• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.219.2-219.2
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.237.1-237.1
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• 2008

• Proceedings of the Korean Magnestics Society Conference
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• 2016.11a
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• pp.193-194
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• 2016

• Proceedings of the Korean Magnestics Society Conference
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• 1995.10a
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• pp.26-27
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• 1995

• Journal of Magnetics
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• v.14 no.3
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• pp.104-107
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• 2009

The effects of the magnetic property variation on current-induced magnetization switching in magnetic tunnel junction with perpendicular magnetic anistoropy (PMA) and the soft magnetic polarization-enhancement layers (PELs) inserted between the layers with PMA and the MgO layer was studied. A micromatnetic model was used to estimate the switching time of the free layer by different applied current densities, with changing saturation magnetization ($M_s$) of the PELs, interlayer exchange coupling between PMA layers and PELs. The switching time could be significantly reduced at low current densities, by increasing $M_s$ of PELs and decreasing interlayer exchange coupling.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.802-805
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• 2000

Anistropic [Ta/NdFeB/Ta] thin film was sputtered on heated Si substrate by Nd$\_$17/Fe$\_$74/B$\_$9/ target. The grain size of the films increased according to the increase of substrate temperature, and the film deposited at 650$^{\circ}C$ showed optimum coercivity. 4$\pi$M$\_$r/, $\_$i/H$\_$c/ and (BH)$\_$max/ measured perpendicular to the film plane of thin film deposited at 650$^{\circ}C$ are 12.3 kG, 9.9 kOe and 37 MGOe, respectivly.

• Journal of the Korean Vacuum Society
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• v.21 no.5
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• pp.279-285
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• 2012

We report on the measurements of electronic transport properties of CVD graphene placed on a pre-patterned substrate with periodic nano trenches. A strong anisotropy has been observed between the transport parallel and perpendicular to the trenches. Characteristically different weak localization corrections have been also observed when the transport was perpendicular to the trench, which is interpreted as due to a density inhomogeneity generated by the potential modulations.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.61-64
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• 2000

$^{11}$B NMR measurements have been performed to investigate local electronic structure and 4f spin dynamics for TbNi$_2$B$_2$C single crystal. $^{11}$B NMR spectra show three resonance peaks due to the quadrupolar interaction. Shift and linewidth are huge and strongly temperature-dependent. In addition, both are proportional to magnetic susceptibility, indicating that the hyperfine field at the boron site originates from the 4f spins of Tb. $^{11}$B NMR shift and relaxation rates show high anisotropy for field parallel and perpendicular to the c-axis. Anisotropy of the shift and the relaxation rates suggests that the hyperfine field perpendicular to the c-axis is larger.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.791-795
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• 2000

Amorphous chalcogenide glasses have a wide variety of light-induced effects. In this study, we have investigated the diffraction efficiency of chalcogenide. As$_{40}$ Ge$_{10}$ Se$_{15}$ S$_{35}$ thin films by the various applied electric fields. The holographic grating in these thin films has been formed using a linearly polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two method of applied electric field in the perpendicular and parallel to the direction of inducing beam. We obtained that properties of diffraction efficiency in the two methods of applied electric field. The result is shown that the diffraction efficiency of parallel electric field is 285% increase, η=1.1$\times$10$^{-3}$ and the diffraction efficiency of perpendicular electric field is 80% decrease, η=9.83$\times$10$^{-5}$ . Also, we have investigated the anisotropy property on chalcogenide thin films by the electric field effects.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.528-532
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• 1995

Ferromagnetic resonance experiments have been used to investigate the magnetic properties of amorphous $Co_{89.5}Zr_{10.5}$ thin films deposited by DC magnetron sputtering method. In the thickness range from $350\;{\AA}$ to $3,200\;{\AA}$, measurements were carried out in a static magnetic field perpendicular and parallel to the film plane and in a conventional 9.44 GHz spectrometer at room temperature. The ferromagnetic resonance spectra by the field perpendicular to the film plane showed standing spin wave. The spacing and the relative intensities between the various spin wave resonance peaks are analysed considering surface magnetic anisotropy. The surface magnetic anisotropy constant ($K_{so},\;K_{sd}$) of amorphous $Co_{89.5}Zr_{10.5}$ thin films are $0.02\;erg/\textrm{cm}^2$ and $0.55\;erg/\textrm{cm}^2$ respectively regardless of the film thickness except for $3,200\;{\AA}$ film. In case of $3,200\;{\AA}$ these values are $0.46\;erg/\textrm{cm}^2$ and $0.55\;erg/\textrm{cm}^2$ respectively.