• 한국추진공학회지
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• 제10권4호
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• pp.77-84
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• 2006

마이크로/나노 위성체 개발과 함께 위성체의 자세 제어 및 궤도 수정을 위한 마이크로 추력기의 개발이 필요하게 되었다. 다양한 마이크로 추력기들 중 가장 각광 받고 있는 마이크로 고체 추진제 추력기를 소개하고, 추력기의 구성 요소들에 관한 연구 결과를 기술하였다. 추진제 점화를 위한 마이크로 백금 점화기를 제작하여 형상 변수에 관한 성능 평가를 수행하였다. HTPB/AP 고체 추진제의 특성 연구를 수행하여, 추진제의 연소 속도를 측정하였다. 마이크로 챔버는 감광성 유리를 이방성 식각하여 제작하였으며, 최종적으로 이들 요소들을 통합하여 마이크로 고체 추진제 추력기의 연소 실험을 수행하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.208-208
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• 2008

Micro patterning of conductor line/space on LTCC green sheet in the LTCC module is an important process for miniaturization in 3D integrated circuits. This work presented the effect of inorganic binders on the microstructure, adhesion, electrical resistivity, shrinkage and line/space resolution, which is a part of study in photoimageable conductor paste. The photoimageable conductor paste contains silver powder, polymer binder, monomer, photo-initiator, UV absorber, and solvent. The inorganic binders were furnished with varied weight percentage of anorthite, diopside and MLS-62 glass frits from 0% to 7%. The Line/space sizes thus obtained was under 25 micron.

• 제어로봇시스템학회논문지
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• 제14권4호
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• pp.327-331
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• 2008

An in-line wet etch/cleaning system was established for the research and development in wet etch process as a formation of electrode such as metal or transparent conductive oxide layer. A reverse moving system was equipped in the in-line wet etch/cleaning system for the alternating motion of glass substrate in a wet etch bath of the system. Therefore, it was possible for the glass substrate to be moved back and forth and it was possible to reduce the size of the system by using the reversing moving system. For the effect of the alternating motion of substrate on the etch rate in the in-line wet etch bath, indium tin oxide(ITO) patterns were obtained through wet etch process in the in-line system in which the substrate was moved back and forth. From the CD(critical dimension) skews resulted from the ADI CD and ACI CD of the ITO patterns, it was concluded that the alternating motion of glass substrate are possible to be applied to the mass production of wet etch process.

• International Journal of Precision Engineering and Manufacturing
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• 제9권1호
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• pp.25-29
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• 2008

We introduce a new fabrication process for antireflective structured surfaces. A 4-inch silicon wafer was dipped in a suspension of 300-nm-diameter silica particles dispersed in a toluene solution. When the wafer was drawn out of the suspension, a hexagonally packed monolayer structure of particles self-assembled on almost the complete wafer surface. Due to the simple process, this could be applied to micro- and nano-patterning. The self-assembled silica particles worked as a mask for the subsequent reactive ion etching. An array of nanometer-sized pits could be fabricated since the regions that correspond to the small gaps between particles were selectively etched off. As etching progressed, the pits became deeper and combined with neighboring pits due to side-etching to produce an array of cone-like structures. We investigated the effect of etching conditions on antireflection properties, and the optimum shape was a nano-cone with height and spacing of 500 nm and 300 nm, respectively. This nano-structured surface was prepared on a $30\;{\times}\;10-mm$ area. The reflectivity of the surface was reduced 97% for wavelengths in the range 400-700 nm.

• 한국자기학회지
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• 제13권3호
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• pp.103-108
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• 2003

미시자기모델과 Stoner-Wohlfarth 모델을 이용하여 미크론 크기로 패터닝(patterning) 된 퍼멀로이 박막의 자기소거장 효과를 분석하였다. 또한 20 $\mu\textrm{m}$$\times$(40 $\mu\textrm{m}$~200 $\mu\textrm{m}$) 크기의 퍼멀로이 박막 시료를 DC 마그네트론 스퍼터링과 광 리소그라피(photo littlography)로 제작하였고, 제작된 시료의 자기저항 특성과 전산시늉에 의한 결과를 비교하였다. 미시자기모델에 의한 결과가 Stoner-Wohlfarth모델에 의한 결과보다 측정 데이터에 더 잘 일치하였다. 전산시늉 결과 미크론 크기로 패터닝 된 자기박막 시료의 경우 Stoner-Wohlfarth 모델에서의 자기소거장 근사식이 수정되어야함을 제안하였다.

• 센서학회지
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• 제29권4호
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• pp.275-278
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• 2020

In this study, we evaluated the temperature-dependent characteristics of homojunction InGaAs vertical Fin-shaped Tunnel Field-Effect Transistors (Fin TFETs), which were fabricated using a novel nano-fin patterning technique in which the Au electroplating and the high-temperature InGaAs dry-etching processes were combined. The fabricated homojunction InGaAs vertical Fin TFETs, with a fin width and gate length of 60 nm and 100 nm, respectively, exhibited excellent device characteristics, such as a minimum subthreshold swing of 80 mV/decade for drain voltage (V_DS) = 0.3 V at 300 K. We also analyzed the temperature-dependent characteristics of the fabricated TFETs and confirmed that the on-state characteristics were insensitive to temperature variations. From 77 K to 300 K, the subthreshold swing at gate voltage (V_GS) = threshold voltage (V_T), and it was constant at 115 mV/decade, thereby indicating that the conduction mechanism through band-to-band tunneling influenced the on-state characteristics of the devices.

• 전자공학회논문지A
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• 제33A권11호
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• pp.97-104
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• 1996

Because of the novel characteristics such as chemical stability, hardness, electrical resistivity and thermal conductance, diamond-like carbon (DLC) film is a suitable materials for the passivation layers. For this purpose, DLC films are synthesized under various conditions and are characterized. Adhesive stregth is excellent and increased with the increase of the hydrogen gas flow rate. The resistivity of approximately 5.3X10$^{8}{\Omega}{\cdot}cm$ is measured by automatic spreading resistance probe analysis method. The thermal conductivity of DLC films is superior to that of PSG oxide and improved by increasing the hydrogen gas flow rate. The patterning techniques of the DLC films is developed using the lift-off and RIE methods to form 5${\mu}$m line. Finally, power transistor with the DLC film as passivation layer is fabricated and analyzed. The test result shows the improsved long-term stability and higher breakdown voltage.

• 한국레이저가공학회지
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• 제9권3호
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• pp.15-21
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• 2006

A Polypropylene (PP) film was ablated using a femtosecond laser with a center wavelength of 785 nm, a pulse width of 184 fs and a repetition rate of 1 kHz. Increments of both pulse energy and the shot number of pulses lead to co-occurrence of photochemical and thermal effect, demonstrated by the spatial expansion of rim on the surface of PP. The shapes of the laser-ablated PP films were imaged by a scanning electron microscope (SEM) and measured a 3D optical measurement system (NanoFocus). And, the oxygen transmission rate (ORT) of periodically laser-ablated PP film were characterized by oxygen permeability tester for modified atmosphere packaging (MAP) of fresh fruit and vegetable. Our results demonstrate that femtosecond pulsed laser is efficient tools for breathable packaging films in modifying the flow of air and gas into and out of a fresh produce container, where the micropatterns are specifically tailored in size, location and number which are easily controlled by laser pulse energy and pulse patterning system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.564-564
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• 2012

Graphene has been emerged as a fascinating material for future nanoelectronic applications due to its extraordinally electronic properties. However, their zero-bandgap semimetallic nature is a major problem for applications in high performance field-effect transistors (FETs). Graphene nanoribbons (GNRs) with narrow widths (${\geq}10nm$) exhibit semiconducting behavior, which can be used to overcome this problem. In previous reports, GNRs were produced by several approaches, such as electron beam lithography patterning, chemically derived GNRs, longitudinal unzipping of carbon nanotubes, and inorganic nanowire template. Using these methods, however, the width distribution of GNRs was a quiet broad and substantial defects were inevitably occurred. Here, we report a novel approach for fabricating width-tailored GNRs by focused ion beam-assisted chemical vapor deposition (FIB-CVD). Width-tailored phenanthrene ($C_{14}H_{10}$) templates for direct growth of GNRs were prepared on $SiO_2$/Si substrate by FIB-CVD. The GNRs on the templates were synthesized at $900-1,050^{\circ}C$ with introducing $CH_4$ $(20sccm)/H_2$ (10 sccm) mixture gas for 10-300 min. Structural characterizations of the GNRs were carried out using Raman spectroscopy, scanning electron microscopy, and atomic force microscopy.