• Journal of Advanced Marine Engineering and Technology
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• v.22 no.5
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• pp.702-711
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• 1998

The characteristics of corrosion resistance for the surface of medium high carbon steels and low alloy steels utilizing as manufacturing the machinery structures and machining tools and treating by plasma/ion nitriding process have been studied in terms of electrochemical polarization behav-iors including corrosion potential(Ecorr) anodic polarization trends and polarization resistance(Rp) The seven base materials showed a clear passivation behavior for the polarization tests in the ASTM standard solution 1N ${H_2){SO_4}$ Although the treated surface by plasma nitriding for the seven test materials showed a significant increase in hardness the treatment gave a detri-mental effect in corrosion resistance. The various characteristics including corrosion potential polarization curves microstructures corrosion current polarization resistance among non-treat-ed nitriding and/or soft-nitriding treated specimens have been investigated and some of the mechanisms discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.287.2-287.2
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• 2014

PV (photovoltaic) has becoming an important industry to invest due to its high robustness and require very little maintenance which goes a long time. Solar cell fabrication involves a few critical processes such as doping to make the N-type and P-type silicon, contact metallization, surface texturization, and anti-reflection coatings. Anti-reflection coating is a kind of surface passivation which ensures the stability, and efficiency of the solar cell. Thus, I will focus on the changes happen to the solar cell due to the reflectance and anti-reflection coating by PC1D. By using the PC1D (solar cell simulation program), I would analysis the effect of reflectance on the N-type cell. At last I will conclude the result regarding what I learned throughout this experiment.

• Journal of the Korean Chemical Society
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• v.51 no.6
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• pp.479-486
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• 2007

Bicarbonate 완충용액에서 Co-RDE를 이용하여 RDE 회전속도와 완충용액 속의 염화이온이 Co의 부식과 부동화에 미치는 영향을 연구하였다. Co-RDE의 회전속도가 부식에 미치는 영향은 Levich 식과 일치하였으며 부동화 막을 파괴하는데 염화이온의 효과가 큼을 알 수 있었다. 혼합 전위 이론을 사용하여 대류확산 조건에서 회전속도의 증가에 따라 부식전위가 양의 방향으로 증가하는 모형을 발견하였다. Tafel 영역에서 Co의 용해반응과 수소가 발생하는 환원반응은 전하이동과 물질이동을 이용하여 설명할 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.522-526
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• 1998

We have fabricated a LDD structured polysilicon thin film transistor with low leakge current and the optimized LDD length has been obtained. The device performance is improved is improved by hydrogen passivation process. The on.off current ratio of poly0Si TFT s with $0.5{\mu}m$ and $1.0{\mu}m$ LDD length is much higher than that of conventional structured device due to the decrease of leakege current. The optimized LDD length may be $0.5{\mu}$ from the experimental data such as on/off current ratio, threshold voltage and hydrogenation effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.583-586
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• 2000

The non-selective method by polishing after grinding was used widely to thinning of SDB SOI structures. This method was very difficult to thickness control of thin film, and it was dependent on equipments. However electrochemical etch-stop, one of the selective methods, was able to accurately thickness control and etch equipment was very simple. Therefore, this paper described with the effect of leakage current and electrodes on electrochemical etch-stop. Consequentially, PP(passivation potential) was changed according to the kinds of contact and contact sizes, but OCP(open current potential) was not change with range of -1.5~-1.3V

• Journal of Powder Materials
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• v.19 no.1
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• pp.40-48
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• 2012

The current situation of the nanopowders production technology based on the process of electrical explosion of wires is described. The advantages and disadvantages of the electroexplosive technology are indicated. The results of studies characterizing the effect of the electrical explosion conditions on the nanopowders properties are presented, including latest results: conditions of nanopowders passivation, conditions of nanopowders production having narrow size distribution, the methods of nanopowders diagnostic and standartization. In addition, the application and area of future research on this technology are proposed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.306-306
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• 2013

p-type Si(100)기판위에 Al2O3 박막을 증착하고 Si/SiO2 박막을 연속 증착하여 태양전지를 제작하였다. Si/SiO2 박막을 연속으로 증착하면 양자 구속이 일어나고 이로 인한 유효밴드 갭이 증가하게 되고, tunnel effect와 계면에서의 passivation 효과를 기대할 수 있다. 이런 효과들을 이용하여 고효율 태양전지를 기대 할 수 있다. 본 연구에서는 Remote Plasma Atomic Layer Deposition(RPALD)를 이용하여 Al2O3를 증착하였고 RF-Magnetron Sputter와 e-beam Evaporator 장비를 이용하여 Si/SiO2을 증착하였다. 전극으로는 Ti/Ag와 Al을 이용하였다. Solar simulator 장비를 이용하여 cell의 전기적 특성 평가를 평가하였고(Fig. 1) QE 측정장비를 통해 파장대의 따른 광학적 측정을 하였다(Fig. 2). ellipsometer 장비와 ${\alpha}$-step 장비로 박막과 전극의 두께를 측정하였고 4-point prove 장비를 이용하여 면저항, 저항율을 측정 평가하였다. 또한 I-V, C-V 측정 결과 터널링 현상이 일어나는 것을 확인 하였으며, Si/SiO2 다중 박막을 연속 증착 할수록 cell 효율이 더 좋게 나온다는 것을 확인하였다.

• Journal of the Korean institute of surface engineering
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• v.54 no.2
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• pp.71-76
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• 2021

Ag925, silver with added copper, is popular alloy due to its low price. However, it has a difficult to use because of the low corrosion resistance. In various alloys, neodymium (Nd) works as an element to improve corrosion resistance by reacting with interstitial elements in the alloy. When 1.5 wt. % Neodymium was added to Ag925, the potential on the activated polarization in a potentiodynamic polarization test was increased from -0.15 V to -0.05 V. Ag925 with added neodymium showed the passivation after activation polarization. But When the potential increased around 50 mV, the current density is increased to 3 × 10-3. Ag925 with the 1.5 wt. % Nd had the low corrosion rate.

• Transactions on Electrical and Electronic Materials
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• v.1 no.2
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• pp.7-11
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• 2000

a-Si:H and poly-Si TFT(thin film transistor) characteristics were investigated using an inverted staggered type TFT. The TFT an as-grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. The poly-Si films were achieved by using an isothermal and RTA treatment for glow discharge deposited a-Si:H films. The a-Si:H films were cystallized at the various temperature from 600$^{\circ}C$ to 1000$^{\circ}C$. As anneal temperature was elevated, the TFT exhibited increased g$\sub$m/ and reduced V$\sub$ds/. V$\sub$T/. The poly-Si grain boundary passivation with grain boundary trap types and activation energies as a function of anneal temperature. The poly-si TFT showed an improved I$\sub$nm//I$\sub$off/ ratio of 10$\^$6/, reduced gate threshold voltage, and increased field effect mobility by three orders.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.20-23
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing(CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical polishing(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commercial slurries pads, and post-CMP cleaning alternatives are discuss, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper deposition is a mature process from a historical point of view, but a very young process from a CMP perspective. While copper electro deposition has been used and studied for decades, its application to Cu damascene wafer processing is only now gaining complete acceptance in the semiconductor industry. The polishing mechanism of Cu-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper passivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.