithography still have adopt to digital image processing algorithm, which often occur inspection faults due to sensitivity to external environment. Thus, we intend to handle this problem by means of using Mask R-CNN instead of digital image processing algorithm. Additionally, Mask R-CNN can be trained with image dataset pre-processed by means of the specific designed digital image filter to extract the enhanced feature map of Convolutional Neural Network (CNN). Our approach converged advantage of digital image processing and instance segmentation with deep learning yields more efficient semiconductor photo lithography inspection system than conventional system.

• Journal of the Semiconductor & Display Technology
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• v.7 no.4
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• pp.57-62
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• 2008

Image retrieval is one of the most exciting and rapidly growing research issues in the field of multimedia technology. This paper proposes a new method that performs search the relevant images by using query-by-example. The proposed method for search and retrieval of images utilizes the location information where the image had been taken. The system associates the photo images with their corresponding GPS coordinates that are used as metadata for searching. Experimental results show that the proposed method demonstrates better performance improving up to 59% of average recall and 49% of average precision. Moreover, we learned from the experimental results geo-location information embedded within the image header is more effective and positive on the search and storage.

• Journal of information and communication convergence engineering
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• v.10 no.3
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• pp.295-299
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• 2012

Defect generation during organic bottom anti-reflective coating (BARC) in the photo lithography process is closely related to humidity control in the BARC coating unit. Defects are related to the water component due to the humidity and act as a blocking material for the etching process, resulting in an extreme pattern bridging in the subsequent BARC etching process of the poly etch step. In this paper, the lower limit for the humidity that should be stringently controlled for to prevent defect generation during BARC coating is proposed. Various images of defects are inspected using various inspection tools utilizing optical and electron beams. The mechanism for defect generation only in the specific BARC coating step is analyzed and explained. The BARC defect-induced gate pattern bridging mechanism in the lithography process is also well explained in this paper.

• Journal of the Korean institute of surface engineering
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• v.25 no.3
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• pp.126-132
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• 1992

Recent VLSI requires materials with high dielectric constant in order to reduce their storage capacitor areas. Thin TaOx film was formed from Ta(OCH3)5 by photo-CVD method at a low temperature. The result shows that the film obtained by photo-CVD method is this study has good step coverage, high dielectric constant (20-25) and low leakage current. The high strong peaks from Ta(4f), Ta(4d), and O(ls) levels were observed by XPS analysis. From the diffraction pattern and TEM prcture analysis, the TaOx thin film was observed to be amorphous. This kind of the deposition method could be considered to be a very promising method applied to VLSI.