• Title/Summary/Keyword: packaging automation

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Pill Counting and Packaging Automation Using Non-contact Photo Sensor and Recognition of Characterized Feature (비접촉식 광학센서와 특징량 인식에 의한 알약 계수 및 포장 자동화)

  • 원민규;윤상천;이순걸
    • 제어로봇시스템학회:학술대회논문집
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    • 2000.10a
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    • pp.9-9
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    • 2000
  • Accurate counting and packaging pills is one of the most fundamental works of the pharmaceutical industry. But it is so labor consuming and very hard to be automated. As the pharmaceutical industry is growing bigger, the need of counting and packaging automation is increasing to obtain effective mass production. Precise and quick sensing is required in the counting and processing of quickly dropping pills to improve the productivity. There are many trials for this automation and automatic machine. But the performance of the existing counting machine varies with the size, shape and the dispersion degree of pills In this research, authors design the counting and packing machine of medicinal pills that is more accurate and highly trustworthy After getting analog signal from optical sensor, pill passage is discriminated from chosen characteristic feature using microprocessor.

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Structural Analysis of Cold Draw Bar Packaging Automation System (Cold Drawn Bar 포장 자동화 기계설비에 관한 구조해석)

  • Chin, Do-Hun
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.19 no.2
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    • pp.63-68
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    • 2020
  • In this study, we analyzed a cold draw (CD) bar packaging automation facility to examine its structural safety. The structural analysis focused on the frame part of the automatic packing machine for the CD round rod widely used in the industrial field, as well as the package supply device, banding suit, and crane part. As a result, we concluded that the structural safety for the banding suit, crane, and package supply device have been secured (safety factors of 9.8, 7.5, and 14.5, respectively). In addition, the safety factor of the transfer was 4.0.

Thickness Dependent Temperature Accelerated Dielectric Break-down Strength of On-wafer Low Dielectric Constant Polymer Films

  • Kim, H. K.;Lee, S. W.;F. G. Shi;B. Zhao
    • KIEE International Transactions on Electrophysics and Applications
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    • v.2C no.6
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    • pp.281-286
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    • 2002
  • The temperature accelerated dielectric breakdown strength of on-wafer low-k dielectric polymer films with thicknesses ranging from 94 nm to 1141 nm is investigated by using the current-voltage characteristic measurements with MIS structures. The temperature dependence of dielectric strength is demonstrated to be Arrhenious for all thicknesses. However, the activation energy is found to be strongly thickness dependent. It follows an exponential relationship rather than being a single value, i.e., the activation energy increase significantly as film thickness increases for the thickness below 500 nm, but it is almost constant for the thickness above 500 nm. This relationship suggests that the change of the activation energy corresponding to different film thickness is closely related to the temperature dependence of the electron trapping/detrapping process in polymer thin films, and is determined by both the trapping rate and the detrapping rate. Thinner films need less energy to form a conduction path compared to thicker films. Hence, it leads to smaller activation energy in thinner films, and the activation energy increases with the increase in film thickness. However, a nearly constant value of the activation energy is achieved above a certain range of film thickness, indicating that the trapping rate and detrapping rate is almost equal and eventually the activation energy approaches the value of bulk material.

An investigation on dicing 28-nm node Cu/low-k wafer with a Picosecond Pulse Laser

  • Hsu, Hsiang-Chen;Chu, Li-Ming;Liu, Baojun;Fu, Chih-Chiang
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.4
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    • pp.63-68
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    • 2014
  • For a nanoscale Cu/low-k wafer, inter-layer dielectric (ILD) and metal layers peelings, cracks, chipping, and delamination are the most common dicing defects by traditional diamond blade saw process. Sidewall void in sawing street is one of the key factors to bring about cracks and chipping. The aim of this research is to evaluate laser grooving & mechanical sawing parameters to eliminate sidewall void and avoid top-side chipping as well as peeling. An ultra-fast pico-second (ps) laser is applied to groove/singulate the 28-nanometer node wafer with Cu/low-k dielectric. A series of comprehensive parametric study on the recipes of input laser power, repetition rate, grooving speed, defocus amount and street index has been conducted to improve the quality of dicing process. The effects of the laser kerf geometry, grooving edge quality and defects are evaluated by using scanning electron microscopy (SEM) and focused ion beam (FIB). Experimental results have shown that the laser grooving technique is capable to improve the quality and yield issues on Cu/low-k wafer dicing process.

Development of Pill Counting Algorithm and Pill Counting Machine Using Non-contact Photo Sensor (비접촉식 광학센서를 이용한 알약계수 알고리즘과 알약 계수기의 개발)

  • Lee Soon-Geul;Lim Tae Gyoon;Rhim Sungsoo
    • Journal of Institute of Control, Robotics and Systems
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    • v.11 no.9
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    • pp.810-815
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    • 2005
  • As the pharmaceutical industry grows and becomes more competitive, the need of automation increases to establish effective mass production and to maintain consistent quality control. Accurate counting and packing of medicinal pills is one of the most essential processes that the automation can benefit. In conventional automated counting and packing processes, the performance of counting process varies with the size, the shape and the dispersion degree of pills. In this research, the authors developed a new pill-counting algorithm based on carefully analyzed characteristics of the pill-drop behavior. Also a new scheme for the packing of an exact number of pills has been implemented. A pill counting and packing machine with the new pill-counting algorithm and the new packing scheme has been constructed and put in an actual production line. To achieve precise and quick sensing of pills dropping at a high speed from the preceding processors, the machine uses non-contact photo sensors. Experimental results from the actual process using the machine are included to verify the effectiveness of the proposed algorithm and the machine.

Development of an Automatic Cap Opening And Closing Device for Unmanned Chemical Manufacturing Processes (화학제조공정의 무인화를 위한 자동 캡 개폐장치 개발)

  • Jun-Sik Lee;Oh-Seong Kwon;Jun-Ho Lee
    • Journal of the Korean Society of Industry Convergence
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    • v.27 no.1
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    • pp.71-76
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    • 2024
  • Automatic production systems are constantly advancing technologies to improve productivity and safety. Specifically, liquid filling machines are primarily utilized to package products into drums after manufacturing process in the hazardous chemical industry. Most existing filling machines allow the operator to open the drum cap and inject the product directly or semi-automation. In this study, we have developed a cap opening and closing mechanism onto the existing drum filling machine, enabling automatic and safe cap manipulation while filling the product in the IBC tank. By applying the appropriate torque value through numerical analysis, we confirmed that the system worked without any problems during the process of opening and closing the cap. Therefore, it is expected that the developed machine will give more production and reduce human efforts without risk in the chemical packaging industry.

Warpage Simulation by the CTE mismatch in Blanket Structured Wafer Level 3D packaging

  • Kim, Seong Keol;Jang, Chong-Min;Hwang, Jung-Min;Park, Man-Chul
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.22 no.1
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    • pp.168-172
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    • 2013
  • In 3D wafer-stacking technology, one of the major issues is wafer warpage. Especially, The important reason of warpage has been known due to CTE(Coefficient of Thermal Expansion) mismatch between materials. It was too hard to choose how to make the FE model for blanket structured wafer level 3D packaging, because the thickness of each layer in wafer level 3D packaging was too small (micro meter or nano meter scale) comparing with diameter of wafer (6 or 8 inches). In this study, the FE model using the shell element was selected and simulated by the ANSYS WorkBench to investigate effects of the CTE on the warpage. To verify the FE model, it was compared by experimental results.

Wafer Level Package Design Optimization Using FEM (공정시간 및 온도에 따른 웨이퍼레벨 패키지 접합 최적설계에 관한 연구)

  • Ko, Hyun-Jun;Lim, Seung-Yong;Kim, Hee-Tea;Kim, Jong-Hyeong;Kim, Ok-Rae
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.23 no.3
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    • pp.230-236
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    • 2014
  • Wafer level package technology is added to the surface of wafer circuit packages to create a semiconductor technology that can minimize the size of the package. However, in conventional packaging, warpage and fracture are major concerns for semiconductor manufacturing. We optimized the wafer dam design using a finite element method according to the dam height and heat distribution thermal properties. The dam design influences the uniform deposition of the image sensor and prevents the filling material from overflowing. In this study, finite element analysis was employed to determine the key factors that may affect the reliability performance of the dam package. Three-dimensional finite element models were constructed using the simulation software ANSYS to perform the dam thermo-mechanical simulation and analysis.

The Effect of Vacuum Annealing of Tin Oxide Thin Films Obtained by RF Sputtering (RF Sputtering법에 의한 산화주석 박막의 진공 열처리 효과)

  • Kim, Sun-Phil;Kim, Young-Rae;Kim, Sung-Dong;Kim, Sarah Eun-Kyung
    • Journal of the Korean Ceramic Society
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    • v.48 no.4
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    • pp.316-322
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    • 2011
  • Tin oxide thin films were deposited by rf reactive sputtering and annealed at $400^{\circ}C$ for 1 h in vacuum. To minimize the influence such as reduction, oxidation, and doping on tin oxide thin films during annealing, a vacuum ambient annealing was adopted. The structural, optical, and electrical properties of tin oxide thin films were characterized by X-ray diffraction, atomic force microscope, UV-Vis spectrometer, and Hall effect measurements. After vacuum annealing, the grain size of all thin films was slightly increased and the roughness ($R_a$) was improved, however irregular and coalesced shapes were observed from the most of the films. These irregular and coalesced crystal shapes and the possible elimination of intrinsic defects might have caused a decrease in both carrier concentration and mobility, which degrades electrical conductivity.