• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.208-211
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• 2000

We prepared Co-Cr-Ta and Co-Cr-Ta/Ti thin film for perpendicular magnetic recording media by facing targets sputtering system (FTS system). Ti underlayer effects on crystallographic and magnetic characteristics of Co-Cr-Ta perpendicular magnetic recording media have been investigated. Crystallgraphic and magnetic characteristic of prepared thin films were evaluated by x-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement. The coercivity and anisotropy field increase by introduced Ti underlayer when substrate temperature is higher than 150$^{\circ}C$. The c-axis dispersion angle and grain size of Co-Cr-Ta/Ti thin film is decrease than Co-Cr-Ta when substrate temperature is higher than 100$^{\circ}C$. Consequently, the use of a Ti underlayer highly orientated can be improved crystallographic and magnetic characteristics of Co-Cr -Ta perpendicular media layer.

• Journal of Magnetics
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• v.19 no.3
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• pp.237-240
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• 2014

For heat-assisted magnetic recording, magnetization reversal probabilities of nano-Pt/MnSb multilayer film with perpendicular magnetic anisotropy under thermal pulse activation were investigated numerically by solving the Landau-Lifshift Gilbert Equation. Magnetic parameters of nano-Pt/MnSb multilayer were used with anisotropy energy of $3{\times}10^5$ erg/cc and saturation magnetization of 2100 G, which offer more than 10 y data stability at room temperature. Scheme of driven magnetic field and thermal pulse on writing mechanism was designed closely to real experiment. This study found that the chosen material is potential to be used as a high density magnetic storage that requires low writing field less than two-hundreds Oersted through definite heating and cooling interval. The possibility of writing data with a zero driven magnetic field also became an important result. Further study is recommended on the thickness of media and thermal pulse design as the essential parameters of the reversal magnetization.

• Journal of Magnetics
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• v.2 no.1
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• pp.22-24
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• 1997

FeN thin films were deposited by RF-reactive diode sputtering to investigate magnetic characteristics variation due to substrate tilt during the film deposition, and their magnetic properties were measured by VSM, SEM and AFM. When the substrate tilt pivot edges were parallel to the applied field, the magnetic anisotropy was increased When the substrate tilt pivot edges were perpendicular to the applied field, the easy magnetization axis became the hard magnetization axis, and the hard axis became the easy axis as the tilt angles were increased. The reason is believed to be due to the fact that the tilt induced shape magnetic anisotropy became larger than the field induced magnetic anisotropy by DC magnetic field as the crystal grains are enlongated along the substrate tilt pivot edges due to "oblique incidence anisotropy" commonly found in eveporated thin films.

• Journal of Magnetics
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• v.11 no.2
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• pp.70-73
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• 2006

The magnetization angle and thickness dependence of magnetic anisotropy in the exchange-biased [Pd/Co]${\times}$5/FeMn multilayers with an out-of-plane anisotropy were investigated to determine the origin of perpendicular exchange biasing. As the Co thickness increased to 1.5 nm in the [Pd(0.8 nm)/Co(t)]${\times}$5/FeMn(120 nm) films, the hysteresis loops were converted from square loops at a thin Co (<0.4 nm) to complicated round ones at a thick Co. The irregularly asymmetric step (IAS) at the left top of the loop appeared in the loop of the 0.6-nm Co film due to an inhomogeneity in the exchange anisotropy. As the Pd thickness increased to 1.6 nm, the step disappeared, and the perpendicular magnetic anisotropy was maximized in the Co thickness between 0.6 and 0.9 nm. The conversion of the magnetization loop along the magnetization angle coincided with the equation $H_{(eff)}=H_o\;cos{\theta}$. The IAS of the 0.8-nm Pd film disappeared after thermal annealing up to $200^{\circ}C$ under an external magnetic field.

• Journal of the Korean Magnetics Society
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• v.14 no.4
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• pp.127-130
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• 2004

Magnetic properties and thermal stability by exchange biased perpendicular magnetic anisotropy in (Pd/Co)$_{N}$FeMn multilayer deposited by do magnetron sputtering system are investigated. We measured the perpendicular magnetization curves of (Pd(0.8nm)/Co(0.8nm)$_{5}$FeMn multilayer as function of FeMn thickness and annealing temperature. As FeMn thickness increases from 0 to 21nm, the perpendicular exchange bias(Hex) obtained 127 Oe at FeMn thickness 15nm. As the annealing temperature increases to 24$0^{\circ}C$, the E$_{ex}$ increased from 115 Oe to 190 Oe and disappeared exchange biased perpendicular magnetic anisotropy effect at 33$0^{\circ}C$.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.200.2-200.2
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• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.288-288
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• 2009

We have studied polarity effects of dielectric anisotropy effects on electro-optical characteristics of a twisted nematic mode driven by fringe electric field, which has wide viewing angle characteristics. Our device is designed as normally black mode between parallel polarizers. The perfect polarization conversion of incident light, which passes through a polarizer, is achieved, when it passes through the twisted liquid crystal (LC) layer. If an electric field is applied, the LC molecules with a positive (or negative) dielectric anisotropy rotate parallel (or perpendicular) to the horizontal component of a fringe electric field as increasing transmittance. From the calculated results, enhanced transmittance of the fringe field-twisted nematic (FF-TN) mode with positive dielectric anisotropy of + 8.2 can be obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.720-725
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• 2002

The fringe-field switching (FFS) mode was known to exhibit both a wide viewing angle and high transmittance, especially when using the liquid crystal (LC) with negative dielectric anisotropy. In the device, the LC director rotates almost in-plane. However, in the bright state the device shows bluish and yellowish color along parallel and perpendicular to the LC director at off-normal directions since the LC director rotates only in one direction. Such a problem was greatly improved using a wedge shape of only pixel electrodes. In this way two different field directions exist in a pixel, enabling the LC director to rotate in two opposite directions. Consequently, owing to dual domain effect when using the LC with negative dielectric anisotropy, the viewing angle characteristics are greatly improved.

• Progress in Superconductivity
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• v.12 no.1
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• pp.36-40
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• 2010

We have studied the anisotropy of the London penetration depth of carbon doped $MgB_2$ single crystals, which was obtained from reversible magnetization measurements with the magnetic field both parallel and perpendicular to the c-axis. Similar to the pure $MgB_2$, the anisotropy of the upper critical field ${\gamma}_H$ decrease with temperature while the anisotropy of the London penetration depth ${\gamma}_{\lambda}$ slowly increases with temperature. However, the temperature dependence of ${\gamma}_H$ is drastically reduced and the value of ${\gamma}_{\lambda}$ becomes nearly ~1 as C is introduced. These results indicate that C substitution increases impurity scattering mainly in the $\sigma$ bands. The temperature dependence of the anisotropies agree well with the theoretical predictions with impurity scattering.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.791-795
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• 2000

Amorphous chalcogenide glasses have a wide variety of light-induced effects. In this study, we have investigated the diffraction efficiency of chalcogenide. As$_{40}$ Ge$_{10}$ Se$_{15}$ S$_{35}$ thin films by the various applied electric fields. The holographic grating in these thin films has been formed using a linearly polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two method of applied electric field in the perpendicular and parallel to the direction of inducing beam. We obtained that properties of diffraction efficiency in the two methods of applied electric field. The result is shown that the diffraction efficiency of parallel electric field is 285% increase, η=1.1$\times$10$^{-3}$ and the diffraction efficiency of perpendicular electric field is 80% decrease, η=9.83$\times$10$^{-5}$ . Also, we have investigated the anisotropy property on chalcogenide thin films by the electric field effects.