• Journal of the Korean Society for Precision Engineering
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• v.34 no.2
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• pp.101-106
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• 2017

The chemical mechanical planarization (CMP) process combines the chemical effect of slurry with the mechanical effect of abrasive (slurry)-wafer-pads The slurry delivery system has a notable effect on polishing results, because the slurry distribution is changed by the supply method. Thus, the investigation of slurry pumps and nozzles with regard to the slurry delivery system becomes important. This paper investigated the effect of a centrifugal slurry pump on a spray nozzle system in terms of uniform slurry supply under a rotating copper (Cu) wafer, based on experimental results and computational fluid dynamics (CFD). In conventional tools, the slurry is unevenly and discontinuously supplied to the pad, due to a pulsed flow caused by the peristaltic pump and distributed in a narrow area by the tube nozzle. Adopting the proposed slurry delivery system provides a higher uniformity and lowered shear stress than usual methods. Therefore, the newly developed slurry delivery system can improve the CMP performance.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.601-602
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry(MAS). In order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$,$CeO_2$, and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• Proceedings of the KIEE Conference
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• 2006.07d
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• pp.2233-2234
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry(MAS). In order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$, $CeO_2$,and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• Proceedings of the KIEE Conference
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• 2006.07d
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• pp.2235-2236
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry(MAS). In order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$, $CeO_2$,and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.378-381
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• 2003

The chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing However, cost of ownership (COO) and cost of consumables (COC) were relatively increased because of expensive slurry. In this paper, the effects of different slurry composition on the oxide CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity. We prepared the various kinds of slurry. In order to save the costs of slurry, the original slurry was diluted by de-ionized water (DIW). And then, alunima abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.6
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• pp.465-470
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• 2003

The chemical mechanical polishing (CMP) process has been widely used for the global planarization of multi-layer structures in semiconductor manufacturing. The CMP process can be optimized by several parameters such as equipment, consumables (pad, backing film and slurry), process variables and post-CMP cleaning. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, the slurry dominates more than 40 %. In this paper, we have studied the CMP characteristics of diluted silica slurry by adding of raw alumina abrasives and annealed alumina abrasives. As an experimental result, we obtained the comparable slurry characteristics compared with original silica slurry in the view-point of high removal rate and low non-uniformity. Therefore, we can reduce the cost of consumables(COC) of CMP process for ULSI applications.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1267-1268
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry (MAS). In order to save the costs of slurry, the original silica slurry was diluted by do-ionized water (DIW). And then, $ZrO_2,CeO_2$, and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1727-1728
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry(MAS). In order to save the costs of slurry, the original silica slurry was diluted by do-ionized water (DIW). And then, $ZrO_2$,$CeO_2$, and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.380-381
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• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry (MAS). In order to save the costs of slurry, the original silica slurry was diluted by de-ionized water (DIW). And then, $ZrO_2$, $CeO_2$, and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.39-42
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• 2002

Recently, CMP (chemical mechanical polishing) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, COO (cost of ownership) and COC (cost of consumables) were relatively increased because of expensive slurry. In this paper, we have studied the possibility of recycle of reused silica slurry in order to reduce the costs of CMP slurry. The post-CMP thickness and within-wafer non-uniformity(WIWNU) were measured as a function of different slurry composition. As a experimental result, the performance of reused slurry with annealed silica abrasive of 2 wt% contents was showed high removal rate and low non-uniformity. Therefore, we propose two-step CMP process as follows In the first-step CMP, we can polish the thick and rough film surface using remaked slurry, and then, in the second-step CMP, we can polish the thin film and fine pattern using original slurry. In summary, we can expect the saving of high costs of slurry.