• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.221-226
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• 2007

DBR (distributed Bragg reflectors) PSi (porous silicon) composite films displaying dual optical properties, both optical reflectivity and photoluminescence had been developed. DBR PSi samples were prepared by electrochemical etch of heavily doped $p^{++}-type$ silicon wafers (boron doped, polished on the <100> face, resistivity of $0.8-1.2m{\Omega}-cm$, Siltronix, Inc.). Free-standing DBR PSi films were treated with PMMA (polymethyl methacrylate) to produce flexible, stable composite materials in which the PSi matrix is covered with PMMA containing photoluminescent polysiloles. Optical characteristics of DBR PSi/polysilole-impregnated PMMA composite materials exhibit both their photonic reflectivity at 565 nm and photoluminescence at 510 nm, simultaneously. A possible application of this materials will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.79-79
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• 1999

The varous techniques for fabrication of si or metal tip as a field emission electron source have been reported due to great potential capabilities of flat panel display application. In this report, 240nm thermal oxide was initially grown at the p-type (100) (5-25 ohm-cm) 4 inch Si wafer and 310nm Si3N4 thin layer was deposited using low pressure chemical vapor deposition technique(LPCVD). The 2 micron size dot array was photolithographically patterned. The KOH anisotropic etching of the silicon substrate was utilized to provide V-groove formation. After formation of the V-groove shape, dry oxidation at 100$0^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have a etch-mask for dry etching. The thicknesses of the grown oxides on the (111) surface and on the (100) etch stop surface were found to be ~330nm and ~90nm, respectively. The reactive ion etching by 100 watt, 9 mtorr, 40 sccm Cl2 feed gas using inductively coupled plasma (ICP) system was performed in order to etch ~90nm SiO layer on the bottom of the etch stop and to etch the Si layer on the bottom. The 300 watt RF power was connected to the substrate in order to supply ~(-500)eV. The negative ion energy would enhance the directional anisotropic etching of the Cl2 RIE. After etching, remaining thickness of the oxide on the (111) was measured to be ~130nm by scanning electron microscopy.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1555-1558
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}c$-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_4$ Concentration$[F(SiH_4)/F(SiH_4)+F(H_2)]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c$-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c$-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_2H_6$ to $SiH_4$ gas. The solar cells with structure of Al/nip ${\mu}c$-Si:H/TCO/glass was fabricated with sing1e chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Transactions of the Society of Information Storage Systems
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• v.2 no.2
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• pp.96-99
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• 2006

In this research, a wafer-level transfer method of cantilever away on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

• Journal of the Korean Magnetics Society
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• v.15 no.5
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• pp.287-291
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• 2005

We have investigated and tried to improve the characteristics of the thin $HfO_2$ layer deposited by ALD for fabricating a MOSFET device where the $HfO_2$ film worked as the gate dielectric. The substrate of MOSFET device is p-type (100) silicon wafer over which the $HfO_2$ dielectric layer with thickness of $5\~6\;nm$ has been deposited. Then the $HfO_2$ film was annealed with $1\~20\;atm\;H_2$ gas and subsequently aluminum electrodes was made so that the active area was $5{\times}10^{-5}\;cm^2$. We have found out that the drain current and transconductance increased by $5\~10\%$ when the $H_2$ gas pressure was 20 atm, which significantly contributed to the reliable operation of the high-density MOSFET devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.399-405
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• 1996

The present buried contact (BC) solar cell research at SAIT includes the development of a processing sequence suitable for production of the single sided (SS) BC solar cells. This paper presents some results for large area ($45cm^{2}$) SSBC cells fabricated on FZ and CZ silicon substrates. Cell efficiencies in excess of 18% fabricated on FZ, p-type, 0.5 ohm-cm, and over 16% on CZ p-type, 10~20 ohm-cm, wafers have been demonstrated. Both the FZ and CZ wafers were chemically textured. These results are preliminary and the exploration of double sided (DS) sequence, which is the future BC structure would lead to over 17% and 20% efficiency cells on CZ and FZ substrates respectively. The cost of solar cells can be reduced further if the many high temperature steps can be reduced to only one. This would be very advantageous to very poor quality substrates such as the CZ grown wafers.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.314-314
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• 2012

The dilute magnetic semiconductors (DMS) have been developed to multi-functional electro-magnetic devices. Specially, the Si based DMS formed by ion implantation have strong advantages to improve magnetic properties because of the controllable effects of carrier concentration on ferromagnetism. In this study, we investigated the deep level states of Fe- and Co-ions implanted Si wafer during rapid thermal annealing (RTA) process. The p-type Si (100) wafers with hole concentration of $1{\times}10^{16}cm^{-3}$ were uniformly implanted by Fe and Co ions at a dose of $1{\times}10^{16}cm^{-2}$ with an energy of 60 keV. After RTA process at temperature ranges of $500{\sim}900^{\circ}C$ for 5 min in nitrogen ambient, the Au electrodes with thickness of 100 nm were deposited to fabricate a Schottky contact by thermal evaporator. The surface morphology, the crystal structure, and the defect state for Fe- and Co- ion implanted p-type Si wafers were investigated by an atomic force microscopy, a x-ray diffraction, and a deep level transient spectroscopy, respectively. Finally, we will discuss the physical relationship between the electrical properties and the variation of defect states for Fe- and Co-ions implanted Si wafer after RTA.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.510-515
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• 1994

Yttria-stabilized zirconia(YSZ) films were prepared onto p-type (100) silicon wafer by a plasma-enhanced metallorganic chemical vapor deposition(PE MO CVD) processing involving the application of vapor mixture of tri(2.2.6.6-tetramethyl-3, 5-heptanate) yttrium$[Y(DPM)_3]$, zirconiumtriflouracethyla cetonate$(Zr(tfacac)_4$ and oxygen gas. The x-ray diffraction(XRD) and fourier transform infrared spectra(FT1R) results showed that the deposited YSZ films had a single cubic phase. $Y_2O_3$ content of YSZ film was analyzed by PIXE(partic1e induced x-ray emission). The experimental results by PIXE revealed that 12.lmol%, 20.4mol% and 31.6mol% $Y_2O_3$ could be obtained as the $Y(DPM)_3$ bubbling temperature varied at $160^{\circ}C, 165^{\circ}C$ and $170^{\circ}C$ respectively. The increase of $Y(DPM)_3$ bubbling temperature caused shifting flat band voltage to have a negative value.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.11-15
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• 2000

This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR(DLAR) coating of MgFe$_2$/GeO$_2$. We investigated GeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown GeO$_2$ film showed deposition temperature strong dependence. The GeO$_2$ at 400$\^{C}$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgFe$_2$film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4 ㎛ to 1.1 ㎛. Solar cells with a structure of MgFe$_2$/GeO$_2$/Ag/N$\^$+//p-type Si/P$\^$+//Al were investigated with the without DLAR coatings. We achieved the efficiency of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details about MgFe$_2$,GeO$_2$ films, and cell fabrication parameters are presented in this paper.

• Journal of Technologic Dentistry
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• v.45 no.1
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• pp.1-7
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• 2023

Purpose: To evaluate the marginal and internal fit of metal coping fabricated by a metal three-dimensional (3D) printer that uses selective laser melting (SLM). Methods: An extraoral scanner was used to scan a die of the prepared maxillary right first molar, and the coping was designed using computer-aided design software and saved as an stereo lithography (STL) file. Ten specimens were printed with an SLM-type metal 3D printer (SLM group), and 10 more specimens were fabricated by casting the castable patterns output generated by a digital light processing-type resin 3D printer (casting the 3D printed resin patterns [CRP] group). The fit was measured using the silicon replica technique, and 8 points (A to H) were set per specimen to measure the marginal (points A, H) and internal (points B~G) gaps. The differences among the groups were compared using the Mann-Whitney U-test (α=0.05). Results: The mean of marginal fit in the SLM group was 69.67±18.04 ㎛, while in the CRP group was 117.10±41.95 ㎛. The internal fit of the SLM group was 95.18±41.20 ㎛, and that of the CRP group was 86.35±32 ㎛. As a result of statistical analysis, there was a significant difference in marginal fit between the SLM and CRP groups (p<0.05); however, there was no significant difference in internal fit between the SLM group and the CRP group (p>0.05). Conclusion: The marginal and internal fit of SLM is within the clinically acceptable range, and it seems to be applicable in terms of fit.