• The Korean Journal of Physiology and Pharmacology
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• v.11 no.1
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• pp.1-7
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• 2007

Altered environmental gravity, including both hypo- and hypergravity, may result in space adaptation syndrome. To explore the characteristics of this adaptive plasticity, the expression of immediate early gene c-fos mRNA in the vestibular related tissues following an exposure to hypergravity stimulus was determined in rats. The animals were subjected to a force of 2 g (twice earth's gravity) for 1, 3, or 12 h, and were examined poststimulus at 0, 2, 6, 12, and 24 h. RT-PCR (reverse transcription polymerase chain reaction) and real-time quantitative RT-PCR were adopted to analyze temporal changes in the expression of c-fos mRNA. The hypergravity stimulus increased the expression of c-fos mRNA in the vestibular ganglion, medial vestibular nucleus, inferior vestibular nucleus, hippocampus, cerebellum, and cortex. The peak expression occurred at 0 h poststimulation in animals stimulated with hypergravity for 1 h, and at 6 h poststimulus in those stimulated for 3 h. In contrast, those stimulated for 12 h exhibited dual peaks at 0 and 12 h poststimulus. Bilateral labyrinthectomy markedly attenuated the degree of c-fos mRNA expression. Glutamate receptor antagonist also dramatically attenuated the degree of c-fos mRNA expression. These results indicate that expression of c-fos mRNA in response to hypergravity occurs in the vestibular related tissues of the central nervous system, in which peripheral vestibular receptors and glutamate receptors play an important role. The temporal pattern of c-fos mRNA expression depended on the duration of the hypergravity stimulus.

• Journal of Biomedical Engineering Research
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• v.35 no.5
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• pp.125-131
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• 2014

The purpose of this study is to verify the utility of reflected photoplethysmography sensor using two green light emitting diodes that influenced by ambient light. Recently it has been studied that green light emitting diode is suitable for light source of reflected photoplethysmography sensor at low temperature and high temperature. Another study showed that, green light is better for monitoring heart rate during motion than led light. However, it has a bad characteristic about ambient light noise. To verify the utility of reflected photoplethysmography sensor using green light emitting diode, this study measures the photoplethysmography signal that is distorted by ambient light and will propose a solution. This study has two parts of research method. One is measurement system that composed sensor and board. The sensor is made up PE-foam and Non-woven fabric for flexible sensor. The photoplethysmography signal is measured by measurement board that composed high-pass filter, low-pass filter and amplifier. Ambient light source is light bulb and white light emitting diode that has three steps brightness. Photoplethysmography signal is measured with lead II electrocardiography signal at the same time and it is measured at the finger and radial artery for 1 minute, 1000 Hz sampling rate. The lead II electrocardiography signal is a standard signal for heart rate and photoplethysmography signal that measured at the finger is a standard signal for waveform. The test is repeated 3 times using three sensor. The data is processed by MATLAB to verify the utility by comparing the correlation coefficient score and heart rate. The photoplethysmography sensor using two green light emitting diodes is shown better utility than using one green light emitting diode and red light emitting diode at the ambient light. The waveform and heart rate that measured by two green light emitting diodes are more identical than others. The amount of electricity used is less than red light emitting diode and error peak detectability factor is the lowest.

• Nuclear Engineering and Technology
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• v.50 no.3
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• pp.356-367
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• 2018

A series of tests dedicated to station blackout (SBO) accident scenarios have been recently performed at the $Prim{\ddot{a}}rkreislauf-Versuchsanlage$ (primary coolant loop test facility; PKL) facility in the framework of the OECD/NEA PKL-3 project. These investigations address current safety issues related to beyond design basis accident transients with significant core heat up. This work presents a detailed analysis using the best estimate thermal-hydraulic code TRACE (v5.0 Patch4) of different SBO scenarios conducted at the PKL facility; failures of high- and low-pressure safety injection systems together with steam generator (SG) feedwater supply are considered, thus calling for adequate accident management actions and timely implementation of alternative emergency cooling procedures to prevent core meltdown. The presented analysis evaluates the capability of the applied TRACE model of the PKL facility to correctly capture the sequences of events in the different SBO scenarios, namely the SBO tests H2.1, H2.2 run 1 and H2.2 run 2, including symmetric or asymmetric secondary side depressurization, primary side depressurization, accumulator (ACC) injection in the cold legs and secondary side feeding with mobile pump and/or primary side emergency core coolant injection from the fuel pool cooling pump. This study is focused specifically on the prediction of the core exit temperature, which drives the execution of the most relevant accident management actions. This work presents, in particular, the key improvements made to the TRACE model that helped to improve the code predictions, including the modeling of dynamical heat losses, the nodalization of SGs' heat exchanger tubes and the ACCs. Another relevant aspect of this work is to evaluate how well the model simulations of the three different scenarios qualitatively and quantitatively capture the trends and results exhibited by the actual experiments. For instance, how the number of SGs considered for secondary side depressurization affects the heat transfer from primary side; how the discharge capacity of the pressurizer relief valve affects the dynamics of the transient; how ACC initial pressure and nitrogen release affect the grace time between ACC injection and subsequent core heat up; and how well the alternative feeding modes of the secondary and/or primary side with mobile injection pumps affect core quenching and ensure stable long-term core cooling under controlled boiling conditions.

• Korean Journal of Soil Science and Fertilizer
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• v.34 no.2
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• pp.85-91
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• 2001

To find diagnosing method of nitrogen status in tomato plant for determining optimum application rate of side dress, chlorophyll reading values were measured by portable chlorophyll meter(SPAD 502, Minolta), and compared with nitrogen supplying capability of soils. Regression between dry weight, amount of nitrogen uptake, and chlorophyll reading at stalk positions of tomato grown on the condition of no fertilization were evaluated For 6 green house soils with different nitrate concentrations ranged from $55mg\;kg^{-1}$ to $306mg\;kg^{-1}$. The chlorophyll reading of tomato leave was significantly correlated with amount of nitrogen per unit area of leave suggesting that chlorophyll content is useful for nitrogen diagnosis of tomato plant. The chlorophyll reading showed peak at the 15th leaf of stalk position on the 45th days after transplanting and this suggested that below or near the 15th leaf and before or near the 45th days after transplanting is the critical stalk position and time for diagnosing nitrogen status of tomato by chlorophyll test. The chlorophyll reading at the 14th leaf on the 40th days after transplanting was significantly correlated with soil nitrate status, dry weight and amount of nitrogen uptake by tomato grown with no fertilization. From the above correlation, the chlorophyll reading value of 57.1 at the 14th leaf of tomato was estimated as the critical level for maximum dry weight and amount of nitrogen uptake by tomato grown with no fertilization. Consequently, chlorophyll reading of tomato leaves measured by portable chlorophyll meter was thought to be available as a rapid plant test for predicting the nitrogen supplying capability of green house soils.

• Korean Journal of Soil Science and Fertilizer
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• v.27 no.1
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• pp.48-53
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• 1994

This study was conducted to find out the influence of single and/or repeatedly combined application of cellulose and chlorotharonil(TPN) on bacterial population and dissipation of these chemicals by microorganism in the soil suspension culture. 1. The number of total bacteria and Gram-negative bacteria were rapidly increased for 1st week, after the time, decreased in the single application but maintained in repeatedly combined application for 5th week and that were higher at combined application of TPN and cellulose than at single application of these. 2. TPN-degrading bacteria were gradually increased by the repeated application of TPN, and elevated the increasing extents of those with the repeatedly combined application of cellulose with TPN. 3. Cellulose-degrading bacteria showed the peak at 1st week, and was increased in the repeated application of cellulose, but the bacteria was decreased in the repeatedly application of TPN with cellulose. 4. The dissipation of TPN were faster at the combined application of both than at the single application of TPN, wheras that was delayed by the repeatedly combined application. 5. The content of reducing sugar was rapidly increased at 1st week and after 4th week except for the TPN single application, that was higher in the combind application than the cellulose single, but there was no difference between them.

• Journal of Korean Society of Transportation
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• v.28 no.5
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• pp.55-64
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• 2010

In order to prepare an efficient solution for PM10 reduction in underground stations, the authors measured PM10 concentration levels every 30 minutes in the concourse, platform, and tunnel of Gaehwasan Station of Seoul's subway line 5. Through a correlation analysis of each changing pattern of PM10 concentration, the direction and velocity of diffusion in underground stations were estimated. The PM10 concentration levels were highest in the tunnel, followed by the platform and concourse. PM10 concentrations in the tunnel, platform, and concourse showed a pattern of increasing in the rush hours and decreasing in the non-rush hours. According to the statistical analysis of PM10 concentrations and changing patterns in each location, the higher PM10 concentration in the tunnel expanded to the platform, and some from the platform expanded to the concourse. Therefore, to efficiently reduce PM10 concentrations, it is essential to detect the centralized generation, diffusion factor, expanding route, expanding measure, and other variables and to remove or reduce the diffusion factor and level. Through operating the ventilation system in the right time frame while the PM10 concentration level increases, the power consumption and peak power consumption can be reduced.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.121-121
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• 2010

ZnO is a promising material for the application of high efficiency light emitting diodes with short wavelength region for its large bandgap energy of 3.37 eV which is similar to GaN (3.39 eV) at room temperature. The large exciton binding energy of 60 meV in ZnO provide provides higher efficiency of emission for optoelectronic device applications. Several ZnO/ZnMgO multiple quantum well (MQW) structures have been grown on various substrates such as sapphire, GaN, Si, and so on. However, the achievement of high quality ZnO/ZnMgO MQW structures has been somehow limited by the use of lattice-mismatched substrates. Therefore, we propose the optical properties of ZnO/ZnMgO multiple quantum well (MQW) structures with different well widths grown on lattice-matched ZnO substrates by molecular beam epitaxy. Photoluminescence (PL) spectra show MQW emissions at 3.387 and 3.369 eV for the ZnO/ZnMgO MQW samples with well widths of 2 and 5 nm, respectively, due to the quantum confinement effect. Time-resolved PL results show an efficient photo-generated carrier transfer from the barrier to the MQWs, which leads to an increased intensity ratio of the well to barrier emissions for the ZnO/ZnMgO MQW sample with the wider width. From the power-dependent PL spectra, we observed no PL peak shift of MQW emission in both samples, indicating a negligible built-in electric field effect in the ZnO/$Zn_{0.9}Mg_{0.1}O$ MQWs grown on lattice-matched ZnO substrates.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.276-276
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• 2010

Localized surface plasmon resonance (LSPR) has been explored recently as a promising approach to increase energy conversion efficiency in photovoltaic devices, particularly for thin film hydrogenated amorphous silicon (a-Si:H) solar cells. The LSPR is frequently excited via an electromagnetic (EM) radiation in proximate metallic nanostructures and its primary con sequences are selective photon extinction and local EM enhancement which gives rise to improved photogeneration of electron-hole (e-h) pairs, and consequently increases photocurrent. In this work, high-dielectric-constant (k) $ZrO_2$ (refractive index n=2.22, dielectric constant $\varepsilon=4.93$ at the wavelength of 550 nm) is proposed as spacing layer to enhance the LSPR for application to the thin film silicon solar cells. Compared to excitation of the LSPR using $SiO_2$ (n=1.46, $\varepsilon=2.13$ at the wavelength of 546.1 nm) spacing layer with Au nanoparticles of the radius of 45nm, that using $ZrO_2$ dielectric shows the advantages of(i) ~2.5 times greater polarizability, (ii) ~3.5 times larger scattering cross-section and ~1.5 times larger absorption cross-section, (iii) 4.5% higher transmission coefficient of the same thickness and (iv) 7.8% greater transmitted electric filed intensity at the same depth. All those results are calculated by Mie theory and Fresnel equations, and simulated by finite-difference time-domain (FDTD) calculations with proper boundary conditions. Red-shifting of the LSPR wavelength using high-k $ZrO_2$ dielectric is also observed according to location of the peak and this is consistent with the other's report. Finally, our experimental results show that variation of short-circuit current density ($J_{sc}$) of the LSPR enhanced a-Si:H solar cell by using the $ZrO_2$ spacing layer is 45.4% higher than that using the $SiO_2$ spacing layer, supporting our calculation and theory.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.245-253
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• 2009

For the growth optimization of InAs/GaSb (8/8-ML) strained-layer superlattice (SLS), the structure has been grown under various conditions and modes and characterized by the high-resolution x-ray diffraction (XRD) analysis. In this study, the strain modulation is induced by changing parameters and modes, such as the growth temperature, the ratio of V/III beam-equivalent-pressure (BEP), and the growth interruption (GI), and the strain variation is analyzed by measuring the angle separation of 0th-order satellite peak in XRD patterns. The XRD results reveal that the growth temperature and the V/III(Sb/Ga) ratio are major parameters to change the crystallineity and the strain modulation in SLS structures, respectively. We have observed that the SLS samples with compressive strain prepared in this study are show a transition to tensile strain with decreasing V/III(Sb/Ga) ratio, and the GI process is a sensitive factor giving rise to strain modulation. These results obtained in this study suggest that optimized growth temperature and V/III(Sb/Ga) ratio are $350^{\circ}C$ and 20, respectively, and the appropriate GI time is approximately 3 seconds just before InAs growth that the crystallineity is maximized and the strain relaxation is minimized.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.