• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.30-33
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• 2004

Shallow p+-n junctions were formed by low-energy ion implantation and dual-step annealing processes The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth. A new simulator is designed to model boron diffusion in silicon, which is especially useful for analyzing the annealing process subsequent to ion implantation. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using a resonable parameter values, the simulator covers not only the equilibrium diffusion conditions but also the nonequilibrium post-implantation diffusion. Using initial conditions and boundary conditions, coupled diffusion equation is solved successfully. The simulator reproduced experimental data successfully.

• Bulletin of the Korean Chemical Society
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• 제30권4호
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• pp.863-868
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• 2009

New spiro[fluorene-7,9′-benzofluorene]-based blue host material, 5-phenyl-spiro[fluorene-7,9′-benzofluorene] (BH-1P), was successfully prepared by reacting 5-bromo-spiro[fluorene-7,9′-benzofluorene] (1) with phenyl boronic acid through the Suzuki reaction. 5-(N,N-Diphenyl)amino-spiro[fluorene-7,9′-benzofluorene] (BH-1DPA) and diphenyl-[4-(2-[1,1;4,1]terphenyl-4-yl-vinyl)-phenyl]amine (BD-1) were used as dopant materials. 2,5-Bis-(2',2"- bipyridin-6-yl)-1,1-diphenyl-3,4-diphenylsilacyclopentadiene (ET4) and Alq3 were used as electron transfer materials. Their UV absorption, photoluminescence and thermal properties were examined. The blue OLEDs with the configuration of ITO/DNTPD/$\alpha$-NPD/BH-1P:5% dopant/$Alq_3$ or ET4/LiF-Al prepared from the BH-1P host and BH-1DPA and BD-1 dopants showed a blue EL spectrum at 452 nm at 10 V and a luminance of 923.9 cd/$m^2$ with an efficiency of 1.27 lm/W at a current density of 72.57 mA/$cm^2$.

• 공업화학
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• 제33권6호
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• pp.588-593
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• 2022

MgO 입자 표면에 첨가된 P₂O₅의 가수분해, 발수성, 그리고 절연 거동에 미치는 영향을 조사하였다. MgO 표면에 첨가된 P₂O₅는 가수분해반응 억제와 발수성을 동시에 나타내기 때문에 독특한 절연거동을 나타내었다. 따라서 절연거동은 MgO의 표면수화반응에 의한 Mg(OH)₂와 OH^-전하 전달비와 친수성에 반비례하였다. 시효에 따른 MgO의 절연성은 표면수화반응, 첨가된 도펀트 종의 밴드갭, 그리고 도펀트의 친수성과 소수성에 강한 영향성과 의존성을 나타내었다. 마지막으로 친수성인 MgO의 표면수화반응을 억제하는 전기절연성을 발현하여 열전달매체 응용분야에서 큰 잠재력을 제공하는 것으로 나타났다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 추계 학술발표강연 및 논문개요집
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• pp.66-66
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• 2001

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.209-209
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• 2009

Fabrication of p-type ZnO has already proven difficult and usually inconsistent despite numerous worldwide efforts. Many research groups studied electrical and optical properties P, Li, As, N single doped ZnO thin film. In P-doped ZnO thin film, the reproducibility of p-type conduction with $P_2O_5$ as a dopant source was shown to be relatively poor. In this study, we made P single doped and Li & P co-doped ZnO target. To investigate electrical and optical properties of P single doped and Li & P co-doped ZnO thin film using $P_2O_5$ and $Li_3PO_4$ dopant source respectively was deposited by PLD. The growth temperature was changed 500, $700^{\circ}C$ and various oxygen partial pressure and post-annealing conditions was changed temperature, different gas ambient($O_2,N_2$). We investigate that how to change electrical and optical properties as function of growth temperature, oxygen partial pressure and post-annealing(RTA).

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1573-1576
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• 2007

ABCV-Py, a new red fluorescent material, in which two identical electron donor (dimethylamino group) and acceptor (cyano group) moieties are linked to two independent biphenyl groups which share the same core phenyl, has been synthesized for use in OLED application. Performance of red doped electroluminescent devices using ABCV-Py as dopant were measured with various host materials, $Alq_3$, CBP, DPVBi, and p-terphenyl. The performance of device with DPVBi host material was better than those with other host materials and high doping concentration could be applied on device with ABCV-Py as dopant.

• 전자공학회논문지A
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• 제28A권11호
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• pp.887-893
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• 1991

To take advantage of Ti-polycide, when it is contacted with both n+ and p+ active area of silicon, the effects of BF$_2$ on the formation of Ti-silicide were investigated with RTA temperature and dopant concentration. The intermediate phase C49 TiSi$_2$ appeared at $650^{\circ}C$ and the stable phase C54 TiSi2 was formed at $700^{\circ}C$. And the formation of Ti-silicide was hindered by BF$_2$ doping and this trend was decreased with increasing temperature. The out-diffusion phenomena of BF$_2$ into Ti silicide were not observed. And significantly, the native oxide was a chief factor preventing the formation of Ti-silicides.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.667-670
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• 2003

Ni-silicide has low thermal stabiliy. This point is obstacle to apply NiSi to devices. So In this paper, we have studied for obtain thermal stability and analysis of dopant dependency of NiSi. And then we applied Ni-silicide to devices. To improvement of thermal stability, we deposit Ni70/Co10/Ni30/TiN100 to sample. Co midlayer is enhanced thermal stability of NiSi. Co/Ni/TiN, this structure show very difference between n-poly and p-poly in sheet resistance. But Ni/Co/Ni/TiN, structure show less difference. Also junction leakage is good.

• 대한전자공학회논문지SD
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• 제40권11호
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• pp.1-8
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• 2003

본 논문에서는 소스/드레인 및 게이트의 불순물에 따른 실리사이드의 의존성을 면저항과 단면 특성 등의 분석을 통하여 연구하였다. 급속 열처리 후에는 As, P, BF₂, B/sub 11/ 등과 같은 불순물에 대한 먼저항의 차이가 거의 나지 않았다. 하지만 실리사이드 형성 후히 고온 열처리시에 그 특성이 매우 크게 변화하였다. BF₂를 주입한 시편에서의 특성이 가장 좋게 나타난 반면, As를 주입한 실리사이드의 특성이 가장 열화되었다. BF₂를 주입한 시편에서의 실리사이드 특성 향상은 flourine에 의한 니켈의 확산 방지 때문인 것으로 여겨진다. 그러므로 실리사이드의 성능 향상을 위해 Ni의 확산을 방지시키는 것이 매우 필요하다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.435-438
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• 2007

$V_{2}O_{5}$ was tested as a p-dopant for lower operating voltage and higher stability of OLEDs. Low voltage and high stability were achieved using this doping layer. It can be separated to bulk and interface contributions and the latter is a more dominant factor both of operation voltage and stability.