• Title/Summary/Keyword: peak current

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Smart Far-Field Wireless Power Transfer via Time Reversal (시간 역전을 기반으로 한 지능적 원거리 무선전력전송)

  • Park, Hong Soo;Hong, Ha Young;Hong, Sun K.
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.4
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    • pp.285-289
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    • 2018
  • In this paper, we demonstrate electromagnetic wave focusing and rectification based on time reversal as a smart method for far-field wireless power transfer. Time reversal in a complex propagation environment allows for transmission of high peak power pulses by focusing the electromagnetic waves selectively regardless of the receiver position. We demonstrate wave focusing and radio frequency (RF) to direct current (DC) rectification via numerical simulation of a complex propagation environment. The results reveal that time reversal can ensure peak power up to 12 dB greater compared to a narrowband continuous wave signal, thereby enhancing the rectified DC voltage with better efficiency.

Optical receiver design (광수신기 설계)

  • Han, Chang-Yong;Kim, Kyu-Chull
    • Proceedings of the Korea Information Processing Society Conference
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    • 2005.05a
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    • pp.1641-1644
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    • 2005
  • 현재의 인터넷과 같은 전자 통신망과 멀티미디어 시스템의 발달은 고속의 대용량 데이터 전송을 필요로 한다. 초고속 통신 시스템에서의 고속 데이터 전송은 주로 광섬유를 사용하는 광통신으로 이루어지고 있다. FTTH(Fiber To The Home)와 같은 광통신 시스템은 멀티미디어 커뮤니케이션을 위해 필요한 큰 데이터 전송률을 제공할 수 있기 때문에 더욱 더 중요성이 높아지고 있으며 이러한 광통신 시스템에서는 통신환경의 영향을 적게 받고 외부 조절이나 부품이 필요하지 않는 수신기 IC 의 개발이 요구되고 있다. 일반적으로 광통신 수신기에는 고속 동작에 적합한 특성을 가진 GaAs-MESFET 가 사용되고 있으나, 본 논문에서는 0.35um CMOS 2-poly 4-metal 공정을 이용하여 5Gbps 광수신기를 설계하였다. 설계된 수신기는 Preamplifier, Main amplifier, ABC 회로로 구성되어 있다. Transimpedance amplifier 형태의 Preamplifier 는 광검출기에 의해 생성된 전류 신호를 전압 신호로 변환한다. ABC 회로는 Peak_Hold 회로와 Bottom_Hold 회로로 구성되어 있다. 기존의 Peak_Hold 회로에서는 다이오드와 hold capacitor 를 이용하여 peak 값을 검출하도록 되어 있는데, 다이오드를 이용하는 경우 작은 입력 신호전압의 Peak 값을 검출하는 데 한계가 있다. 이러한 단점을 보완하고자 전류 거울형태의 Peak_Hold 회로를 설계하였다. 전류거울(current mirror)형태의 출력 신호의 duty error 를 줄이고 비트 에러율(Bit Error Rate)을 개선하는데 효과적이었다. 설계된 광수신기는 30dB 의 입력 dynamic range 와 입력 capacitance 3pF 에서 80MHz 의 대역폭을 가진다. 전력 소비량은 3.3V 전원 전압이 인가된 경우 약 150mW 정도이다.

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The construction of 3-phase 90 MVA short-time withstand current testing facilities (3상 90 MVA 단시간전류시험 설비 구축)

  • Suh, Yoon-Taek;Kim, Yong-Sik;Yun, Hak-Dong;Kim, Maeng-Hyun
    • Proceedings of the KIEE Conference
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    • 2005.07a
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    • pp.700-702
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    • 2005
  • The most electrical apparatus should be able to withstand short-time current and peak current during a specified short time until circuit breakers have interrupted fault current. It defines the short-time withstand ability of electric a apparatus to be remain for a time interval under high fault current conditions. It is specified by both dynamic ability and thermal capability. KERI(Korea Electrotechlology Research Institute) recently constructed the new short-time current and low voltage short circuit testing facilities. This paper shows short- circuit calculation of transformer and describes high current measuring system, and evaluate the result of short-time withstand test used in $3{\phi}$ 90MVA short-time current testing facilities.

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Change of the Characteristics of ZnO Arrester Blocks by Lightning Impulse Current (산화아연형 피뢰기 소자의 뇌충격전류에 의한 특성 변화)

  • Han, Joo-Sup;Song, Jae-Yong;Kil, Gyung-Suk
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.907-909
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    • 1998
  • This paper describes the effect of impulse current on degradation of ZnO blocks. In this study, an impulse current generator which can produce 8/20 [${\mu}s$], 3 [kA] and 4/10 [${\mu}s$], 5 [kA] waveform is designed and fabricated to simulate the lightning impulse current. The residual voltage, reference voltage, and leakage current flowing to the ZnO blocks are observed. The experimental results show that the leakage current increases continuously with the number of applied impulse current, but no significant changes in residual voltage and in operating voltage are observed until the ZnO block is destroyed. Also, it is confirmed that the main factor on degradation of ZnO blocks is rather the total energy applied to ZnO blocks than the peak value of the impulse current.

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Analysis on Quench Velocity of SFCL dependent on Source Voltage (전원전압에 따른 초전도 사고전류제한기의 퀜치속도 분석)

  • Lim, Sung-Hun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.10
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    • pp.889-894
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    • 2007
  • We investigated the quench velocity of superconducting fault current limiter (SFCL) dependent on the source voltage. $YBa_2Cu_3O_7$ (YBCO) thin film was used as the current limiting element for SFCL. The analysis on the quench velocity of SFCL is essential to determine the capacity of circuit breaker (CB) or coordinate with CB. Generally, the quench velocity of SFCL is related with the short-circuit current. To change the short-circuit current, in this paper, the amplitude of the power source voltage is adjusted. Through the fault current limiting experiments, the quench velocity of SFCL was confirmed to increase fast as the source voltage increased. On the other hand, the peak limited current was shown to increase with steady rate of increase.

Analysis on Current Distribution in Bi-2223/Ag Tapes with Applied Alternating Over-critical Current

  • Yim, Seong-Woo;Kim, Hye-Rim;Hwang, Si-Dole
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.6
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    • pp.678-682
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    • 2004
  • Generally Bi-2223/Ag tapes have a broad S/N transition region and their sheath is a good electric conductor. In this study, the current distribution between superconductor and metal sheath in HTS tapes were investigated. AC with its peak value above 10 times $I_{c}$ was applied to HTS tapes for around 6 cycles and V-I characteristics were measured. Using the resistance of the sheath and V-I curves, the current distribution between superconductor and metal sheath was calculated. When 150 $A_{p}$ was applied, more than 2/3 of the current flows through superconductor. However, in the case of 304 $A_{p}$, most of the applied current came to flow through the metal sheath at the 6th cycle.e.e.e.

Controlling the Properties of Graphene using CVD Method: Pristine and N-doped Graphene (화학기상증착법을 이용한 그래핀의 물성 조절: 그래핀과 질소-도핑된 그래핀)

  • Park, Sang Jun;Lee, Imbok;Bae, Dong Jae;Nam, Jungtae;Park, Byung Jun;Han, Young Hee;Kim, Keun Soo
    • KEPCO Journal on Electric Power and Energy
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    • v.1 no.1
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    • pp.169-174
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    • 2015
  • In this research, pristine graphene was synthesized using methane ($CH_4$) gas, and N-doped graphene was synthesized using pyridine ($C_5H_5N$) liquid source by chemical vapor deposition (CVD) method. Basic optical properties of both pristine and N-doped graphene were investigated by Raman spectroscopy and XPS (X-ray photoemission spectroscopy), and electrical transport characteristics were estimated by current-voltage response of graphene channel as a function of gate voltages. Results for CVD grown pristine graphene from methane gas show that G-peak, 2D-peak and C1s-peak in Raman spectra and XPS. Charge neutral point (CNP; Dirac-point) appeared at about +4 V gate bias in electrical characterization. In the case of pyridine based CVD grown N-doped graphene, D-peak, G-peak, weak 2D-peak were observed in Raman spectra and C1s-peak and slight N1s-peak in XPS. CNP appeared at -96 V gate bias in electrical characterization. These result show successful control of the property of graphene artificially synthesized by CVD method.

The Characteristic Study on the Extraction of a Co Ion in the Metal Ion Implanter (금속이온 주입기에서의 Co 이온의 인출 특성 연구)

  • Lee, Hwa-Ryun;Hong, In-Seok;Trinh, Tu Anh;Cho, Yong-Sub
    • Journal of the Korean Vacuum Society
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    • v.18 no.3
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    • pp.236-243
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    • 2009
  • Proton Engineering Frontier Project (PEFP) has supplied the metal ions to users by using an installed metal ion implanter of 120 keV. At present a feasibility study is being performed for a cobalt ion implantation. For a cobalt ion extraction we studied to sustain the high temperature($648^{\circ}C$) for metal ions vaporization from a cobalt chloride powder by using an alumina crucible in the ion source. The temperature condition of the crucible was satisfied with the plasma generation at the arc current of 120V and EHC power of 250W. The extracted beam current of $Co^+$ ions was dependent on the arc current in the plasma. The maximum beam current was $100{\mu}A$ at 0.18A of the arc current. The 3 peak currents of the extracted ions such as $Co^+$, $CoCl^+$ and $Cl^+$ were obtained by adjusting a mass analyzing magnet and the $Co^+$ ion beam peak current fraction as around 70% in the sum of the peak currents. The fluence of the implanted cobalt ions at the $10{\mu}A$ of the beam current and 90 minutes of the implantation time into an aluminum sample as measured around $1.74{\times}10^{17}#/cm^2$ by a quantitative analysis method of RBS (Rutherford Backscattering Spectrometry).

A Novel Electrochemical Method for Sensitive Detection of Melamine in Infant Formula and Milk using Ascorbic Acid as Recognition Element

  • Li, Junhua;Kuang, Daizhi;Feng, Yonglan;Zhang, Fuxing;Xu, Zhifeng;Liu, Mengqin
    • Bulletin of the Korean Chemical Society
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    • v.33 no.8
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    • pp.2499-2507
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    • 2012
  • A novel and convenient electrochemical method has been developed for sensitive determination of melamine (MEL) using ascorbic acid (AA) as the recognition element. The working electrode employed in this method was modified with the nanocomposite of hydroxyapatite/carbon nanotubes to enhance the current signal of recognition element. The interaction between MEL and AA was investigated by fourier transform infrared spectroscopy and cyclic voltammetry, and the experimental results indicated that hydrogen bonding was formed between MEL and AA. Because of the existing hydrogen bonding and electrostatic interaction, the anodic peak current of AA was decreased obviously while the non-electroactive MEL added in. It illustrated that the MEL acted as an inhibitor to the oxidation of AA and the decreasing signals can be used to detect MEL. Under the optimal conditions, the decrease in anodic peak current of AA was proportional to the MEL concentrations ranging from 10 to 350 nM, with a detection limit of 1.5 nM. Finally this newly-proposed method was successfully employed to detect MEL in infant formula and milk, and good recovery was achieved.

High-Speed Low-Power Global On-Chip Interconnect Based on Delayed Symbol Transmission

  • Park, Kwang-Il;Koo, Ja-Hyuck;Shin, Won-Hwa;Jun, Young-Hyun;Kong, Bai-Sun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.12 no.2
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    • pp.168-174
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    • 2012
  • This paper describes a novel global on-chip interconnect scheme, in which a one UI-delayed symbol as well as the current symbol is sent for easing the sensing operation at receiver end. With this approach, the voltage swing on the channel for reliable sensing can be reduced, resulting in performance improvement in terms of power consumption, peak current, and delay spread due to PVT variations, as compared to the conventional repeater insertion schemes. Evaluation for on-chip interconnects having various lengths in a 130 nm CMOS process indicated that the proposed on-chip interconnect scheme achieved a power reduction of up to 71.3%. The peak current during data transmission and the delay spread due to PVT variations were also reduced by as much as 52.1% and 65.3%, respectively.