• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.411-415
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• 1987

A $32{\times}33$ MOS-type area image sensor has been fabricated. The blooming current is reduced to 1/14 by forming +p photocell in P-well instead of a simple p-type substrate. A shallow n+ junction is made to improve the sensitivity of photodiode on short wavelength. Bootstrapping circuit technique is applied to obtain high speed dynamic shift register. The shift register operates at up to 10MHz for 7V clock.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.282-283
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• 2006

The transport phenomena of arsenic (As) doped amorphous selenium(a-Se:As) thin film for digital X-ray conversion material has been reported. The effect of As addition on the carrier mobility and recombination lifetime in a-Se:As sample has been measured using the moving photo-carrier grating (MPG) technique. An Increase in hole mobility and recombination was observed when 0.3% arsenic, was added into a-Se sample, whereas electron mobility decrease with arsenic addition due to the defect density. The fabricated a-Se:03% As device exhibited the highest X-ray sensitivity.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1364-1369
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• 2004

New method for the design, fabrication, and calibration of micro-machined heat flux sensor has been developed. Two types of micro-machined heat flux sensor having different thicknesses of the thermal-resistance layer are fabricated using the MEMS technique. Photo-resist patterning using a chrome mask, bulk-etching and copper-nickel sputtering using a shadow mask are applied to make heat flux sensors, which are calibrated in the convection-type heat flux calibration facility. The sensitivity of the device varies with thermal-resistance layer, and hence can be used to measure the heat flux in heat-transfer phenomena.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.906-911
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• 2004

In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode. Considering these results, we fabricated p-i-n diodes on the high resistive($4k{\Omega}{\cdot}cm$) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of p-i-n diode can be decreased by the application of finger pattern has parallel resistance structure from $571\Omega$ to $393\Omega$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.71-74
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• 2003

Photoconductor for direct detection fiat-panel imager present a great materials challenge, since their requirement include high X-ray absorption, ionization and charge collection, low leakage current and large area deposition, CdTe is practical material. We report studies of detector sensitivity, That is an CdTe with $5{\mu}m$ thickness on glass. That is hybrid layer of depositting ZnS:AgCl phosphor with $100{\mu}m$ on CdTe. The leakage current of hybrid is similar to it of a-Se, but photocurrent is larger than a-Se. Both of them have high spatial resolution, but hybrid has higher sensitivity than a-Se at comparable bias voltage.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.10 no.1
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• pp.55-62
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• 2004

Synthesis of poly[N-(formyloxyphenyl)maleimide](PFOMI) as photopolymer were investigated with various kinds of photosensitive groups. Generally, photopolyimide have some deficiencies in solubility, sensitivity, reserve stability of the photosensitive solution, and the precision of image pattern. The study has been required on those polymers which have high glass transition temperature and photo efficiency, and low dielectricity. The existing condensation resins require high curing temperature and perfect elimination of subreacted materials that are produced during the process after irradiation and various membrane damages such as the deformation and contraction in image pattern cure. In this study poly[N-(hydroxyphenyl)maleimide](PHPMI) was synthesized. The PHPMI were analyzed by H-NMR and FT-IR. The measured number average molecular weight of PHPMI was produced was $1.06{\times}10^4$. Poly[N-(formyloxyphenyl)maleimide](PFOMI) as a type of photo-Fries rearrangement was synthesized by NHPMI and formic acid followed by radical polymerization. PFOMI was analyzed by FT-IR, and photocharacteristics was investgated by UV spectra and FT-IR before and after UV irradiation. Based on the image characteristics of PFOMI measured from optical micrographs, it was formed that the resolution of positive type PFOMI was $0.5{\mu}m$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.329-333
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• 2012

For phase transition method, good record sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, a retention time is very important part for phase-transition. In our past papers, we chose composition of $Ge_1Se_1Te_2$ material to use a Se factor which has good optical sensitivity than conventional Sb. Sb/Ge-Se-Te thin films are fabricated and irradiated with UV light source to investigate a reversible phase change by Sb-doped condition. Because of Sb atoms, the Sb inserted sample showed better performance than conventional one. We should note that this novel one showed another possibility for phase-change random access memory.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.96-103
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• 1994

The GaAs epilayer was grown at low temperature (LT. 250.deg. C) by molecular beam epitaxy. The properties of the LTT GaAs, before and after Rapid Thermal Annealing(RTA), were analyzed by Reflection of High Energy Electron Diffraction (RHEED), Double Crystal X-ray(DCX), Raman spectroscopy, PL and Photo-Induced Current Transient Spectroscopy (PICTS). The LT GaAs before RTA, was analyzed by RHEED and DCX, with a result of an improved surface morphology under a relatively As-rich(As/Ga ratio :28) condition, and of an increased lattics parameter of 1.1 1.7% in comparison with a GaAs substrate. However DCX and Raman spectroscopy revealed that the expanded lattics parameter and the crystallinity of LT GaAs could be recovered after RTA. On the other hand, PL spectra indicated that LT GaAs after RTA showed low optical sensitivity unlike High Temperature(HT) GaAs, and that its surface morphology and crystallinity were corresponded with those of HT GaAs. Finally PICTS spectra proved the fact that low sensitivity of LT GaAs was due to the deep level defects (Ec-0.85eV) which were strogly formed by raising RTA temperature to 750.deg. C.

• Proceedings of the KOSOMBE Conference
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• v.1998 no.11
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• pp.303-304
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• 1998

We investigated the effects of scintillation crystal surface treatment on gamma camera imaging. The NaI(Tl) and CsI(Tl) (20 mm (dia.) $\times10mm$ (thick) plate) scintillators were chosen for this study. Two different surface treatments, white and black reflectors, were applied to NaI(Tl) and CsI(Tl). The optical properties of generated scintillation light were evaluated using Monte Carlo simulation and postion sensitive photo multiplier tube (PSPMT). We measured sensitivity, energy resolution and spatial resolution of a gamma camera system with the scintillators coupled to a PSPMT. Based on the results, we concluded that the careful consideration of surface treatments of the scintillator was necessary in order to develop the gamma camera having good sensitivity and spatial resolution.

• Journal of the Korea Computer Graphics Society
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• v.12 no.4
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• pp.23-32
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• 2006

In recent years, since the digital camera has been popularized, so users can easily collect hundreds of photos in a single usage. Thus the managing of hundreds of digital photos is not a simple job comparing to the keeping paper photos. We know that managing and classifying a number of digital photo files are burdensome and annoying sometimes. So people hope to use an automated system for managing digital photos especially for their own purposes. The previous studies, e.g. content-based image retrieval, were focused on the clustering of general images, which it is not to be applied on digital photo clustering and classification. Recently, some specialized clustering algorithms for images clustering digital camera images were proposed. These algorithms exploit mainly the statistics of time gap between sequent photos. Though they showed a quite good result in image clustering for digital cameras, still lots of improvements are remained and unsolved. For example the current tools ignore completely the image transformation with the different focal lengths. In this paper, we present a photo considering focal length information recorded in EXIF. We propose an algorithms based on MVA(Matching Vector Analysis) for classification of digital images taken in the every day activity. Our experiment shows that our algorithm gives more than 95% success rates, which is competitive among all available methods in terms of sensitivity, specificity and flexibility.