• 전기전자학회논문지
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• 제23권4호
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• pp.1175-1181
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• 2019

논문에서는 1:10으로 희석된 실리카 슬러리에 산화망간(MnO₂) 연마제를 첨가하여 재처리된 혼합연마제 슬러리(Mixed Abrasive Slurry; MAS)의 화학기계적연마(CMP) 특성을 연구하였다. 최적의 연마 성능을 갖는 슬러리를 설계하기 위해서는 높은 연마율, 하부층에 대한 적절한 연마선택비, 연마 후의 낮은 표면결함, 슬러리의 안정성 등을 얻어야 한다. 산화망간이 첨가된 MAS의 연마 성능은 연마율 및 비균일도와 같은 CMP 성능, 입도 분석, 표면 형상에 대해 평가하였다. 실험결과, 높은 연마율과 낮은 비균일도 측면에서 볼 때 원액 실리카 슬러리와 대등한 슬러리 특성을 얻을 수 있었다. 따라서 본 연구에서 제안하는 MnO₂-MAS를 사용하면 고가의 소모재인 슬러리를 절약하는데 매우 유용할 것이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.109-112
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• 2003

Recently, CMP (Chemical mechanical polishing) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, COO (cost of ownership) and COC (cost of consumables) were relatively increased because of expensive slurry. In this paper, we have studied the possibility of recycle of reused silica slurry in order to reduce the costs of CMP slurry. Also, we have collected the silica abrasive powders by filtering after subsequent CMP process for the purpose of abrasive particle recycling. And then, we annealed the collected abrasive powders to promote the mechanical strength of reduced abrasion force. Finally, we compared the CMP characteristics between self-developed KOH-based silica abrasive slurry and original slurry. As our experimental results, we obtained the comparable removal rate and good planarity with commercial products. Consequently, we can expect the saving of high cost slurry.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.979-986
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• 2001

This paper was researched the effect of slurry stability on the mechanical and electrical property of the porcelain insulator with various raw materials such as feldspar, quartz, clay and l7wt% alumina. The slurry was fabricated after ball milling the mixed raw materials. Green compacts were made by the extrusion and were sintered at 1300$\^{C}$ for 60min in the tunnel kiln. All of the specimens were densified 96% of the theoretical density. The 3-point flexural strength($\sigma$$\_$B/) of the specimen stabilized slurry pH 7.8 was 1650 k9/㎠ and the vickers hardness(Hv) and the fracture toughness(K$\_$IC/) were 27.5 GPa and 2.2 MPa$.$m$\^$$\sfrac{1}{2}$/, respectively. The mechanical properties of the specimen stabilized slurry PH 9.3 were 1716 kg/㎠($\sigma$$\_$B/), 27.6 GPa(Hv) and 3.0 MPa$.$m$\^$$\sfrac{1}{2}$/(K$\_$IC/), respectively. The dielectric strength was increased from 8.3kV/mm to 13.2kV/mm as the increase of the slurry pH from 7.8 to 9.3. Therefore the physical properties of the specimen stabilized slurry pH 9.3 were improved.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.487-487
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• 2009

One of the critical consumables in chemical mechanical polishing (CMP) is a specialized solution or slurry, which typically contains both abrasives and chemicals acting together to planarize films. In single abrasive slurry (SAS), the solid phase consists of only one type of abrasive particle. On the other hand, mixed abrasive slurry (MAS) consists of a mixture of at least two types of abrasive particles. In this paper, we have studied the CMP characteristics of mixed abrasive slurry (MAS) retreated by adding of $CeO_2$ abrasives within 1:10 diluted silica slurry (DSS). The slurry designed for optimal performance should produce reasonable removal rates, acceptable polishing selectivity with respect to the underlying layer, low surface defects after polishing, and good slurry stability. The modified abrasives in MAS are evaluated with respect to their particle size distribution, surface morphology, and CMP performances such as removal rate and non-uniformity. As an experimental result, we obtained the comparable slurry characteristics compared with original silica slurry in the viewpoint of high removal rate and low non-uniformity.

• 한국지반공학회논문집
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• 제18권4호
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• pp.239-248
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• 2002

안정액(bentonite slurry)을 이용한 지하연속벽의 건설은 굴착된 trench 내에서 안정액이 침투케익과 표면케익을 포함한 불투수막을 형성함으로서 trench 의 안정성을 유지할 수가 있다. 그러므로 구조용 지하연속벽 건설이나 폐기물 매립장의 차수용 연속벽 건설시 지반조건 및 주변여건의 변화에 의하여 여러 가지 문제가 발생 될 수 있다. 본 논문은 안정액 유출과 불투수케익 형성과정을 대형실험으로 모델링하여 그 결과가 slurry trench 안정성에 미치는 영향을 평가하고, 현장조건에 적합한 설계절차를 제시하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.434-437
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• 2005

Chemical Mechanical Polishing (CMP) has become an essential step in the overall semiconductor wafer fabrication technology. In general, CMP is a surface planarization method in which a silicon wafer is rotated against a polishing pad in the presence of slurry under pressure. The polishing pad, generally a polyurethane-based material, consists of polymeric foam cell walls, which aid in removal of the reaction products at the wafer interface. It has been found that the material removal rate of any polishing pad decreases due to the so-called 'pad glazing' after several wafer lots have been processed. Therefore, the pad restoration and conditioning has become essential in CMP processes to keep the urethane polishing pad at the proper friction coefficient and to allow effective slurry transport to the wafer surface. Diamond pad conditioner employs a single layer of brazed bonded diamond crystals. Due to the corrosive nature of the polishing slurry required in low pH metal CMP such as copper, it is essential to minimize the possibility of chemical interaction between very low pH slurry (pH <2) and the bond alloy. In this paper, we report an exceptional protective coated conditioner for in-situ pad conditioning in low pH Cu CMP process. The protective Cr-coated conditioner has been tested in slurry with pH levels as low as 1.5 without bond degradation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.34-37
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• 2001

As the integrated circuit device shrinks to smaller dimensions, chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the inter-metal dielectrics (IMD) layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. To prevent agglomerated slurry particle from inflow, we installed 0.5${\mu}m$ POU (point of use) filter, which is depth-type filter and has 80% filtering efficiency for the $1.0{\mu}m$ size particle. In this paper, we studied the relationship between defect generation and pad count to understand the exact efficiency of the slurry filtration, and to find out the appropriate pad usage. Our preliminary results showed that it is impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize the flow rate of slurry to overcome depth type filters weak-point, and to install the high spray of de-ionized Water (DIW) with high pressure.

• 한국생산제조학회지
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• 제23권6호
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• pp.547-554
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• 2014

CVD SiC is a perfect material used for molds/dies in hot press molding of glass lens. In its fabrication process, nano-precision polishing is essential finally. For this purpose, a novel polishing method using MCF (Magnetic Compound Fluid) slurry is proposed. In this method, MCF slurry is supplied into a given gap between the workpiece and a MCF slurry carrier, and constrained within the polishing zone by magnetic forces from permanent magnet. In this paper, after an experimental rig used to actually realize the proposed method has been constructed, the fundamental polishing characteristics of CVD SiC such as the effects of process parameters including MCF slurry composition on work-surface roughness were experimentally investigated. As a result, nano-precision surface finish of CVD SiC was successfully attained with MCF slurry and the optimum process parameters for obtaining the smoothest work-surface were determined.

• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2008년도 하계학술발표대회 논문집
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• pp.1105-1110
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• 2008

An experimental study was performed to control Ice Packing Factor (IPF) of ice slurry in a pipe in a real time. This paper presented the concept that IPF can be adjusted by the amount of the solution contained to ice slurry. Based on this concept, we designed IPF controller consisting of the outlet tube providing ice slurry and the upper tube discharging only a solution through holes, and investigated the technical validity and efficiency of the controller experimentally. As a result, the original proposed IPF controller could not control IPF of ice slurry in a pipe. This is because an ice of ice slurry was drained out into not only the outlet but also the upper of the controller due to the size of the holes relatively large compared to the ice particle. Therefore, we changed the hole size of IPF controller surface using fine meshes and then, observed that IPF in a pipe was increased by $4{\sim}7$ percent when the hole size was $80{\mu}m$ and less.

• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.707-713
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• 2001

As the integrated circuit device shrinks to smaller dimensions, chemical mechanical polishing (CMP) process was requirdfo the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gest thinner, micro-scratches are becoming as major defects. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. To prevent agglomerated slurry particle from inflow, we installed 0.5${\mu}{\textrm}{m}$ point of use (POU) filter, which is depth-type filter and has 80% filtering efficiency for the 1.0${\mu}{\textrm}{m}$ size particle. In this paper, we studied the relationship between defect generation and polished wafer counts to understand the exact efficiency fo the slurry filteration, and to find out the appropriate pad usage. Our experimental results showed that it sis impossible to prevent defect-causing particles perfectly through the depth-type filter. Thus, we suggest that it is necessary to optimize the slurry flow rate, and to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of depth type filter.