• 한국전기전자재료학회논문지
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• 제13권7호
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• pp.575-582
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• 2000

The Electrical conduction and optical properties of Ta$_{2}$/O$_{5}$ thin films as the insulators in DRAM capacitors were studied. Liquid Ta/sib 2//O sub 5/ were prepared by a sol-gel processing and multiple layers were applied by spin-coating up to thickness of 800$\AA$. At annealing temperature of 300~$600^{\circ}C$ the electrical conduction and specific dielectric constant were discussed the behaivor of carrier were observed by the Thermally Stimulated Current (TSC) at the temperature range of 30~23$0^{\circ}C$. At annealing temperature of 300~$600^{\circ}C$ the samples were found to be amorphous below $600^{\circ}C$ and crystalline over it. The electrical strength was about 2.2 MV/cm at 40$0^{\circ}C$. In spite of noncrystallization over 50$0^{\circ}C$ the increasing of leakage current due to pinholes and increasing creak. The refractive index was obtained maximum (2.2) at 40$0^{\circ}C$. The dielectric constant was obtained maximum(18.6) at 40$0^{\circ}C$. TSC was observed one peak at the temperature range of 30~23$0^{\circ}C$ from sample at 40$0^{\circ}C$. In the case of collecting voltage the peak size is decreased in proportion to collecting voltage and then the peak may be thought carrier to be a ionic space charge.e.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권1호
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• pp.24-29
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• 2000

We propose a simple method to control the crystallization depth of amorphous silicon (a-Si) deposited by PECVD or LPCVD during the excimer laser annealing (ELA). Employing the new method, we have formed poly-Si/a-Si double film and fabricated a new poly-Si TFT with vertical a-Si offsets between the poly-Si channel and the source/drain of TFT without any additional photo-lithography process. The maximum leakage current of the new poly-Si TFT decreased about 80% due to the highly resistive vertical a-Si offsets which reduce the peak electric field in drain depletion region and suppress electron-hole pair generation. In ON state, current flows spreading down through broad a-Si cross-section in the vertical a-Si offsets and the current density in the drain depletion region where large electric field is applied is reduced. The stability of poly-Si TFT has been improved noticeably by suppressing trap state generation in drain region which is caused by high current density and large electric field. For example, ON current of the new TFT decreased only 7% at a stress condition where ON current of conventional TFT decreased 89%.

• 한국초전도ㆍ저온공학회논문지
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• 제15권4호
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• pp.26-29
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• 2013

Smart fault current controller (SFCC) proposed in our previous work consists of a power converter, a high temperature superconducting (HTS) DC reactor, thyristors, and a control unit [1]. SFCC can limit and control the current by adjusting firing angles of thyristors when a fault occurs. SFCC has complex structure because the HTS DC reactor generates the loss under AC. To use the DC reactor under AC, rectifier that consists of four thyristors is needed and it increases internal resistance of SFCC. For this reason, authors propose a hybrid type superconducting fault current limiter (SFCL). The hybrid type SFCL proposed in this paper consists of a non-inductive superconducting coil and two thyristors. To verify the feasibility of the proposed hybrid type SFCL, simulations about the interaction of the superconducting coil and thyristors are conducted when fault current flows in the superconducting coil. Authors expect that the hybrid type SFCL can control the magnitude of the fault current by adjusting the firing angles of thyristors after the superconducting coil limits the fault current at first peak.

• 한국재료학회지
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• 제14권12호
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• pp.876-884
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• 2004

This study was to investigate whether the bioactivity of the anodized and hydrothermally treated Ti-6Al-7Nb alloy were affected by the time of hydrothermal treatment. Anodizing was performed at current density 30 $mA/cm^2$ up to 300 V in electrolyte solutions containing $DL-{\alpha}-glycerophosphate$ disodium salt hydrate $(DL-{\alpha}-GP)$ and calcium acetate (CA). Hydrothermal treatment was done at $300^{\circ}C$ for 30 min, 1 hr, 2 hrs, and 4 hrs to produce a thin film layer of hydroxyapatite (HA). The bioactivity was evaluated from HA formation on the surfaces in a Hanks' solution with pH 7.4 at $36.5^{\circ}C$ for 10, 20, and 30 days. Anodic oxide films were porous with pore size of $1\sim4{\mu}m\;and\;3\sim4{\mu}m$ thickness. The anodic oxide films composed with strong anatase peak with presence of rutile peak, and showed the increase in intensity of anatase peak after hydrothermal treatment. It was shown that the intensity of anatase peak increased with increasing the time of hydrothermal treatment but was no difference in rutile peak. The corrosion voltage was the highest in the group of hydrothermal treatment for 2 hrs (Ecorr: -338.6 mV). The bioactivity in Hank's solution was accelerated with increasing the time of hydrothermal treatment.

• Earthquakes and Structures
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• 제3권5호
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• pp.719-747
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• 2012

In this paper a novel approach is proposed to address the problem of deriving non-stationary stochastic processes which are compatible in the mean sense with a given (target) response (uniform hazard) spectrum (UHS) as commonly desired in the aseismic structural design regulated by contemporary codes of practice. The appealing feature of the approach is that it is non-iterative and "one-step". This is accomplished by solving a standard over-determined minimization problem in conjunction with appropriate median peak factors. These factors are determined by a plethora of reported new Monte Carlo studies which on their own possess considerable stochastic dynamics merit. In the proposed approach, generation and treatment of samples of the processes individually on a deterministic basis is not required as is the case with the various "two-step" approaches found in the literature addressing the herein considered task. The applicability and usefulness of the approach is demonstrated by furnishing extensive numerical data associated with the elastic design UHS of the current European (EC8) and the Chinese (GB 50011) aseismic code provisions. Purposely, simple and thus attractive from a practical viewpoint, uniformly modulated processes assuming either the Kanai-Tajimi (K-T) or the Clough-Penzien (C-P) spectral form are employed. The Monte Carlo studies yield damping and duration dependent median peak factor spectra, given in a polynomial form, associated with the first passage problem for UHS compatible K-T and C-P uniformly modulated stochastic processes. Hopefully, the herein derived stochastic processes and median peak factor spectra can be used to facilitate the aseismic design of structures regulated by contemporary code provisions in a Monte Carlo simulation-based or stochastic dynamics-based context of analysis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.98-101
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• 1990

In order to investigate the laser effects resulted from the behaviors of carriers for BOPP film, experiment of TSC were carried out on the specimen with 15[$\mu\textrm{m}$] thick irradiated by He-Ne laser. The TSC spectras were observed in the temperature range of -100[$^{\circ}C$] to 130[$^{\circ}C$] with the electric field of 20∼60[MV/m], had show four of the distinguished peak such as ${\alpha}$$_1$, ${\alpha}$$_2$, ${\beta}$ and ${\gamma}$, which appeared at 115, 80, 17 and -30[$^{\circ}C$] respectively. Specially, ${\alpha}$$_1$ was observed and anomalous TSC flowing in the same direction as the charging current on the high-electric field such as 50∼60[MV/m]. In according on the consequences obtained from the studies, the origin of ${\alpha}$$_1$peak was attributed to the detrapping process form trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallow trap with 0.4[eV], in he amorphous regions.

• Earthquakes and Structures
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• 제3권3_4호
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• pp.581-609
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• 2012

In this paper a novel non-iterative approach is proposed to address the problem of deriving non-stationary stochastic processes which are compatible in the mean sense with a given (target) response (uniform hazard) spectrum (UHS) as commonly desired in the aseismic structural design regulated by contemporary codes of practice. This is accomplished by solving a standard over-determined minimization problem in conjunction with appropriate median peak factors. These factors are determined by a plethora of reported new Monte Carlo studies which on their own possess considerable stochastic dynamics merit. In the proposed approach, generation and treatment of samples of the processes individually on a deterministic basis is not required as is the case with the various approaches found in the literature addressing the herein considered task. The applicability and usefulness of the approach is demonstrated by furnishing extensive numerical data associated with the elastic design UHS of the current European (EC8) and the Chinese (GB 50011) aseismic code provisions. Purposely, simple and thus attractive from a practical viewpoint, uniformly modulated processes assuming either the Kanai-Tajimi (K-T) or the Clough-Penzien (C-P) spectral form are employed. The Monte Carlo studies yield damping and duration dependent median peak factor spectra, given in a polynomial form, associated with the first passage problem for UHS compatible K-T and C-P uniformly modulated stochastic processes. Hopefully, the herein derived stochastic processes and median peak factor spectra can be used to facilitate the aseismic design of structures regulated by contemporary code provisions in a Monte Carlo simulation-based or stochastic dynamics-based context of analysis.

• Current Optics and Photonics
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• 제5권2호
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• pp.186-190
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• 2021

In this study, a compact, picosecond, mid-infrared 3.8 ㎛ MgO:PPLN optical parametric oscillator (OPO) laser output with high peak power is realized using a master oscillator power amplifier (MOPA) 1 ㎛ solid-state laser seeded by a picosecond fiber laser as the pump source. The pump source was a 50 MHz and 10 ps fiber seed source. After AOM pulse selection and two-stage solid-state amplification, a 1,064 nm laser output with a repetition frequency of 1-2 MHz, pulse width of 9.5 ps, and a maximum average power of 20 W was achieved. Furthermore, a compact short cavity with a unsynchronized pump is adopted through the design of an OPO cavity structure. When the injection pump power was 15 W and the repetition frequency was 1 MHz, the average output power of idler light was 1.19 W, and the corresponding peak power was 119 kW. The optical conversion efficiency was 7.93%. When the repetition frequency was increased to 2 MHz, the average output power of idler light was 1.63 W, the corresponding peak power was 81.5 kW, and the optical conversion efficiency was 10.87%. At the same time, the output wavelength was measured at 3,806 nm, and the beam quality was MX2 = 3.21 and MY2 = 3.34.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 A
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• pp.525-527
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• 1996

Hysteresis current control is one of the simplest techniques used to control currents for high speed drive systems, because of its simplicity of implementation, fast current control response, and inherent peak current limiting capability. However the conventional fixed-band hysteresis control has a variable switching frequency throughout the fundamental period, and consequently the load current harmonics spreaded on the wide frequency range. In this paper, a simple, novel alterative approach is proposed for a variable-hysteresis band current controller which uses feedback techniques to achieve constant switching frequency with good dynamic response. The method is easily implemented in hardware, the resultant controller is easily tuned to a particular load, and has good immunity to variation in PV parameter and dc supply voltage.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 A
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• pp.115-116
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• 2006

Since the discovery of the high-temperature superconductors, many researches have been performed for the practical applications of superconductivity technologies in various fields. As results, significant progress has been achieved. Especially, Superconducting Fault Current Limiter (SFCL) offers an attractive means to limit fault current in power systems. The SFCLS, in contrast to current limiting reactors or high impedance transformers, are capable of limiting short circuit currents without adding considerable voltage drop and energy loss to power systems during normal operation. Under fault conditions, a resistance is automatically inserted into the power grid to limit the peak short-circuit current by transition from the superconducting state to the normal state, the quench. The advantages, like fail safe operation and quick recovery, make SFCL very attractive, especially for rapidly growing power systems with higher short-circuit capacities. In order to verify the effectiveness of the SFCL, in this paper, the analysis of fault current and voltage stability assessment in a sample distribution system and a transmission system are performed by the PSCAD/EMTDC based simulation method. Through the simulation, the advantage of SFCL application is shown, and the effective parameters of the SFCL are also recommended for both distribution and transmission systems. A resistive type component of SFCL is adopted in the analysis. The simulation results demonstrate not only the effectiveness of the proposed simulation scheme but also SFCL parameter assessment technique.