IEMEK Journal of Embedded Systems and Applications (대한임베디드공학회논문지)

Institute of Embedded Engineering of Korea (대한임베디드공학회)
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Page Replacement Policy of DRAM&PCM Hybrid Memory Using Two Locality

지역성을 이용한 하이브리드 메모리 페이지 교체 정책

  • Received : 2017.05.12
  • Accepted : 2017.05.25
  • Published : 2017.06.30
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Abstract

To replace conventional DRAM, many researches have been done on nonvolatile memories. The DRAM&PCM hybrid memory is one of the effective structure because it can utilize an advantage of DRAM and PCM. However, in order to use this characteristics, pages can be replaced frequently between DRAM and PCM. Therefore, PCM still has major problem that has write-limits. Therefore, it needs an effective page management method for exploiting each memory characteristics dynamically and adaptively. So we aim reducing an average access time and write count of PCM by utilizing two locality for an effective page replacement. We proposed a page selection algorithm which is recently requested to write in DRAM and an algorithm witch uses two locality in PCM. According to our simulation, the proposed algorithm for the DRAM&PCM hybrid can reduce the PCM write count by around 22% and the average access time by 31% given the same PCM size, compared with CLOCK-DWF algorithm.

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