• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.540-542
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• 2009

Phosphorus doped ZnO (PZO) thin films were deposited on $SiO_2$/n-Si substrates using DC magnetron sputtering system varying oxygen partial pressures from 0 to 40 % under Ar atmosphere. The deposited films showed reduced n-type conductivity due to the compensating donor effects by phosphorus dopant. The bias-time stability shows relatively good stability over bias and time comparing to un-doped ZnO-based TFTs.

• Solar Energy
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• v.7 no.1
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• pp.35-41
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• 1987

This paper presents a comprehensive computer simulation of hydrogenated amorphous p-i-n silicon solar cells. The physical mechanism governing solar cell operation has been modeled and solved numerically by Runge-Kutta-Gill method. Effects of gap state density, dopant impurity, diffusion length and interface recombination velocity on solar cell performance are investigated. Numerical results show that the electric field in i-region is not uniform but depends strongly on voltage and position. A rather poor fill factor may be due to the electric field variation and short diffusion length. It is found out that the life time should be improved in order to increase a fill factor and a conversion efficiency.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.90-94
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• 1995

Defects introduced by Si, Ge preamorphization and their effects on the dopant diffusion and electrical characteristics. Good crystalline quality are obtained after the annealing of Ge ion double implanted samples. The defect clusters under the a/c interface are expected to extend up to the deep in the Si ion implanted samples. The dislocation loops near the junction absorb the interstitial Si atoms resolving from the defect cluster and result in the prevention of enhanced boron diffusion near the tail region of boron profile and show good reverse current charactristics.

• Textile Coloration and Finishing
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• v.28 no.2
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• pp.92-100
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• 2016

To chemically prepare polypyrrole(pPy) coated fabrics(silk, cotton and nylon fabrics), the fabrics were first soaked in 0.4M oxidant $FeCl_3$/0.06M dopant anthraquinone-2-sulfonic acid solution for 5min at room temperature, and subsequently soaked in a 0.4M monomer pyrrole aqueous solution for 5min at room temperature. The content(wt%) of coated pPy in the coated fabrics was controlled by the number of treatments(these two steps). This study examined the effect of the number of treatments/pPy content on the sheet resistance, mechanical/bending properties and color behaviors of pPy coated fabrics. The coated pPy content, sheet resistance(${\Omega}$/square) and color strength(K/S) of pPy coated fabrics increased sharply with increasing number of treatments up to 20 times, while the increase slowed down afterward. The tensile strength, elongation at break and lightness($L^*$) decreased with increasing number of treatments. The tensile modulus and bending rigidity of coated fabrics increased significantly with increasing number of treatments/coated pPy content. This indicated that the flexibility of coated fabrics decreased considerably.

• Proceedings of the KAIS Fall Conference
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• 2002.05a
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• pp.151-154
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• 2002

반도체 소자의 기판 재료로 사용되고 있는 실리콘 웨이퍼는 그 정밀도가 매우 중요하다. 본 연구에서는 균일한 Dopant 농도 분포를 얻을 수 있는 중성자 변환 Doping을 이용하여 실리콘에 인(P)을 Doping하는 연구를 수행하였다. 중성자 변환 Doping, 즉 NTD(Neutron Transmutation Doping)란 원자번호 30인 실리콘 동위원소에 중성자가 조사되면 원자번호 31인 실리콘으로 변환되고, 2.6시간의 반감기를 갖고 decay 되면서 인(P)으로 변하게 되어 실리콘 웨이퍼에 n-type 전도를 갖게 하는 것을 말한다. 본 연구에서는 하나로 원자로를 이용하여 고저항(1000-2000Ωcm) FZ 실리콘 웨이퍼 에 두 개의 조사공에서 중성자 조사하여 저항의 변화를 관찰하였고, 중성자 조사시 발생하는 점결함을 분석하여 점결함이 저항 변화에 미치는 영향을 알아보았다. 중성자 조사 전 이론적 계산에 의해 HTS조사공은 5Ωcm, 20.1Ωcm 이고 IP3조사공은 5Ωcm, 26.5Ωcm, 32.5Ωcm 이었고, 중성자 조사 후 SRP로 측정한 결과 실제 저항값은 HTS-1 2.10Ωcm, HTS-2 7.21Ωcm 이었고, IP-1은 1.79Ωcm, IP-2는 6.83Ωcm, 마지막으로 IP-3는 9.23Ωcm 이었다. DLTS 측정 결과 IP조사공에서 새로운 피의 결을 발견할 수 있었다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.104-113
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• 1994

We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.504-507
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• 2002

We investigated electro-optic and ionic properties of twisted nematic cells by using control of chiral pitch. These properties are observed in practical experiment and simulations. C-V and V-T curve characteristics were obtained from three types of cells with d/p. It is shown that d/p ratio of short cells exhibit faster response time improved by 20% than normal cell. Also, inter-gray response time is improved each rise time and decay time. And, the increase of saturation voltage is happened because of the small twist angel change from initial state at high voltage near 5V. To compensate for longer black level tail, gamma curve index was varied from g = 2.2 to g = 2.7 in module status. Additionally, adding chiral dopant into TN cells improved ionic characteristics such as increasing VHR, Ion density and DC Hysteresis were decreased..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.55-56
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• 2005

The properties of phosphorus doped ZnO thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated depending on various deposition conditions. The phosphorus (P) doped ZnO target was composed of ZnO + x wt% Al (x=1, 3, 5). The structural, electrical and optical properties of the ZnO thin films were measured by X-ray diffraction (XRD), Hall measurements and photoluminescence (PL). As the deposition temperature optimized, the electrical properties of the phosphorus doped ZnO (ZnO:P) layer showed a electron concentration of $7.76\times10^{16}/cm^3$, a mobility of 10.225 $cm^2/Vs$, a resistivity of 7.932 $\Omega$cm. It was observed the electrical property of the film was changed by dopant activation effect as target variations and deposition conditions.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.248-259
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• 2014

Acceptor-doped cerium pyrophosphates have shown significant proton conductivity of > $10^{-2}Scm^{-1}$ in the range of $100-300^{\circ}C$ and are considered promising candidates for use as electrolytes in proton-conducting, ceramic electrolyte fuel cells (PCFCs). But, cerium pyrophosphates themselves do not have structural protons, and protons incorporate into their material bulk only as impurities on exposure to a hydrogen-containing atmosphere. However, proton incorporation and proton conduction in these materials are expected to be affected by factors such as the nature (ionic size and charge) and concentration of the aliovalent dopant, processing history (synthesis route and microstructure), and the presence of residual phosphorous phosphate ($P_mO_n$) phases. An exact understanding of these aspects has not yet been achieved, leading to large differences in the magnitude of proton conductivity of cerium pyrophosphates reported in various studies. Herein, we systematically address some of these aspects, and present an overview of factors affecting proton conductivity inacceptor-doped $CeP_2O_7$.