• Title/Summary/Keyword: pattern sensitive faults

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A New Test Algorithm for Bit-Line Sensitive Faults in High-Density Memories (고집적 메모리에서 BLSFs(Bit-Line Sensitive Faults)를 위한 새로운 테스트 알고리즘)

  • Kang, Dong-Chual;Cho, Sang-Bock
    • Journal of IKEEE
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    • v.5 no.1 s.8
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    • pp.43-51
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    • 2001
  • As the density of memories increases, unwanted interference between cells and coupling noise between bit-lines are increased. And testing high-density memories for a high degree of fault coverage can require either a relatively large number of test vectors or a significant amount of additional test circuitry. So far, conventional test algorithms have focused on faults between neighborhood cells, not neighborhood bit-lines. In this paper, a new test algorithm for neighborhood bit-line sensitive faults (NBLSFs) based on the NPSFs(Neighborhood Pattern Sensitive Faults) is proposed. And the proposed algorithm does not require any additional circuit. Instead of the conventional five-cell or nine-cell physical neighborhood layouts to test memory cells, a three-cell layout which is minimum size for NBLSFs detection is used. Furthermore, to consider faults by maximum coupling noise by neighborhood bit-lines, we added refresh operation after write operation in the test procedure(i.e.,$write{\rightarrow}\;refresh{\rightarrow}\;read$). Also, we show that the proposed algorithm can detect stuck-at faults, transition faults, coupling faults, conventional pattern sensitive faults, and neighborhood bit-line sensitive faults.

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Improvement of Test Method for t-ws Falult Detect (t-ws 고장 검출을 위한 테스트 방법의 개선)

  • 김철운;김영민;김태성
    • Electrical & Electronic Materials
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    • v.10 no.4
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    • pp.349-354
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    • 1997
  • This paper aims at studying the improvement of test method for t-weight sensitive fault (t-wsf) detect. The development of RAM fabrication technology results in not only the increase at device density on chips but also the decrease in line widths in VLSI. But, the chip size that was large and complex is shortened and simplified while the cost of chips remains at the present level, in many cases, even lowering. First of all, The testing patterns for RAM fault detect, which is apt to be complicated , need to be simplified. This new testing method made use of Local Lower Bound (L.L.B) which has the memory with the beginning pattern of 0(l) and the finishing pattern of 0(1). The proposed testing patterns can detect all of RAM faults which contain stuck-at faults, coupling faults. The number of operation is 6N at 1-weight sensitive fault, 9,5N at 2-weight sensitive fault, 7N at 3-weight sensitive fault, and 3N at 4-weight sensitive fault. This test techniques can reduce the number of test pattern in memory cells, saving much more time in test, This testing patterns can detect all static weight sensitive faults and pattern sensitive faults in RAM.

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An Efficient Built-in Self-Test Algorithm for Neighborhood Pattern- and Bit-Line-Sensitive Faults in High-Density Memories

  • Kang, Dong-Chual;Park, Sung-Min;Cho, Sang-Bock
    • ETRI Journal
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    • v.26 no.6
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    • pp.520-534
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    • 2004
  • As the density of memories increases, unwanted interference between cells and the coupling noise between bit-lines become significant, requiring parallel testing. Testing high-density memories for a high degree of fault coverage requires either a relatively large number of test vectors or a significant amount of additional test circuitry. This paper proposes a new tiling method and an efficient built-in self-test (BIST) algorithm for neighborhood pattern-sensitive faults (NPSFs) and new neighborhood bit-line sensitive faults (NBLSFs). Instead of the conventional five-cell and nine-cell physical neighborhood layouts to test memory cells, a four-cell layout is utilized. This four-cell layout needs smaller test vectors, provides easier hardware implementation, and is more appropriate for both NPSFs and NBLSFs detection. A CMOS column decoder and the parallel comparator proposed by P. Mazumder are modified to implement the test procedure. Consequently, these reduce the number of transistors used for a BIST circuit. Also, we present algorithm properties such as the capability to detect stuck-at faults, transition faults, conventional pattern-sensitive faults, and neighborhood bit-line sensitive faults.

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A New Test Algorithm for High-Density Memories (고집적 메모리를 위한 새로운 테스트 알고리즘)

  • Kang, Dong-Chual;Cho, Sang-Bock
    • Proceedings of the IEEK Conference
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    • 2000.11b
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    • pp.59-62
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    • 2000
  • As the density of memories increases, unwanted interference between cells and coupling noise between bit-lines are increased and testing high density memories for a high degree of fault coverage can require either a relatively large number of test vectors or a significant amount of additional test circuitry. From now on, conventional test algorithms have focused on faults between neighborhood cells, not neighborhood bit-lines. In this paper, a new algorithm for NPSFs, and neighborhood bit-line sensitive faults (NBLSFs) based on the NPSFs are proposed. Instead of the conventional five-cell and nine-cell physical neighborhood layouts to test memory cells, a three-cell layout which is minimum size for NBLSFs detection is used. To consider faults by maximum coupling noise by neighborhood bit-lines, we added refresh operation after write operation in the test procedure(i.e., write \longrightarrow refresh \longrightarrow read). Also, we present properties of the algorithm, such as its capability to detect stuck-at faults, transition faults, conventional pattern sensitive faults, and neighborhood bit-line sensitive faults.

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Modified March Algorithm Considering NPSFs (NPSFs를 고려한 수정된 March 알고리즘)

  • Kim, Tae-Hyeong;Yun, Su-Mun;Park, Seong-Ju
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.4
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    • pp.71-79
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    • 2000
  • The original March algorithms cannot detect CMOS ADOFs(Address Decoder Open Faults) which requires separate deterministic test patterns. Modified March algorithm using DOF(Degree of Freedom) was suggested to detect these faults in addition to conventional stuck faults. This paper augments the modified march test to further capture NPSFs(Neighborhood Pattern Sensitive Faults). Complete CA(Cellular Automata) is used for address generation and Rl-LFSRs(Randomly Inversed LFSRs) for data generation. A new modified March algorithm can detect SAF, CF, TF, CMOS ADOFs, and part of NPSFs. Time complexity of this algorithm is still O(n).

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Built-in self test for testing neighborhood pattern sensitive faults in content addressable memories (Content addressable memory의 이웃패턴감응고장 테스트를 위한 내장된 자체 테스트 기법)

  • 강용석;이종철;강성호
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.35C no.8
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    • pp.1-9
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    • 1998
  • A new parallel test algorithm and a built-in self test (BIST) architecture are developed to test various types of functional faults efficiently in content addressable memories (CAMs). In test mode, the read oepratin is replaced by one parallel content addressable search operation and the writing operating is performed parallely with small peripheral circuit modificatins. The results whow that an efficient and practical testing with very low complexity and area overhead can be achieved.

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A built-in structure for pseudorandom testing of RAM

  • Rao, Gururaj-K.;Kashiwagi, Hiroshi
    • 제어로봇시스템학회:학술대회논문집
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    • 1989.10a
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    • pp.957-961
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    • 1989
  • This paper deals with test-pattern generation and diagnoses of pattern-sensitive faults in RAM by use of simple pseudorandom M-sequences with an emphasis to built-in structure of these schemes. The problems that may arise during their implementation are discussed and an approach to builtin testing of RAM by such a scheme is given not bothering too much about the silicon area required.

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A Study on the Minimal Test Pattern of the RAM (RAM의 최소 테스트 패턴에 관한 연구)

  • 김철운;정우성;김태성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.11a
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    • pp.23-25
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    • 1996
  • In this paper aims at studying the minimal test pattem of the RAM. This also propose a scheme of testing faults from the new fault model using the LLB. The length of test patterns are 6N(1-wsf), 9.5N(2-wsf), 7N(3-wsfl, 3N(4-wsf) operations in N-bit RAM. This test techniques can write into memory cell the number of write operations is reduced and then much testing time is saved. A test set which detects all positive-negative static t-ws faults for t=0, 1, 2, 3, 4 and detects all pattern sensitive fault in memory array. A new fault model, which encompasses the existing fault model Is proposed.

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Dynamic Testing for Word - Oriented Memories (워드지향 메모리에 대한 동적 테스팅)

  • Young Sung H.
    • Journal of the Korea Computer Industry Society
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    • v.6 no.2
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    • pp.295-304
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    • 2005
  • This paper presents the problem of exhaustive test generation for detection of coupling faults between cells in word-oriented memories. According to this fault model, contents of any w-bit memory word in a memory with n words, or ability tochange this contents, is influenced by the contents of any other s-1 words in the memory. A near optimal iterative method for construction of test patterns is proposed The systematic structure of the proposed test results in simple BIST implementations.

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An Effective Memory Test Algorithm for Detecting NPSFs (이웃 패턴 감응 고장을 위한 효과적인 메모리 테스트 알고리듬)

  • Suh, Il-Seok;Kang, Yong-Seok;Kang, Sung-Ho
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.11
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    • pp.44-52
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    • 2002
  • Since memory technology has been developed fast, test complexity and test time have been increased simultaneously. In practice, March algorithms are used widely for detecting various faults. However, March algorithms cannot detect NPSFs(Neighborhood Pattern Sensitive Faults) which must be considered for DRAMs. This paper proposes an effective algorithm for high fault coverage by modifying the conventional March algorithms.