• Journal of the Korean Society for Precision Engineering
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• v.22 no.1
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• pp.199-206
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• 2005

Mask manufacturing is a high COC and COO process in developing of semiconductor devices because of mask production tool with high resolution. Direct writing has been thought to be the one of the patterning method to cope with development or small-lot production of the device. This study consists two categories. One is the additional process of the direct and maskless patterning generation using SLA for easy and convenient application and the other is a removal process using wet-etching process. In this study, cured status of epoxy pattern is most important parameter because of the beer-lambert law according to the diffusion of UV light. In order to improve the contact force between patterns and substrate, prime process was performed and to remove the semi-cured resin which makes a bad effects to the pattern, spin cleaning process using TPM was also performed. At a removal process, contact force between photo-curable resin as an etching mask and Si wafer is important parameter.

• Journal of Digital Convergence
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• v.11 no.4
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• pp.259-266
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• 2013

Binary connected-components labeling, which is widely used in the field of the pattern recognition, has been researched for a long time as one of the basic image processing techniques. Two-scan algorithm has been mainly used in the researches of the connected-components labeling. Recently, for the first scan in the two-scan algorithm, block-based labeling approaches have been used and reported as the fastest methods. In this paper, a new efficient scan mask for connected-components labeling with a block-based labeling approach is proposed. Labeling with the new pixel-based scan mask is more efficient than any other existing method. The results of the experiments show that the proposed method is faster than the existing fastest method.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.493-494
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• 2006

SU-8 can be implemented as a mask for micro Abrasive Jet Machining (micro-AJM) process [1]. In this paper, we will evaluate the quality of micro grooving result on glass substrate by micro-AJM process which using SU-8 as a mask. It was evaluated on width and edge profile of the micro grooving. The result was having distortion compare with the master film used to pattern the SU-8 mask. The value of distortion with other properties which came along with it, such as depth and surface roughness, can be optimized in order to fabricate micro-channel for micro-fluidic application.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.10 no.5
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• pp.179-185
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• 2010

In this paper, we present a performance evaluation for face recognition algorithm using feature feedback according to the Feature mask. In the face recognition method using feature feedback, important region is extracted from original data set by using the reverse mapping from the extracted features to the original space. In this paper, we evaluate the performance of feature feedback according to shape of Feature Mask for Yale data. Comparing the result using Important part and unimportant part, we show the validity and applicability of the pattern recognition method based on feature feedback.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.8
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• pp.793-798
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• 2009

In this paper, the simulation and optimization of SRH (Surface Relief Hologram) masks for printing LCD gate patterns using TIR (Total Internal Reflection) holographic lithography was investigated. A simulation and optimization algorithm based on SDTA (Scalar Diffraction Theory Analysis) method was developed. The accuracy of the algorithm was compared to that of the RCWA (Rigorous Coupled Wave Analysis) method for estimating the Fresnel diffraction pattern of Cr amplitude masks for the given system geometry. In addition, the results from the optimization algorithm were validated experimentally. It was found that one to the most important conditions for the fabrication of SRH masks is to avoid nonlinear shape distortions of the resulting grating. These distortions can be avoided by designing SRH masks with recorded gratings having small aspect ratios of width versus depth. The optimum gap size between the Cr and SRH masks was found using the optimization algorithm. A printed LCD gate pattern with a minimum line width of $1.5{\mu}m$ exposed using the optimized SRH mask was experimentally demonstrated.

• Journal of the Optical Society of Korea
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• v.5 no.3
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• pp.99-109
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• 2001

This paper presents a phase-only modulation scheme for a three-dimensional (3-D) image matching system to improve optical efficiency of the system. The 3-D image matching system is based on the two mask heterodyne scanning. A hologram of the 3-D reference object is first created and then the phase of the hologram is extracted. The phase of the hologram is represented as one mask with the other mask being a plane wave. The superposition of each beam modulated by the two masks generated a scanning beam pattern. This beam pattern scans the 3-D target object to be recognized. The output of the scanning system gives out the correlation of the phase-only hologram of the reference object and the complex hologram of the target object. Since a hologram contains 3-D information of an object as a form of fringe pattern, the correlation of holograms matches whole 3-D aspect of the objects. Computer simulations are performed with additive gaussian noise and without noise for the complex hologram modulation scheme and the phase-only hologram modulation scheme. The computer simulation results show that the phase-only hologram modulation scheme improves the optical efficiency. Thus the system with the phase-only hologram modulation scheme is more robust than the system with the complex hologram modulation scheme.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.189-189
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• 2015

Plasmonics, sensor, field effect transistors, solar cells 등 다양한 적용분야를 가지는 실리콘 구조체는 제작공정에 의해 전기적 및 광학적 특성이 달라지기 때문에 적합한 나노구조 제작방법이 요구되고 있다. 나노구조체 제작방법으로는 Photo lithography, Extreme ultraviolet lithography (EUV), Nano imprinting lithography (NIL), Block copolymer (BCP) 방식의 방법들이 연구되고 있으며, 특히 BCP는 direct self-assembly 특성을 가지고 있으며 가격적인 면에서도 큰 장점을 가진다. 하지만 BCP를 mask로 사용하여 식각공정을 진행할 경우 BCP가 버티지 못하고 변형되어 mask로서의 역할을 하지 못한다. 이러한 문제를 해결하기 위하여 본 논문에서는 BCP와 질화막을 이용한 double mask 방법을 사용하였다. 기판 위에 BCP를 self-assembly 시키고 mask로 사용하여 hole 부분으로 노출된 기판을 Ion gun을 통해 질화 시킨 후에 BCP를 제거한다. 기판 위에 hole 모양의 질화막 표면은 BCP와 다르게 etching 공정 중 변형되지 않는다. 이러한 질화막 표면을 mask로 사용하여 pillar pattern의 실리콘 나노구조체를 제작하였다. 질화막 mask로 사용되는 template은 PS와 PMMA로 구성된 BCP를 사용하였다. 140kg/mol의 polystyrene과 65kg/mol의 PMMA를 톨루엔으로 용해시키고 실리콘 표면 위에 spin coating으로 도포하였다. Spin coat 후 230도에서 40시간 동안 열처리를 진행하여 40nm의 직경을 가진 PS-b-PMMA self-assembled hole morphology를 형성하였다. 질화막 형성 및 etching을 위한 장비로 low-energy Ion beam system을 사용하였다. Reactive Ion beam은 ICP와 3-grid system으로 구성된 Ion gun으로부터 형성된다. Ion gun에 13.56 MHz의 frequency를 갖는 200W 전력을 인가하였다. Plasma로부터 나오는 Ion은 $2{\Phi}$의 직경의 hole을 가지는 3-grid hole로 추출된다. 10~70 voltage 범위의 전위를 plasma source 바로 아래의 1st gird에 인가하고, 플럭스 조절을 위해 -150V의 전위를 2nd grid에 인가한다. 그리고 3rd grid는 접지를 시켰다. chamber내의 질화 및 식각가스 공급은 2mTorr로 유지시켰다. 그리고 기판의 온도는 냉각칠러를 이용하여 -20도로 냉각을 진행하였다. 이와 같은 공정 결과로 100 nm 이상의 높이를 갖는 40 nm직경의 균일한 Silicon pillar pattern을 형성 할 수 있었다.

• Journal of the Korea Society of Computer and Information
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• v.12 no.5
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• pp.39-47
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• 2007

In this thesis, a method of generating an adaptable Region-Of-Interest(ROI) Mask for the Region-Of-Interest coding is suggested. In the method, an ROI Mask is generated using the information of the ROI designated by a user. In the existed method of ROI coding, after scanning all the pixels in order and discriminating an ROI, an ROI Mask is generated. But, in our method, after scanning a part of pixels based on the shape pattern of an ROI and discriminating a ROI by one code block unit, an ROI Mask is generated. Moreover, from the method, a pattern number, threshold of a ROI and background threshold parameter are provided. According to the result of its comparing test with the existed methods to show the usability, it is proved that our method is superior in speed to the existed ones.

• Journal of the Semiconductor & Display Technology
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• v.15 no.2
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• pp.32-37
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• 2016

Sidewall angle (SWA) of an absorber stack in extreme ultraviolet lithography mask is considered to be $90^{\circ}$ ideally, however, it is difficult to obtain $90^{\circ}$ SWA because absorber profile is changed by complicated etching process. As the imaging performance of the mask can be varied with this SWA of the absorber stack, more complicated optical proximity correction is required to compensate for the variation of imaging performance. In this study, phase shift mask (PSM) is suggested to reduce the variation of imaging performance due to SWA change by modifying mask material and structure. Variations of imaging performance and lithography process margin depending on SWA were evaluated through aerial image and developed resist simulations to confirm the advantages of PSM over the binary intensity mask (BIM). The results show that the variations of normalized image log slope and critical dimension bias depending on SWA are reduced with PSM compared to BIM. Process margin for exposure dose and focus was also improved with PSM.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.913-916
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• 1998

In this paper, to provide the robustness of character recognition, we propose a recognition method using the dilated boundary curve feature which has the invariance characteristics for the shift, scale, and rotation changes of character pattern. And its some characteristics and effectieness are evaluated through the experiments for both the english alphabets and the numeral digits. The feature vector is represented by the fourier descriptor for a boundary curve of the dilated character pattern which is generated by the circular mask dilation method, and is used for a nearest neighbort classifier(NNC) or a nearest neighbor mean classifier(NNMC). These the processing time and the recognition rate, and take also the robustness of recognition for both some internal noise and partial corruption of an image pattern.