• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2001년도 춘계학술대회논문집D
• /
• pp.260-265
• /
• 2001

This paper describes total flow control of an ice slurry system for pump energy saving. Similar turbo machinery has a characteristic that input power ratio is proportional to the three time of revolution speed ratio. To reduce the energy cost of brine pump in ice slurry storage systems, inverter is adapted instead of 3-way valve to control the speed of brine pump motor. One type of cooling load profile was used as driving load of the system, generated by a boiler and warm water storage tank. As results of the laboratory test, energy consumption and cost of the pump were reduced by 11.4%.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2003년도 춘계학술대회 논문집
• /
• pp.78-81
• /
• 2003

Polishing Processes are widely used in the glass, optical, die and semiconductor industry and are conventionally carried out using abrasive slurry and a polishing pad. But abrasive slurry process has a weak point that is high cost of handling of used slurry and hard controllability of slurry. Recently, some researches have attempted to solve these problems and one method is the development of a fixed abrasive pad. FAP has a couple of advantages including clean environment, lower CoC, easy controllability and higher form accuracy. But FAP also has a weak point that is need of dressing because of glazing and loading. The paper introduces the basic concept and fabrication technique of FAP using hydrophilic polymers with swelling characteristics in water and explains the self-conditioning phenomenon. Experimental results demonstrate to achieve nano surface roughness of soda lime glass for optical application

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
• /
• pp.89-92
• /
• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제53권11호
• /
• pp.551-555
• /
• 2004

In this paper, in order to reduce the high COO (cost of ownership) and COC (cost of consumables), we have collected the silica abrasive powders by filtering method after subsequent CMP (chemical mechanical polishing) process for the purpose of abrasives recycling. And then, we have studied the possibility of recycle of reused silica abrasive through the analysis of particle size distribution and FE-SEM (field emission-scanning electron microscope) measurements of abrasive powders. It was annealed the collected abrasive powders to promote the mechanical strength of reduced abrasion force. Finally, we compared the CMP characteristics between self-developed KOH-based silica abrasive slurry and original slurry. As our experimental results, we obtained the comparable rate of removal and good planarity with commercial products. Consequently we can expect the saving of high cost slurry.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.81-82
• /
• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, so as to investigate the influence of mixed abrasive slurry (MAS), such as $ZrO_2$, $CeO_2$, and $MnO_2$ for Ti-CMP application.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
• /
• pp.313-316
• /
• 2004

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics(ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
• /
• pp.188-191
• /
• 2003

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• 한국건축시공학회:학술대회논문집
• /
• 한국건축시공학회 2023년도 봄 학술논문 발표대회
• /
• pp.401-402
• /
• 2023

The shear connection of the vertical construction joint of a slurry wall by the concrete shear key has excellent structural performance and is economical and eco-friendly. However, technology for forming concrete shear keys in the underground is still underdeveloped. This paper proposes the development of the construction technology required to form a concrete shear key at the vertical construction joint of the slurry wall.

• 한국해양공학회:학술대회논문집
• /
• 한국해양공학회 2001년도 추계학술대회 논문집
• /
• pp.213-219
• /
• 2001

In this paper, particle velocity of slurry flow, a kind of solid-particle two phase flow, was measured by using a particle tracking velocimetry. Particles are modeled by sphere-shaped glass whose diameters are 3mm, 5mm, and 7mm At first, a particle which is falling in the water is captured and analyzed to give their free falling velocity. The falling velocity was very high up to about 4m/sec in the air, which needs special algorithm for the accurate measurement. For the upwelling slurry flow in the straight duct, there are some noises caused by cavity. However, the effect was so small that it does not affect the measurement of large particles. From the preliminary study of applying the PTV to measurement of particle movement in slurry flow, we could find out the optimum value of parameters: threshold value., searching area radius and correlation area size.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.366-367
• /
• 2006

In general, HF chemistry lifts off the particles during scrubbing after polishing and effectively removes particles. It is sometimes impossible to apply HF chemistry on W plug due to the degradation of electrical characteristics of a device. In this paper, a post W CMP cleaning process is proposed to remove residue particles without applying HF chemistry. After W CMP, recessed plugs are created, therefore they easily trap slurry particles during CMP process. These particles in recessed plug are not easy to remove by brush scrubbing when $NH_4OH$ chemistry is used for the cleaning because the brush surface can not reach the recessed area of plugs. Buffing with oxide slurry was followed by W CMP due to its high selectivity to W. The buffing polishes only oxide slightly which creates higher plug profiles than surrounding oxide. Higher profiles make the brush contact much more effectively and result in a similar particle removal efficiency even in $NH_4OH$ cleaning to that in HF brush scrubbing.