• Title/Summary/Keyword: page replacement algorithm

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Development of Flash Memory Page Management Techniques

  • Kim, Jeong-Joon
    • Journal of Information Processing Systems
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    • v.14 no.3
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    • pp.631-644
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    • 2018
  • Many studies on flash memory-based buffer replacement algorithms that consider the characteristics of flash memory have recently been developed. Conventional flash memory-based buffer replacement algorithms have the disadvantage that the operation speed slows down, because only the reference is checked when selecting a replacement target page and either the reference count is not considered, or when the reference time is considered, the elapsed time is considered. Therefore, this paper seeks to solve the problem of conventional flash memory-based buffer replacement algorithm by dividing pages into groups and considering the reference frequency and reference time when selecting the replacement target page. In addition, because flash memory has a limited lifespan, candidates for replacement pages are selected based on the number of deletions.

Page Replacement Algorithm for Improving Performance of Hybrid Main Memory (하이브리드 메인 메모리의 성능 향상을 위한 페이지 교체 기법)

  • Lee, Minhoe;Kang, Dong Hyun;Kim, Junghoon;Eom, Young Ik
    • KIISE Transactions on Computing Practices
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    • v.21 no.1
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    • pp.88-93
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    • 2015
  • In modern computer systems, DRAM is commonly used as main memory due to its low read/write latency and high endurance. However, DRAM is volatile memory that requires periodic power supply (i.e., memory refresh) to sustain the data stored in it. On the other hand, PCM is a promising candidate for replacement of DRAM because it is non-volatile memory, which could sustain the stored data without memory refresh. PCM is also available for byte-addressable access and in-place update. However, PCM is unsuitable for using main memory of a computer system because it has two limitations: high read/write latency and low endurance. To take the advantage of both DRAM and PCM, a hybrid main memory, which consists of DRAM and PCM, has been suggested and actively studied. In this paper, we propose a novel page replacement algorithm for hybrid main memory. To cope with the weaknesses of PCM, our scheme focuses on reducing the number of PCM writes in the hybrid main memory. Experimental results shows that our proposed page replacement algorithm reduces the number of PCM writes by up to 80.5% compared with the other page replacement algorithms.

A novel page replacement policy associated with ACT-R inspired by human memory retrieval process (인간 기억 인출 과정을 응용하여 설계된 ACT-R 기반 페이지 교체 정책)

  • Roh, Hong-Chan;Park, Sang-Hyun
    • The KIPS Transactions:PartD
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    • v.18D no.1
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    • pp.1-8
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    • 2011
  • The cache structure, which is designed for assuring fast accesses to frequently accessed data, resides on the various levels of computer system hierarchies. Many studies on this cache structure have been conducted and thus many page-replacement algorithms have been proposed. Most of page-replacement algorithms are designed on the basis of heuristic methods by using their own criteria such as how recently pages are accessed and how often they are accessed. This data-retrieval process in computer systems is analogous to human memory retrieval process since the retrieval process of human memory depends on frequency and recency of the retrieval events as well. A recent study regarding human memory cognition revealed that the possibility of the retrieval success and the retrieval latency have a strong correlation with the frequency and recency of the previous retrieval events. In this paper, we propose a novel page-replacement algorithm by utilizing the knowledge from the recent research regarding human memory cognition. Through a set of experiments, we demonstrated that our new method presents better hit-ratio than the LRFU algorithm which has been known as the best performing page-replacement algorithm for DBMS caches.

Active Page Replacement Policy for DRAM & PCM Hybrid Memory System (DRAM&PCM 하이브리드 메모리 시스템을 위한 능동적 페이지 교체 정책)

  • Jung, Bo-Sung;Lee, Jung-Hoon
    • IEMEK Journal of Embedded Systems and Applications
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    • v.13 no.5
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    • pp.261-268
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    • 2018
  • Phase Change Memory(PCM) with low power consumption and high integration attracts attention as a next generation nonvolatile memory replacing DRAM. However, there is a problem that PCM has long latency and high energy consumption due to the writing operation. The PCM & DRAM hybrid memory structure is a fruitful structure that can overcome the disadvantages of such PCM. However, the page replacement algorithm is important, because these structures use two memory of different characteristics. The purpose of this document is to effectively manage pages that can be referenced in memory, taking into account the characteristics of DRAM and PCM. In order to manage these pages, this paper proposes an page replacement algorithm based on frequently accessed and recently paged. According to our simulation, the proposed algorithm for the DRAM&PCM hybrid can reduce the energy-delay product by around 10%, compared with Clock-DWF and CLOCK-HM.

Analyzing Virtual Memory Write Characteristics and Designing Page Replacement Algorithms for NAND Flash Memory (NAND 플래시메모리를 위한 가상메모리의 쓰기 참조 분석 및 페이지 교체 알고리즘 설계)

  • Lee, Hye-Jeong;Bahn, Hyo-Kyung
    • Journal of KIISE:Computer Systems and Theory
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    • v.36 no.6
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    • pp.543-556
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    • 2009
  • Recently, NAND flash memory is being used as the swap device of virtual memory as well as the file storage of mobile systems. Since temporal locality is dominant in page references of virtual memory, LRU and its approximated CLOCK algorithms are widely used. However, cost of a write operation in flash memory is much larger than that of a read operation, and thus a page replacement algorithm should consider this factor. This paper analyzes virtual memory read/write reference patterns individually, and observes the ranking inversion problem of temporal locality in write references which is not observed in read references. With this observation, we present a new page replacement algorithm considering write frequency as well as temporal locality in estimating write reference behaviors. This new algorithm dynamically allocates memory space to read/write operations based on their reference patterns and I/O costs. Though the algorithm has no external parameter to tune, it supports optimized implementations for virtual memory systems, and also performs 20-66% better than CLOCK, CAR, and CFLRU algorithms.

Page Replacement Policy of DRAM&PCM Hybrid Memory Using Two Locality (지역성을 이용한 하이브리드 메모리 페이지 교체 정책)

  • Jung, Bo-Sung;Lee, Jung-Hoon
    • IEMEK Journal of Embedded Systems and Applications
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    • v.12 no.3
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    • pp.169-176
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    • 2017
  • To replace conventional DRAM, many researches have been done on nonvolatile memories. The DRAM&PCM hybrid memory is one of the effective structure because it can utilize an advantage of DRAM and PCM. However, in order to use this characteristics, pages can be replaced frequently between DRAM and PCM. Therefore, PCM still has major problem that has write-limits. Therefore, it needs an effective page management method for exploiting each memory characteristics dynamically and adaptively. So we aim reducing an average access time and write count of PCM by utilizing two locality for an effective page replacement. We proposed a page selection algorithm which is recently requested to write in DRAM and an algorithm witch uses two locality in PCM. According to our simulation, the proposed algorithm for the DRAM&PCM hybrid can reduce the PCM write count by around 22% and the average access time by 31% given the same PCM size, compared with CLOCK-DWF algorithm.

Page Replacement for Write References in NAND Flash Based Virtual Memory Systems

  • Lee, Hyejeong;Bahn, Hyokyung;Shin, Kang G.
    • Journal of Computing Science and Engineering
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    • v.8 no.3
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    • pp.157-172
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    • 2014
  • Contemporary embedded systems often use NAND flash memory instead of hard disks as their swap space of virtual memory. Since the read/write characteristics of NAND flash memory are very different from those of hard disks, an efficient page replacement algorithm is needed for this environment. Our analysis shows that temporal locality is dominant in virtual memory references but that is not the case for write references, when the read and write references are monitored separately. Based on this observation, we present a new page replacement algorithm that uses different strategies for read and write operations in predicting the re-reference likelihood of pages. For read operations, only temporal locality is used; but for write operations, both write frequency and temporal locality are used. The algorithm logically partitions the memory space into read and write areas to keep track of their reference patterns precisely, and then dynamically adjusts their size based on their reference patterns and I/O costs. Without requiring any external parameter to tune, the proposed algorithm outperforms CLOCK, CAR, and CFLRU by 20%-66%. It also supports optimized implementations for virtual memory systems.

Design and Implementation of a Web-based Simulator for Educating Page Replacement Algorithms (페이지 교체 알고리즘 교육을 위한 웹 기반 시뮬레이터의 설계 및 구현)

  • Koh, Jeong-Gook
    • Journal of Korea Multimedia Society
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    • v.15 no.4
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    • pp.552-559
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    • 2012
  • Operating Systems is a discipline which handles complex and concepts related to its components and how an operating system works. However, most of the OS courses have been textbook-oriented theoretical classes. Therefore, many instructors have tried to make use of educational tools to help students understand a lecture and arouse their interests consistently. This paper describes the design and implementation of a web-based page replacement simulator which shows the process of page replacement algorithms visually. The academic achievement evaluation and t-test results for 2010's students and 2011's show that the differences of the correct answer ratios for the exam about page replacement algorithms and the scores between two groups are meaningful. And the results of survey show that a page replacement simulator is useful as an educational tool which causes the interests about operating systems and enhances the understanding of a lecture.

Enhancing LRU Buffer Replacement Policy with Delayed Write of Not-cold-dirty-pages for Flash Memory (플래시 메모리를 위한 Not-cold-Page 쓰기지연을 통한 LRU 버퍼교체 정책 개선)

  • Jung Ho-Young;Park Sung-Min;Cha Jae-Hyuk;Kang Soo-Yong
    • Journal of KIISE:Computer Systems and Theory
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    • v.33 no.9
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    • pp.634-641
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    • 2006
  • Flash memory has many advantages like non-volatility and fast I/O speed, but it has also disadvantages such as not-in-place-update data and asymmetric read/write/erase speed. For the performance of flash memory storage, it is essential for the buffer replacement algorithms to reduce the number of write operations that also affects the number of erase operations. A new buffer replacement algorithm is proposed in this paper, that delays the writes of not-cold-dirty pages in the buffer cache of flash storage. We show that this algorithm effectively decreases the number of write operations and erase operations without much degradation of hit ratio. As a result overall performance of flash I/O speed is improved.

High Performance PCM&DRAM Hybrid Memory System (고성능 PCM&DRAM 하이브리드 메모리 시스템)

  • Jung, Bo-Sung;Lee, Jung-Hoon
    • IEMEK Journal of Embedded Systems and Applications
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    • v.11 no.2
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    • pp.117-123
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    • 2016
  • In general, PCM (Phase Change Memory) is unsuitable as a main memory because it has limitations: high read/write latency and low endurance. However, the DRAM&PCM hybrid memory with the same level is one of the effective structures for a next generation main memory because it can utilize an advantage of both DRAM and PCM. Therefore, it needs an effective page management method for exploiting each memory characteristics dynamically and adaptively. So we aim reducing an access time and write count of PCM by using an effective page replacement. According to our simulation, the proposed algorithm for the DRAM&PCM hybrid can reduce the PCM access count by around 60% and the PCM write count by 42% given the same PCM size, compared with Clock-DWF algorithm.