• 한국자기공명학회논문지
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• 제21권1호
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• pp.1-6
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• 2017

Enhancements in NMR sensitivity have been the main driving force to extend the boundaries of NMR applications. Recently, techniques to shift the thermally populated nuclear spin states are employed to gain high NMR signals. Here, we introduce a technique called photochemically induced dynamic nuclear polarization (photo-CIDNP) and discuss its progresses in enhancing the solution-state NMR sensitivity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.197.1-197.1
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• 2014

VO2 has intensively investigated for several decades due to its interesting physical properties, including metal-insulator transition (MIT), thermochromic and thermoelectric properties, near the room temperature. And also gas and photo sensing properties of VO2 nanowires have attracted increasing research interest due to the high sensitivity and multi-sensing capability. We studied the light-induced resistance change of VO2 nanowires. In particular, we have investigated plasmonic enhancement of the photo-sensing properties of the VO2 nanowires. To select proper wavelength, we performed finite-difference time-domain simulations of electric field distribution in the VO2 nanowires attached with Ag nanoparticles. Localized surface plasmon resonance (LSPR) is expected at wavelength of 560 nm. The photo-sensitivity was carefully examined as a function of the sample temperature. In the presentation, we will discuss physical origins of the photo-induced resistance change in VO2.

• 공업화학
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• 제10권1호
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• pp.98-104
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• 1999

본 연구에서는 ECR플라즈마 화학증착법을 이용하여 반응기내 압력의 변화에 따라 수소화된 무정형 실리콘막을 증착하고 박막내 수소의 함량과 결합구조 및 전기적 특성을 조사하였다. 일반적인 CVD에 의해 제조된 a-Si:H막은 증착속도가 증가할수록 광감도는 감소하지만 ECR플라즈마의 경우 증착속도가 증가할수록 광감도가 향상되었다. 마이크로파 출력과 사일렌/수소 희석비, 반응기내 압력등이 동일한 실험 조건에서 증착시간에 따른 막의 두께는 선형적으로 증가하고 막내에 함유된 수소의 농도는 일정하지만, 반응시간이 짧은 경우 막내에 $SiH_2$결합이 SiH결합보다 많이 형성되어 광전도도를 저하시킬 수 있다. 반응기내 압력이 증가함에 따라 박막내에 SiH결합이 증가하여 광학 에너지 갭을 줄여 광전도도를 향상시킬 수 있었으나 암전도도의 증가로 광감도는 감소하였다. 따라서 양질의 박막을 얻기 위해서는 압력이 낮고 수소기체의 양이 적은 조건에서 성장시켜야 한다.

• Journal of Photoscience
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• 제7권2호
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• pp.45-46
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• 2000

The polyoxyethylene compounds were added into the photographic emulsion during the physical ripening of photo sensitive silver halide crystal in this emulsion. The polyoxyethylene compounds improved the photographic properties of the film to a great extent increasing the photo sensitivity and decreasing the fog density.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.81-81
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• 2008

Applications of CdS films in this study are to exhibit a high conductivity when they are exposed at light with visible wavelength and sequentially to show a low conductivity in dark state. For this purpose, CdS films should have a high photosensitivity, still maintaining a high conductivity at a visible light. In this study, CdS films were prepared at room temperature on glass substrates by rf magnetron sputtering. In order to increase the photo-conductivity in visible light, various defect levels should be located within the CdS band gap. In order to nucleate the defect sites within the CdS band gap, CdS films were deposited on glass substrates at room temperature using various $H_2$/(Ar+$H_2$) flow ratios by an rf magnetron sputtering. Through the investigation of the structural and photoconductive properties of CdS films by an addition of hydrogen, the relationship between photo- and dark-resistance in CdS films was investigated in detail. 200-nm-thick CdS films for photoconductive sensor applications were prepared at various $H_2$/(Ar+$H_2$) flow ratios on glass substrates at room temperature by rf magnetron sputtering. Sulfur concentration in CdS films crystallized at room temperature with (002) preferred orientation depends directly on the hydrogen atmosphere and the surface roughness of the films gradually increases with increasing hydrogen atmosphere. Films deposited at 8% of $H_2$/(Ar+$H_2$) exhibit an abrupt decrease of dark- and photo-resistance, showing a low photo-sensitivity ($R_{dark}/R_{photo}$). Onthe other hand, films deposited at a hydrogen atmosphere of 42% exhibit a photo-sensitivity of $5\times10^3$, maintaining a photo-resistance of an approximately $2\times10^4\Omega$/square. The dark- and photo-resistance values of CdS films were related with a composition, surface roughness, and defect sites within the band gap.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.187-190
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• 2000

We fabricated general photo diode, surface etched photo diode and floating gate MOSFET by CMOS process. In a design stage, we expect that surface etched photo diode will be improved as to photo sensitivity. However, because the surface of silicon was damaged in etching process, the surface etched diode had a high dark current as well as low photo current level. Finally, we examined the current-voltage properties for the floating gate MOSFET on n-well and confirmed that the device can be act as an efficient photo-sensor. The floating gate MOSFET was operated in parasitic bipolar transistor mode.

• 한국작물학회지
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• 제22권2호
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• pp.71-79
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• 1977

대맥품종들의 일장에 따른 출수반응과 출수기에 대한 유전을 구명코져 1974연부터 1975연까지 조숙품종으로 올보리, Haganemugi, CI 6332, 중숙품종으로 수원 18호, 부여, 만숙품종으로 수원004, 수원 16005, Samheung을 상호교배하여 만든 Diallelcross F$_1$을 호남작물시험장온실에 파종, 24시간, 16시간 12시간 및 8시간 일장을 각각 처리실험하였던바 그 결과를 요약하면 다음과 같다. 1. Haganemugi, CI 6332는 출수기에 관여하는 순수조만성이 짧은 품종이었고 수원004는 순수조만성이 긴 품종이었다. 2. 품종의 출수기 변이폭은 12시간 일장에서 가장 컸으며 Haganemugi는 다른 품종에 비하여 일장반응이 둔감하였다. 3. 대맥의 순수조만성은 부분우성인 대립유전자에 지배되고 조숙이 우성(CI6332), 또는 열성(Haganemugi)으로 작용하였다. 4. 일장반응에 대한 db전은 비감광성이 감광성에 대하여 단순열성으로 나타났고, Haganemugi가 비감광성유전자를 가지고 있으며 이 유전자는 12시간 일장근처에서 다른 품종의 일장감응성과 구별되었다. 5. 대맥품종에 있어서 일장감응성은 각 품종별로 특별한 Turning point가 있는 것으로 추측되었다.

• Current Photovoltaic Research
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• 제1권1호
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• pp.27-32
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• 2013

We investigated the growth mechanism of amorphous-phase Si thin films in order to improve the film characteristics and circumvent photo-degradation effects by implementation of hot-wire chemical vapor deposition. Amorphous silicon thin films grown in a silane/hydrogen mixture can be decomposed by a resistive heat filament. The structural properties were observed by Raman spectroscopy, FTIR, SEM, and TEM. The electrical properties of the films were measured by photo-conductivity, dark-conductivity, and photo-sensitivity. The contents of Si-H and $Si-H_n$ bonds were measured to be 19.79 and 9.96% respectively, at a hydrogen flow rate of 5.5 sccm, respectively. The thin film has photo-sensitivity of $2.2{\times}10^5$ without a crystalline volume fraction. The catalyst behavior of the hot-wire to decompose the chemical precursors by an electron tunneling effect depends strongly on the hydrogen mixture rate and an amorphous Si thin film is formed from atomic relaxation.

• Toxicological Research
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• 제22권4호
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• pp.423-429
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• 2006

Recent reports on the photocarcinogenicity and photogerotoxicity of many compounds led to an increasing awareness for the need of a standard approach to test for photogenotoxicity. The comet assay has been recently validated as a sensitive and specific test system for the quantification of DNA damage. Thus, the objectives of this study are to investigate the utility of photo-comet assay for detecting photo-mutagens, and to evaluate its ability to predict rodent photo-carcinogenicity. Photo-comet assays were performed using L5178Y $Tk^{+/-}$ mouse lymphoma cells on five test substances (8-methoxypsoralen, chlorpromazine, lomefloxacin, anthracene and retinoic acid) that demonstrated positive results in photocarcinogenicity tests. For the best discrimination between the test substance-mediated DNA damage and the undesirable DNA damage caused by direct UV absorption, a UV dose-response of the cells in the absence of the test substances was firstly fnalized. Out of 5 test substances, positive comet results were obtained for chlorpromazine, lomefloxacin, anthracene and retinoic acid while 8-methoxypsoralen found negative. An investigation into the predictive value of this photo-comet assay for determining the photocarcinogenicity showed that photo-comet assay has relatively high sensitivity. Therefore, the photo-comet assay with mammalian cells seems to be a good and sensitive predictor of the photocarcinogenic potential of new substances.

• Toxicological Research
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• 제21권2호
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• pp.99-105
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• 2005

Photo-mutagenic compounds have been known to alter skin cancer rates by acting as initiators or by affecting subsequent steps in carcinogenesis. The objectives of this study are to investigate the utility of photo-chromosomal aberration (photo-CA) assay for detecting photo-clastogens, and to evaluate its ability to predict rodent photocarcinogenicity. Photo-CA assay was performed with five test substances that demonstrated positive results in photo-carcinogenicity tests: 8-Methoxypsoralen (photoactive substance that forms DNA adducts in the presence of ultraviolet A irradiation), chlorpromazine (an aliphatic phenothiazine an alpha-adrenergic blocking agent), lomefloxacin (an antibiotic in a class of drugs called fluoroquinolones), anthracene (a tricyclic aromatic hydrocarbon a basic substance for production of anthraquinone, dyes, pigments, insecticides, wood preservatives and coating materials) and Retinoic acid (a retinoid compound closely related to vitamin A). For the best discrimination between the test substance-mediated genotoxicity and the undesirable genotoxicity caused by direct DNA absorption, a UV dose-response of the cells in the absence of the test substances was firstly analyzed. All 5 test substances showed a positive outcome in photo-CA assay, indicating that the photo-CA test is very sensitive to the photo-genotoxic effect of UV irradiation. With this limited data-set, an investigation into the predictive value of this photo-CA test for determining the photo-carcinogenicity showed that photo-CA assay has the high ability of a test to predict carcinogenicity. Therefore, the photo-CA test using mammalian cells seems to be a sensitive method to evaluate the photo-carcinogenic potential of new compounds.