• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.59-64
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• 2008

In this paper, white polymer light emitting diodes(WPLEDs) were fabricated and investigated the electrical and optical properties for the prepared devices. ITO(indium tin oxide) and PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)] as anode and hole injection materials, PFO [poly(9,9-dioctylfluorene)] and MEH-PPV [poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and guest materials, respectively. The LiF(lithium flouride) and Al(aluminum) were used electron injection materials and cathode materials. Finally, the WPLED with structure of ITO/PEDOT:PSS/PFO:MEH-PPV/LiF/Al was fabricated. The prepared WPLED showed white emission with CIE coordinates of (x=0.36, y=0.35) at the applied voltage of 9V. The maximum current density and luminance were about $740mA/cm^2\;and\;900cd/m^2$ at 13V, respectively. And the maximum current efficiency was 0.37 cd/A at $200cd/m^2$ in luminance.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.43-49
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• 2010

Direct printing technology is an attractive metallization method, which has become immerging as "Green technology" to the conventional photolithography, on account of low cost, simple process and environment-friendliness. In order to commercialize the printed electronics in industry, it is essential to evaluate the electrical properties of conductive circuits using direct printing technology. In this contribution, we focused on the electrical characteristics of inkjet-printed circuits. A Cu nanoink was inkjet-printed onto a Bisaleimide triazine(BT) substrate with parallel transmission line(PTL) and coplanar waveguide(CPW) type, then was sintered at $250^{\circ}C$ for 30 min. We calculated the resistivity of printed circuits through direct current resistance by the measurement of I-V curve: the resistivity was approximately 0.558 ${\mu}{\Omega}{\cdot}cm$ which is about 3.3 times that of bulk Cu. Cascade's probe system in the frequency range from 0 to 30 GHz were employed to measure the Scattering parameter(S-parameter) with or without a gap between the substrate and the probe station chuck. The result of measured S-parameter showed that all printed circuits had over 5 dB of return loss in the entire frequency range. In the curve of insertion loss, $S_{21}$, showed that the PTL type circuits had better transmission of radio frequency (RF) than CPW type.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.12 no.2
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• pp.117-123
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• 2006

To mass-product useful biopolymer films, chitosan/gelatin blend films were prepared by solution casting method. Effect of mixing ratio, tensile strength(TS), elongation(${\Delta}E$) at break, total color difference(E), water vapor permeability(WVP) and oxygen permeability(OP) on chitosan/gelatin blend films properties were investigated. TS, ${\Delta}E$, E, WVP and OP values of chitosan/gelatin blend films were 43.43-38.30 MPa, 9.02-15.09%, 1.28-3.81, $0.8420-0.9673ng{\cdot}m/m^2{\cdot}s{\cdot}Pa$ and $1.5472{\times}10^{-7}-1.5424{\times}10^{-7}mL{\cdot}{\mu}m/m^2{\cdot}s{\cdot}Pa$, respectively. TS of the blend films decreased, while E and E of the blend films increased with increasing chitosan content. WVP and OP of the blend films did not show any significant relationship with mixing ratio and thickness of the blend films. OP of the blend films were lower than those of low density polyethylene and oriented polypropylene.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.55-60
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• 2012

In order to develop electroless-plated Nickel Phosphate (Ni-P) as a contact material for high efficient low-cost silicon solar cells, we evaluated the effect of ambient thermal annealing on the degradation behavior of interfacial adhesion energy between electroless-plated Ni-P and silicon solar cell wafers by applying 4-point bending test method. Measured interfacial adhesion energies decreased from 14.83 to 10.83 J/$m^2$ after annealing at 300 and $600^{\circ}C$, respectively. The X-ray photoelectron spectroscopy analysis suggested that the bonding interface was degraded by environmental residual oxygen, in which the oxidation inhibit the stable formation of Ni silicide phase between electroless-plated Ni-P and silicon interface.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.39-45
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• 2012

Three-dimensional integrated circuit(3D IC) technology has become increasingly important due to the demand for high system performance and functionality. In this work, BOE and HF wet etching of Cu line surfaces after CMP were conducted for Cu-Cu pattern direct bonding. Step height of Cu and $SiO_2$ as well as Cu dishing after Cu CMP were analyzed by the 3D-Profiler. Step height increased and Cu dishing decreased with increasing BOE and HF wet etching times. XPS analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE and HF wet etching treatment. BOE treatment showed not only the effective $SiO_2$ etching but also reduced dishing and Cu surface oxide rather than HF treatment, which can be used as an meaningful process data for reliable Cu-Cu pattern bonding characteristics.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.2
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• pp.33-38
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• 2020

In the photoelectrochemical (PEC) water splitting, GaN is one of the most promising photoanode materials due to high stability in electrolytes and adjustable energy band position. However, the application of GaN is limited because of low efficiency. To improve solar to hydrogen conversion efficiency, we introduce a Cobalt Phosphate (Co-pi) catalyst by photo-electrodeposition. The Co-pi deposition GaN were characterized by SEM, EDS, and XPS, respectively, which illustrated that Co-pi was successfully decorated on the surface of GaN. PEC measurement showed that photocurrent density of GaN was 0.5 mA/㎠ and that of Co-pi deposited GaN was 0.75 mA/㎠. Impedance and Mott-Schottky measurements were performed, and as a result of the measurement, polarization resistance (R_p) and increased donor concentration (N_D) values decreased from 50.35 Ω to 34.16 Ω were confirmed. As a result of analyzing the surface components before and after the water decomposition, it was confirmed that the Co-pi catalyst is stable because Co-pi remains even after the water decomposition. Through this, it was confirmed that Co-pi is effective as a catalyst for improving GaN efficiency, and when applied as a catalyst to other photoelectrodes, it is considered that the efficiency of the PEC system can be improved.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.11-16
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• 2002

In this study, the dry etching characteristics of $SrBi_2Ta_2O_9$ (SBT) thin films were investigated by using ICP-RIE (inductively coupled plasma-reactive ion etching). The etching damage and degradation were analyzed with XPS (X-ray photoelectron spectroscopy) and C-V (Capacitance-Voltage) measurement. The etching rate increased with increasing the ICP power and the capacitively coupled plasma (CCP) power. The etch rate of 900$\AA$/min was obtained with 700 W of ICP power and 200 W of CCP power. The main problem of dry etching is the degradation of the ferroelectric material. The damage-free etching characteristics were obtained with the $Ar/C1_2/CHF_3$ gas mixture of 20/14/2 when the ICP power and CCP power were biased at 700 W and 200 W, respectively. The experimental results show that the dry etching process with ICP-RIE is applicable to the fabrication of the single transistor type ferroelectric memory device.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.1
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• pp.45-50
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• 2009

By Laser Through-Silicon-Via process, debris and particles occur when you are forming. Therefore the research of TSV cleaning become important to remove those particles and debris. Both chemical cleaning method that uses a surfactant and physical cleaning method that uses a brush were studied with the via of $30{\mu}m$ diameter and $100{\mu}m$ depth on the 8 inch CMOS Image Sensor wafer. On the DI water and a surfactant in mixture ratio of 2:1, debris show $73{\mu}m^2$ per $0.054mm^2$. Cleaning is superior by lower mixture ratio of DI water and surfactant. In addition, It is less than 5% of debris distribution in the laser condition changed by Laser's frequency and its speed and cleaning had no effect. In the physical cleaning, there are no crack and damage when the system condition is set by $1000{\sim}3000rpm$ strip, $50{\sim}3000rpm$ rinsing, and $200{\sim}300rpm$ brushing Therefore, debris and particles can be removed by enforced chemical method and physical method.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.43-48
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• 2017

Conductive $Sn_xO_y$ thin films were fabricated via RF reactive sputtering using SnO:Sn (80:20 mol%) composite target. The composite target was used to produce a chemically stable composition of $Sn_xO_y$ thin film while controlling structural defects by chemical reaction between tin and oxygen. During sputtering pressure, RF power, and substrate temperature were fixed, and oxygen partial pressure was varied from 0% to 12%. Annealing process was carried out at $300^{\circ}C$ for 1 hour in vacuum. Except $P_{O2}=0%$ sample, all samples showed the transmittance of 80~90% and amorphous phase before and after annealing. Electrically stable p-type $Sn_xO_y$ thin film with high transmittance was only obtained from the oxygen partial pressure at 12%. The carrier concentration and mobility for the $P_{O2}=12%$ were $6.36{\times}10^{18}cm^{-3}$ and $1.02cm^2V^{-1}s^{-1}$ respectively after annealing.

• Clean Technology
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• v.24 no.4
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• pp.269-274
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• 2018

In this study, Life Cycle Assessment (LCA) of wet tissue manufacturing process was performed. The wet tissue manufacturing process consists of preparation of wetting agent (chemical liquid), impregnation of nonwoven fabric into wetting agent and primary and secondary packaging. Data and information were collected on the input and output of the actual process from a certain company and the database of the Korea Ministry of Environment and some foreign countries (when Korean unavailable) were employed to connect the upper and the lower process flow. Based on the above and the potential environmental impacts of the wet tissue manufacturing process were calculated. As a result of the characterization, Ozone Layer Depletion (OD) is 3.46.E-06 kg $CFC_{11}$, Acidification (AD) is 5.11.E-01 kg $SO_2$, Abiotic Resource Depletion (ARD) is $3.52.E+00\;1yr^{-1}$, Global Warming (GW) is 1.04.E+02 kg $CO_2$, Eutrophication (EUT) is 2.31.E-02 kg ${PO_4}^{3-}$, Photochemical Oxide Creation (POC) was 2.22.E-02 kg $C_2H_4$, Human Toxicity (HT) was 1.55.E+00 kg 1,4 DCB and Terrestrial Ecotoxicity (ET) was 5.82.E-04 kg 1,4 DCB. In order to reduce the environmental impact of the manufacturing process, it is necessary to improve the overall process as other general cases and change the raw materials including packaging materials with less environmental impact. Conclusively, the energy consumed in the manufacturing process has emerged as a major issue, and this needs to be reconsidered other options such as alternative energy. Therefore, it is recommended that a process system should be redesigned to improve energy efficiency and to change to an energy source with lower environmental impact. Due to the nature of LCA, the final results of this study can be varied to some extent depending on the type of LCI DB employed and may not represent of all wet tissue manufacturing processes in the current industry.