• Journal of Electrical Engineering and Technology
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• v.9 no.6
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• pp.2079-2088
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• 2014

In this paper, we propose new physically based threshold voltage models for short channel Surrounding Gate Silicon Nanowire Transistor with two different geometries. The model explores the impact of various device parameters like silicon film thickness, film height, film width, gate oxide thickness, and drain bias on the threshold voltage behavior of a cylindrical surrounding gate and rectangular surrounding gate nanowire MOSFET. Threshold voltage roll-off and DIBL characteristics of these devices are also studied. Proposed models are clearly validated by comparing the simulations with the TCAD simulation for a wide range of device geometries.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 1998.10a
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• pp.201-209
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• 1998

The propagation of water waves over irregular bottom bathymetry and around islands involves many process. In this study of numerical model is developed current in water of varying depth. The method used is splitting method and minimax approximation. This numerical method used is Crank-Nicolson scheme. This model is applied to Vincent shoal and compared with laboratory data. The results agreed well with laboratory data. The results agreed well with laboratory data. Current effect is considered in this study. So, the model is used for the estimation of rip current in the slowly varying topography.

• Journal of Electrical Engineering and Technology
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• v.9 no.1
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• pp.247-253
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• 2014

In this paper, a new two dimensional (2D) analytical modeling and simulation for a Dual Material Double Gate tunnel field effect transistor (DMDG TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunnelling generation rate and thus we numerically extract the tunnelling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.

• Proceedings of the KIEE Conference
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• 2001.07a
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• pp.184-186
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• 2001

지금까지 전력계통에 대한 안정도 해석이 활발하게 논의되고 있다. 과도 안정도 해석의 시모의법에서 보편적으로 사용되고 있는 알고리즘들에서 기존에 사용되어졌던 SI법 중 Trapezoidal법이 알려져 있으나 그 데이터 오차가 많아 신뢰할 수 없기 때문에 거의 사용되지 않고 있는 현실이다. 본 논문에서는 이러한 시영역 모의 방법 중 SI법의 Trapezoidal법이 오차가 많은 단점을 없애기 위해서 전력계통 상태변수의 업데이트를 위한 새로운 알고리즘을 제안하였다. 제안된 알고리즘을 명확한 수학적 이론으로 증명하였으며, 제안된 방법을 전력계통에 적용하여 과도 안정도 해석을 한다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.221-226
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• 2008

A new two dimensional (2-D) analytical model for the Threshold Voltage on dual material surrounding gate (DMSG) MOSFETs is presented in this paper. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expression for the threshold voltage and sub-threshold swing is derived. It is seen that short channel effects (SCEs) in this structure is suppressed because of the perceivable step in the surface potential which screens the drain potential. We demonstrate that the proposed model exhibits significantly reduced SCEs, thus make it a more reliable device configuration for high speed wireless communication than the conventional single material surrounding gate (SMSG) MOSFETs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.451-456
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• 2014

A compact model of a depletion-mode silicon-nanowire (Si-NW) pH sensor is proposed. This drain current model is obtained from the Pao-Sah integral and the continuous charge-based model, which is derived by applying the parabolic potential approximation to the Poisson's equation in the cylindrical coordinate system. The threshold-voltage shift in the drain-current model is obtained by solving the nonlinear Poisson-Boltzmann equation for the electrolyte. The simulation results obtained from the proposed drain-current model for the Si-NW field-effect transistor (SiNWFET) agree well with those of the three-dimensional (3D) device simulation, and those from the Si-NW pH sensor model also agree with the experimental data.

• Bulletin of the Society of Naval Architects of Korea
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• v.19 no.4
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• pp.19-29
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• 1982

Galerkin's finite element method is applied to a two-dimensional heat convection-diffusion problem arising in the hydrodynamic lubrication of thrust bearings used in naval vessels. A parabolized thermal energy equation for the lubricant, and thermal diffusion equations for both bearing pad and the collar are treated together, with proper juncture conditions on the interface boundaries. it has been known that a numerical instability arises when the classical Galerkin's method, which is equivalent to a centered difference approximation, is applied to a parabolic-type partial differential equation. Probably the simplest remedy for this instability is to use a one-sided finite difference formula for the first derivative term in the finite difference method. However, in the present coupled heat convection-diffusion problem in which the governing equation is parabolized in a subdomain(Lubricant), uniformly stable numerical solutions for a wide range of the Peclet number are obtained in the numerical test based on Galerkin's classical finite element method. In the present numerical convergence errors in several error norms are presented in the first model problem. Additional numerical results for a more realistic bearing lubrication problem are presented for a second numerical model.

• Water Engineering Research
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• v.3 no.3
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• pp.203-213
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• 2002

A wide-angle parabolic approximation equation model considering the interaction between wave and current is employed to simulate the deformation of irregular waves over a submerged shoal. It is found that the model gives qualitative agreements with experimental data for the cases of breaking waves around the shoal. Thus, the effect of breaking-induced current on the refraction-diffraction of waves is well understood.

• Journal of Electrical Engineering and Technology
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• v.9 no.4
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• pp.1355-1359
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• 2014

In the proposed work a 2D analytical modeling of single halo Triple material Surrounding Gate (SH-TMSG) MOSFET is developed. The Surface potential and Electric Field has been derived using parabolic approximation method and the simulation results are analyzed. The essential substantive is provided which elicits the deterioration of short channel effects and the results of the analytical model are delineated and compared with MEDICI simulation results and it is well corroborated.

• Journal of Korean Port Research
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• v.12 no.2
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• pp.281-290
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• 1998

The propagation of water waves over irregular bottom bathymetry and around islands involves many process-shoaling, refraction, energy dissipation and diffraction. Numerical model in this study is developed with the mild slope equation to investigate wave transformation in water of varying depth and combined waves and a current. The method used is splitting method and minimax approximation. The numerical method used in this study is Crank-Nicolson scheme in the FDM. This model is applied to Vincent shoal and compared with laboratory experimental data. The results agreed well with laboratory data. Current effect is considered in this study. This model can be used for the estimation of rip current in the slowly varying topography.