• Title/Summary/Keyword: photo sensitivity

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Sensitivity Enhancement in Solution NMR via Photochemically Induced Dynamic Nuclear Polarization

  • Im, Jonghyuk;Lee, Jung Ho
    • Journal of the Korean Magnetic Resonance Society
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    • v.21 no.1
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    • pp.1-6
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    • 2017
  • Enhancements in NMR sensitivity have been the main driving force to extend the boundaries of NMR applications. Recently, techniques to shift the thermally populated nuclear spin states are employed to gain high NMR signals. Here, we introduce a technique called photochemically induced dynamic nuclear polarization (photo-CIDNP) and discuss its progresses in enhancing the solution-state NMR sensitivity.

Photo-sensing Characteristics of VO2 Nanowires

  • Sohn, Ahrum;Kim, Eunah;Kim, Haeri;Kim, Dong-Wook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.197.1-197.1
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    • 2014
  • VO2 has intensively investigated for several decades due to its interesting physical properties, including metal-insulator transition (MIT), thermochromic and thermoelectric properties, near the room temperature. And also gas and photo sensing properties of VO2 nanowires have attracted increasing research interest due to the high sensitivity and multi-sensing capability. We studied the light-induced resistance change of VO2 nanowires. In particular, we have investigated plasmonic enhancement of the photo-sensing properties of the VO2 nanowires. To select proper wavelength, we performed finite-difference time-domain simulations of electric field distribution in the VO2 nanowires attached with Ag nanoparticles. Localized surface plasmon resonance (LSPR) is expected at wavelength of 560 nm. The photo-sensitivity was carefully examined as a function of the sample temperature. In the presentation, we will discuss physical origins of the photo-induced resistance change in VO2.

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Effect of Deposition Pressure on the Conductivity and Optical Characteristics of a-Si:H Films (증착 압력이 a-Si:H막의 전도도와 광학적 특성에 미치는 영향)

  • Jeon, Bup-Ju;Jung, Il-Hyun
    • Applied Chemistry for Engineering
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    • v.10 no.1
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    • pp.98-104
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    • 1999
  • In this work, we investigated hydrogen content, bond structure, and electrical properties of a-Si:H films prepared by ECR plasma CVD as a function of pressure. In general, the photo sensitivity of a-Si:H films prepared by CVD method decreases as the deposition rate increases, but the photo sensitivity of a-Si:H films prepared by ECR plasma deposition method increases as the deposition rate increases. In the same condition of microwave power, the ratio of $SiH_4/H_2$, and pressure, though film thickness increases linearly with deposition time and hydrogen content in the film is constant, photo conductivity can be decreased because $SiH_2$ bond is made more than SiH bond in the short reaction time. According to increase pressure in the chamber, SiH bond in the film increase and optical energy gap decrease. So, photo conductivity can be increased. But photo sensitivity decreased as dark conductivity increase. It must be grown in the condition of low pressure and hydrogen gas for taking the a-Si:H film of high quality.

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The Additive Effect of Polyoxyethylene Compounds on the Photographic Characters of Photographic Emulsion

  • Youn, Min-Young;Ahn, Hong-Chan;Kang, Tai-Sung
    • Journal of Photoscience
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    • v.7 no.2
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    • pp.45-46
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    • 2000
  • The polyoxyethylene compounds were added into the photographic emulsion during the physical ripening of photo sensitive silver halide crystal in this emulsion. The polyoxyethylene compounds improved the photographic properties of the film to a great extent increasing the photo sensitivity and decreasing the fog density.

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스퍼터링 법으로 증착한 CdS 박막의 광전도도 특성 평가

  • Heo, Seong-Gi;Jang, Dong-Mi;Choe, Myeong-Sin;An, Jun-Gu;Seong, Nak-Jin;Yun, Sun-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.81-81
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    • 2008
  • Applications of CdS films in this study are to exhibit a high conductivity when they are exposed at light with visible wavelength and sequentially to show a low conductivity in dark state. For this purpose, CdS films should have a high photosensitivity, still maintaining a high conductivity at a visible light. In this study, CdS films were prepared at room temperature on glass substrates by rf magnetron sputtering. In order to increase the photo-conductivity in visible light, various defect levels should be located within the CdS band gap. In order to nucleate the defect sites within the CdS band gap, CdS films were deposited on glass substrates at room temperature using various $H_2$/(Ar+$H_2$) flow ratios by an rf magnetron sputtering. Through the investigation of the structural and photoconductive properties of CdS films by an addition of hydrogen, the relationship between photo- and dark-resistance in CdS films was investigated in detail. 200-nm-thick CdS films for photoconductive sensor applications were prepared at various $H_2$/(Ar+$H_2$) flow ratios on glass substrates at room temperature by rf magnetron sputtering. Sulfur concentration in CdS films crystallized at room temperature with (002) preferred orientation depends directly on the hydrogen atmosphere and the surface roughness of the films gradually increases with increasing hydrogen atmosphere. Films deposited at 8% of $H_2$/(Ar+$H_2$) exhibit an abrupt decrease of dark- and photo-resistance, showing a low photo-sensitivity ($R_{dark}/R_{photo}$). Onthe other hand, films deposited at a hydrogen atmosphere of 42% exhibit a photo-sensitivity of $5\times10^3$, maintaining a photo-resistance of an approximately $2\times10^4\Omega$/square. The dark- and photo-resistance values of CdS films were related with a composition, surface roughness, and defect sites within the band gap.

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Fabrication and Characterization of Photo-Sensors for Very Small Scale Image System (초소형 영상시스템을 위한 광센서 제조 및 특성평가)

  • Shin, K.S.;Paek, K.K.;Lee, Y.S.;Lee, Y.H.;Park, J.H.;Ju, B.K.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.04a
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    • pp.187-190
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    • 2000
  • We fabricated general photo diode, surface etched photo diode and floating gate MOSFET by CMOS process. In a design stage, we expect that surface etched photo diode will be improved as to photo sensitivity. However, because the surface of silicon was damaged in etching process, the surface etched diode had a high dark current as well as low photo current level. Finally, we examined the current-voltage properties for the floating gate MOSFET on n-well and confirmed that the device can be act as an efficient photo-sensor. The floating gate MOSFET was operated in parasitic bipolar transistor mode.

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8-Parents Diallel Cross Analysis on Heading Date of Barley (이면교잡에 의한 대맥품종의 출수기 유전에 관한 연구)

  • Chung-Tae Young
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.22 no.2
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    • pp.71-79
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    • 1977
  • In order to obtain the basic information on the response of different day-length to heading date and on the inheritance of heading date of barley varieties. the 8 parents F$_1$ diallel crosses were tested with 4 different day-length. Varietal differences in photo-sensitivity were observed and Haganemugi was the most photo-insensitive variety. The inheritance of earliness were appeared to be partial dominance or partial ressesive and the inheritance of photo-insensitivity over photo-sensitivity were controlled by the single ressesive factor.

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Hydrogen-Dependent Catalytic Growth of Amorphous-Phase Silicon Thin-Films by Hot-Wire Chemical Vapor Deposition (HWCVD를 이용한 Amorphous Si 박막 증착공정에서 수소량에 따른 박막성장 특성)

  • Park, Seungil;Ji, Hyung Yong;Kim, MyeongJun;Kim, Keunjoo
    • Current Photovoltaic Research
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    • v.1 no.1
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    • pp.27-32
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    • 2013
  • We investigated the growth mechanism of amorphous-phase Si thin films in order to improve the film characteristics and circumvent photo-degradation effects by implementation of hot-wire chemical vapor deposition. Amorphous silicon thin films grown in a silane/hydrogen mixture can be decomposed by a resistive heat filament. The structural properties were observed by Raman spectroscopy, FTIR, SEM, and TEM. The electrical properties of the films were measured by photo-conductivity, dark-conductivity, and photo-sensitivity. The contents of Si-H and $Si-H_n$ bonds were measured to be 19.79 and 9.96% respectively, at a hydrogen flow rate of 5.5 sccm, respectively. The thin film has photo-sensitivity of $2.2{\times}10^5$ without a crystalline volume fraction. The catalyst behavior of the hot-wire to decompose the chemical precursors by an electron tunneling effect depends strongly on the hydrogen mixture rate and an amorphous Si thin film is formed from atomic relaxation.

Validation of Photo-comet Assay as a Model for the Prediction of Photocarcinogenicity

  • Kim, Ji-Young;Koh, Woo-Suk;Lee, Mi-Chael
    • Toxicological Research
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    • v.22 no.4
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    • pp.423-429
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    • 2006
  • Recent reports on the photocarcinogenicity and photogerotoxicity of many compounds led to an increasing awareness for the need of a standard approach to test for photogenotoxicity. The comet assay has been recently validated as a sensitive and specific test system for the quantification of DNA damage. Thus, the objectives of this study are to investigate the utility of photo-comet assay for detecting photo-mutagens, and to evaluate its ability to predict rodent photo-carcinogenicity. Photo-comet assays were performed using L5178Y $Tk^{+/-}$ mouse lymphoma cells on five test substances (8-methoxypsoralen, chlorpromazine, lomefloxacin, anthracene and retinoic acid) that demonstrated positive results in photocarcinogenicity tests. For the best discrimination between the test substance-mediated DNA damage and the undesirable DNA damage caused by direct UV absorption, a UV dose-response of the cells in the absence of the test substances was firstly fnalized. Out of 5 test substances, positive comet results were obtained for chlorpromazine, lomefloxacin, anthracene and retinoic acid while 8-methoxypsoralen found negative. An investigation into the predictive value of this photo-comet assay for determining the photocarcinogenicity showed that photo-comet assay has relatively high sensitivity. Therefore, the photo-comet assay with mammalian cells seems to be a good and sensitive predictor of the photocarcinogenic potential of new substances.

Assessment of Sensitivity of Photo-Chromosomal Assay in the Prediction of Photo-carcinogenicity (광염색체이상시험의 광발암성 예측능력에 대한 평가)

  • Hong Mi-Young;Kim Ji-Young;Lee Young Mi;Lee Michael
    • Toxicological Research
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    • v.21 no.2
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    • pp.99-105
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    • 2005
  • Photo-mutagenic compounds have been known to alter skin cancer rates by acting as initiators or by affecting subsequent steps in carcinogenesis. The objectives of this study are to investigate the utility of photo-chromosomal aberration (photo-CA) assay for detecting photo-clastogens, and to evaluate its ability to predict rodent photocarcinogenicity. Photo-CA assay was performed with five test substances that demonstrated positive results in photo-carcinogenicity tests: 8-Methoxypsoralen (photoactive substance that forms DNA adducts in the presence of ultraviolet A irradiation), chlorpromazine (an aliphatic phenothiazine an alpha-adrenergic blocking agent), lomefloxacin (an antibiotic in a class of drugs called fluoroquinolones), anthracene (a tricyclic aromatic hydrocarbon a basic substance for production of anthraquinone, dyes, pigments, insecticides, wood preservatives and coating materials) and Retinoic acid (a retinoid compound closely related to vitamin A). For the best discrimination between the test substance-mediated genotoxicity and the undesirable genotoxicity caused by direct DNA absorption, a UV dose-response of the cells in the absence of the test substances was firstly analyzed. All 5 test substances showed a positive outcome in photo-CA assay, indicating that the photo-CA test is very sensitive to the photo-genotoxic effect of UV irradiation. With this limited data-set, an investigation into the predictive value of this photo-CA test for determining the photo-carcinogenicity showed that photo-CA assay has the high ability of a test to predict carcinogenicity. Therefore, the photo-CA test using mammalian cells seems to be a sensitive method to evaluate the photo-carcinogenic potential of new compounds.