• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.816-819
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• 2004

White-emitting OLEDs have been prepared that provide emission close to 6500 K color temperature (D65) with exceptional stability and high efficiency. The combination of host and dopant materials offers significant improvement for full color displays, in terms of power consumption, with minimal changes in color and efficiency with current density. These features are important for fabricating RGB and RGBW full color displays using white OLEDs with color filters.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.291-293
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• 2000

In 64M DRAM, sub-1/4m NMOSFETs with STI(Shallow Trench Isolation), anomalous hump phenomenon of subthreshold region, due to capped p-TEOS/SiN interlayer induced defect, is reported. The hump effect was significantly observed as channel length is reduced, which is completely different from previous reports. Channel Boron dopant redistribution due to the defect should be considered to improve hump characteristics besides consideration of STI comer shape and recess.

• Journal of Electrochemical Science and Technology
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• 제10권2호
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• pp.139-147
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• 2019

Incorporation of CuO nanoparticles during the polymerization of aniline in the presence of ammonium peroxydisulphate as an oxidizing agent and sodium salt of dodecylbenzene sulphonic acid as dopant as well as surfactant yielded water soluble CuO-PANI composite. Comparison of recorded spectra like FTIR, XRD and SEM with reported one confirm the formation of the composite. Analysis by gravimetric method exposes that the synthesized composite is having resistivity against corrosion, with slight variation in efficiency on extending the time duration up to eight hours in strong acidic condition. OCP measurement, potentiodynamic polarization and EIS studies also confirms the suppression ability of composite against corrosion. Riskless working environment could be provided by the synthesized composite during industrial cleaning process.

• Journal of Magnetics
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• 제20권4호
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• pp.331-335
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• 2015

The ferromagnetic and electronic structure for the $Al_xGa_{1-x}P$ and Mn-doped $AlGaP_2$ was studied by using the self-consistent full-potential linear muffin-tin orbital method. The lattice parameters of un-doped $Al_xGa_{1-x}P$ (x = 0.25, 0.5, and 0.75) were optimized. The band-structure and the density of states of Mn-doped $AlGaP_2$ with or without the vacancy were investigated in detail. The P-3p states at the Fermi level dominate rather than the other states. Thus a strong interaction between the Mn-3d and P-3p states is formed. The ferromagnetic ordering of dopant Mn with high magnetic moment is induced due to the (Mn-3d)-(P-3p)-(Mn-3d) hybridization, which is attributed by the partially filled P-3p bands. The holes are mediated with keeping their 3d-characters, therefore the ferromagnetic state is stabilized by this double-exchange mechanism.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.585-588
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• 1998

We investigated the ultra-low energy B, P, and As ion implantation using ungraded MDRANGE code to form nanometer junction depths. Even at the ultra-low energies that were simulated in paper, it was found that channeling cases must be carefully considered. In the cases of B, channeling occurred above 500 eV, in the cases of P, channeling occurred above 1 keV, and in the cases of As, channeling occurred above 2 keV. Comparing 2D dopant profiles of 1 keV B, 2 keV P, and 5 keV As with tilts, we demonstrated that most channeling cases occurred not lateral directions but depth directions. Through thus results, even below 5 keV energy ion implant considered here, it is estimated that channeling effects are important in the formation of nanometer junction depths.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.133-136
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• 1992

Electrical resistivity and piezoelectric properties were investigated in Lead Zirconate-Titante(PZT) with Nb$_2$O$\sub$5/dopant, fabricated from conventional mixed-oxide powders and molten salt synthesis. The resistivity and electromechanical coupling factor(K$\sub$p/) were increased with increasing Nb content. The reason for increasing of the electrical resistivity below the Curie Temperature(TC). It is believed that the Curie Temperature(Tc). It is believed that the p-type electrical conduction in PZT is due to lead vacancies. The electromechanical coupling factor(K$\sub$p/) and piezoelectric constant d$\sub$33/ were improved. This behavior can be explained as a compensation effect and Nb$\^$5+/ can serve as a donar and contribute electrons to the conduction process. As a result, the optimized Nb$_2$O$\sub$5/ dopants on the PZT specimens were 0.75 wt%.

• 한국표면공학회지
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• 제26권3호
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• pp.127-134
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• 1993

P+ and BF2+ were implanted to LPCVD amorphous silicon films deposited on thermally-oxidized silicon wafers and the low temperature annealing process followed with various conditions to activate implanted ions and to recrystallize the films. We tried to find the optimum processing condition by comparing the recrystallization behaviors and the electrical properties. TEM analysis showed that the final grain size of BF2+-implanted films was similar to that of unimplanted films, whereas the grains of P+-implanted films. For both P+ - and BF2+ -implanted films, sheet resistances were decreased with elevating annealing temperature and the minimum value was about 110~120$\Omega$/$\square$ at $600^{\circ}C$.

• Nuclear Engineering and Technology
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• 제8권1호
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• pp.29-40
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• 1976

시리콘 태양전지의 한쪽 면내에서 광에 의해서 발생된 전하운반체의 수집을 하는데 있어서 부가적인 도움을 줄 수 있는 정전적인 부등전계 효과에 고나한 연구가 수행되었다. 주석(tin) 주입에서 오는 격자변형의 보상효과로 말미암아 P형 측내에 보론농도의 구배를 가져오므로서 부동전계를 발생시킬 수 있었다. 태양전지내에 p-n 접합을 gtud성시키기 위하여 주로 방사증식확산의 원리에 근거를 둔 새로운 이온주입법이 채택되었다. 이온주입으로 된 태양전지의 회로개방전압과 변환효율을 각각 0.44V 및 5%였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1830-1832
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• 1999

고에너지 이온주입(1)에 기인한 격자 손상 발생 및 열처리에 따라 이들의 회복이 어느정도 가능한지에 대하여 측정 및 분석방법을 통하여 조사하였다. 그리고 본 실험에서는 이온주입시 형성되는 빈자리 결함(Vacancy defect)과 격자간 결함(interstitial defect)의 재결할(recombination)을 이용 점결합(point defect)를 감소 시킬 수 있는 effective RTA조건을 설정하여 well 특성을 개선하고자 하였다. 8inch p-type Si(100)기판에 pad oxide 100A을 형성한 후 NMOS 형성하기 위해 vtn${\sim}$p-well과 PMOS 형성을 위해 vtp$\sim$n-well을 이온주입 하였다. Mev damage anneal은 RTA(2)(Rapid Thermal Anneal)로 $1000\sim1150C$ 온도에서 $15\sim60$초간 spilt 하여 실험후 suprem-4 simulation data를 이용하여 실제 SIMS측정 분석결과를 비교하였으며 이온주입에 의해 발생된 격자손상이 열처리후 damage 정도를 알아보기 위해 T.W(Therma-Wave)을 이용하였으며 열처리후 면저항값은 4-point probe를 사용하였다. 이온주입후 열처리 전,후에 따른 불순물 분포를 SIMS(Secondary ion Mass Spectrometry)를 이용하여 살펴보았다. SIMS 결과로는 열처리 온도 및 시간의 증가에 따라서 dopant확산 및 활성화는 큰차이는 보이지 않고 오히려 감소하는 경향을 볼 수 있으며 또한 접합깊이와 농도가 약간 낮아지는 것을 볼 수 있었다. 결점(defect)을 감소시키기 위해서 diffusivity가 빠른 임계온도영역($1150^{\circ}C$-60sec)에서 RTA를 실시하여 dopant확산을 억제하고 점결점(point defect)의 재결합(recombination)을 이용하여 전위 (dislocation)밀도를 감소시켜 이온주입 Damage 및 면저항을 감소 시켰다. 이와 같은 특성을 process simulation(3)(silvaco)을 통하여 비교검토 하였다.

• 한국결정성장학회지
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• 제9권1호
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• pp.39-42
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• 1999

N-도핑된 3C-SiC (N-SiC(3C))을 화학기상증착(CVD)으로 $1250^{\circ}C$에서 Si(111) 기판 위에 tetramethylsilane(TMS)를 열분해하여 성장하였다. 수송가스는 $H_{2}$이었고, N-SiC(3C) 에피층은 CVD로 성장되는 동안 $NH_{3}$에 의하여 n-형으로 도핑되었다. N-SiC(3C)의 물리적 특성은 적외선 분광(FTIR), X-선 회절(XRD), 라만 스펙트럼(Raman spectrum), 단면 투과전자영상(XTEM), Hall 측정 및 p/n 다이오드의 전압-진압(I-V) 특성에 의하여 조사되었다. N-도핑된 SiC(3C) 에피층의 전도형은 n-형이었고, 전도형은 $NH_{3}$를 사용한 N-dopant에 의하여 저온에서 잘 조절될 수 있다.